• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Advances in materials Research
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• v.5 no.3
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• pp.131-140
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• 2016

Copper/silicon nitride ($Cu/Si_3N_4$) composites are fabricated by powder technology process. Copper is used as metal matrix and very fine $Si_3N_4$ particles (less than 1 micron) as reinforcement material. The investigated powder were used to prepare homogenous ($Cu/Si_3N_4$) composite mixtures with different $Si_3N_4$ weight percentage (2, 4, 6, 8 and10). The produced mixtures were cold pressed and sintered at different temperatures (850, 950, 1000, $1050^{\circ}C$). The microstructure and the chemical composition of the produced $Cu/Si_3N_4$ composites were investigated by (SEM) and XRD. It was observed that the $Si_3N_4$ particles were homogeneously distributed in the Cu matrix. The density, electrical conductivity and coefficient of thermal expansion of the produced $Cu/Si_3N_4$ composites were measured. The relative green density, sintered density, electrical conductivity as well as coefficient of thermal expansion were decreased by increasing the reinforcement phase ($Si_3N_4$) content in the copper matrix. It is also founded that the sintered density and electrical conductivity of the $Cu/Si_3N_4$ composites were increased by increase the sintering temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.210.1-210.1
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• 2014

The hexagonal boron nitride (h-BN) sheet, a 2D material like graphene sheet, is comprised of boron and nitrogen atoms. Similar to graphene, h-BN sheet has attractive mechanical properties while it has a wide band gap unlike graphene. Recently, many experimental groups studied the growth of single BN layer by chemical vapor deposition (CVD) method on the copper substrate. To study the initial stage of h-BN growth on the copper surface, we have performed density functional theory calculations. We investigate several adsorption sites of a boron or nitride atom on the Cu surfaces. Then, by increasing the number of adsorbed B and N atoms, we study formation behaviors of the BN flakes on the surface. Several types of BN flakes atoms such as triangular, linear, and hexagonal shapes are considered on the copper surface. We find that the formation of the BN flake in triangular shape is most favorable on the surface. On the basis of the theoretical results, we discuss the growth mechanism of h-BN layer on the copper surfaces in terms of its shapes in the initial stage of growth.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.227-232
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• 2004

We investigated a nonvolatile nanomemory element based on boron nitride nanopeapods using molecular dynamics simulations. The studied system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the studied system can be considered to be a nonvolatile memory device. The minimum potential energies of the memory element were found near the fullerenes attached copper electrodes and the activation energy barrier was $3{\cdot}579 eV$. Several switching processes were investigated for external force fields using molecular dynamics simulations. The bit flips were achieved from the external force field of above $3.579 eV/{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.158-161
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• 2003

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.379-385
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• 2017

In this study, an amperometric non-enzymatic glucose sensor was developed on the surface of a glassy carbon electrode by simply drop-casting the synthesized homogeneous suspension of hexagonal boron nitride (h-BN) nanosheets with a copper metal-organic framework (Cu-MOF) composite. Comprehensive analytical methods, including field-emission scanning electron microscopy (FE-SEM), Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), cyclic voltammetry, electrochemical impedance spectroscopy, and amperometry, were used to investigate the surface and electrochemical characteristics of the h-BN-Cu-MOF composite. The FE-SEM, FT-IR, and XRD results showed that the h-BN-Cu-MOF composite was formed successfully and exhibited a good porous structure. The electrochemical results showed a sensor sensitivity of $18.1{\mu}A{\mu}M^{-1}cm^{-2}$ with a dynamic linearity range of $10-900{\mu}M$ glucose and a detection limit of $5.5{\mu}M$ glucose with a rapid turnaround time (less than 2 min). Additionally, the developed sensor exhibited satisfactory anti-interference ability against dopamine, ascorbic acid, uric acid, urea, and nitrate, and thus, can be applied to the design and development of non-enzymatic glucose sensors.

• Korean Chemical Engineering Research
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• v.58 no.1
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• pp.64-68
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• 2020

In this study, metal copper clad laminate can be prepared using epoxy composite filled with thermally conductive fillers. In order to improve the thermal conductivity of epoxy composites, it is important factor to form conductive networks through appropriate packing of conductive fillers in epoxy composite matrix and to decrease the amount of thermally resistant junctions involving a epoxy composite matrix layer between adjacent filler units. This is because epoxy has a thermal conductivity of only 0.2-0.3W, so in order to maintain high thermal conductivity, thermally conductive fillers are connected to each other, so that the gap between particles can be reduced to reduce thermal resistance. The purpose of this study is to find way to achieve highly thermally conductive in the epoxy composite matrix filled with Al₂O₃ and Boron Nitride(BN) filler by filler loading and uniform dispersion. As a results, the use of Al₂O₃/BN hybrid filler in epoxy matrix was found to be effective in increasing thermal conductivity of epoxy composite matrix due to the enhanced connectivity offered by more continuous thermally conductive pathways and uniform dispersion without interfacial voids in epoxy composite matrix. In addition, surface treatmented s-BN improves the filler dispersion and adhesion between the filler and the epoxy matrix, which can significantly decrease the interfacial thermal resistance and increase the thermal conductivity of epoxy composite matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.590-590
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• 2013

Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.318-326
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• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.