• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.215-221
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• 2022

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm²). Conclusively, the highest photocurrent was obtained with Cu₂O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu₂O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.138.2-138.2
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• 2013

Copper oxide is a multi-functional material being used in various research areas including catalysis, electrochemical materials, oxidizing agents etc. Among these areas, we have synthesized and utilized graphene based copper oxide nanocomposites (CuOx/Graphene) for the catalytic applications (C-N cross coupling reaction). Briefly, Cu precursors were anchored on the graphite oxide(GO) sheets being exfoliated and oxidized from graphite powder. Two different crystalline structures of Cu2O and CuO on graphene and GO were prepared by annealing them in Ar and O2 environments, respectively. The morphological and electronic structures were systemically investigated using FT-IR, XRD, XPS, XAFS, and TEM. Here, we demonstrate that the catalytic performance was found to depend on oxidative states and morphological structures of CuOx graphene nanocomposites. The relationship between the structure of copper oxides and catalytic efficiency toward C-N cross coupling reaction will be discussed.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.448-452
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• 2001

An Experimental study was carried out to develop a simple method of processing copper waste sludge which is produced by PBC manufacturing. The procedure is based on leaching of wet sludge in 2N H$_2$SO$_4$, and the solid / liquid ratio is controlled approximately at 1/10. The recovery of copper is 85.4%, and pH of the leachate is 3.20. Adding ammonia solution into leachate forms ammine, and hydroxide compounds derived from other impurities in leachate at pH 10. The hydroxide compound can be treated by ferrite process, and the product is a stable oxide compound. Then the ammine solution is heated to evaporate ammonia, and the copper hydroxide is formed. Heating at 8$0^{\circ}C$by aeration, copper hydroxide is transformed into copper oxide with a purity of 98.4%. This process can recover most copper from sludge and the residue can be stabilized by the formation of a stable oxide compound which is not hazardous to environment.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.195-199
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• 2011

The effect of copper oxide on migration and interaction of protons in barium zirconate was investigated using density functional theory. One copper atom was substituted for a zirconium atom site, and a proton was added to a $3{\times}3{\times}3$ barium zirconate superstructure. An energy barrier of 0.89 eV for proton migration was the highest among several energy barriers. To investigate the interaction between multiple protons and a copper atom, two protons were added to the superstructure. Various proton positions were determined by the interaction between the two protons and the copper atom.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• The Korean Journal of Pesticide Science
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• v.7 no.2
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• pp.149-154
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• 2003

Potato blackleg disease caused by Erwinia carotovora subsp. atroseptica has been a serious problem in Korea. It was previously reported that four mixtures [streptomycin (9.3 ppm) + copper oxide (171.6 ppm)/copper hydroxide (146.3 ppm), streptomycin sulfate (7.0 ppm)+copper oxide (171.6ppm)/copper hydroxide (146.3 ppm)] were effective for the control of E. carotovora subsp. atroseptica. in in vitro test. Using those four mixtures and two antibiotics [streptomycin (81.4 ppm) and streptomycin sulfate (61.3 ppm)], the effectiveness of control for E. carotovora subsp. atroseptica. was conducted in the field. Two antibiotics showed over 60% of control efficacy under different soil conditions, while mixtures of two antibiotics with copper compounds did not show any control effects on the infected seed potato. Two mixtures [streptomycin (27.9 ppm)+copper hydroxide (438.9 ppm), streptomycin sulfate (21.0 ppm) + copper oxide (514.8 ppm)] were effective in the control of potato blackleg disease on the infected potato plants under different climate conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.5
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• pp.243-248
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• 2017

In this study copper glaze samples were prepared with varying amount of tin oxide, and the chromatic characteristics of glazes were explained on the results of spectrophotometric, crystalline phase, and microstructural analyses. The red color of copper glaze was dissipated with the addition of tin oxide and turned into achromatic color due to the decrease of CIEab values. Tin oxide homogeneously distributed in the glaze layer interfered with the red color generation coming from the growth of Cu nuclei, and formed an alloy with metal copper around bubbles. This resulted in the decrease of metal copper peak intensity with minor $Cu_2O$ peak. With the 3.79 % tin oxide addition the glaze was appeared as gray due to the black color CuO and Cassiterite $SnO_2$ phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.5
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• pp.591-598
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• 2018

The reaction characteristics of aluminum-copper(II) oxide composites initiated by the electrostatic discharge were studied as changing the aluminum particle size. Three different sizes of aluminum particles with nano-size copper(II)-oxide particle were used in the study. These composites were manufactured by two methods i.e. a shock-gel method and a self-assembly method. The larger aluminum particle size was, the less sensitive and less violent these composites were based on the electrostatic test. On the analysis of high speed camera about ignition appearances and burning time, the burning speed was faster when aluminum particle size was smaller.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.