• Title/Summary/Keyword: Copper Film

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Effects of Surfactant and Preplate Process on Electroless Copper Plating on Carbon Nano-fiber (탄소나노섬유 표면 구리 무전해 도금에 미치는 분산제와 도금 전처리의 영향)

  • Han, Jun-Hyun;Seok, Hyun-Kwang;Lee, Sang-Soo;Jee, Kwang-Koo
    • Journal of Powder Materials
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    • v.16 no.2
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    • pp.131-137
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    • 2009
  • This paper deals with the effects of the surfactant and preplate process (sensitization and activation) on electroless copper plating on carbon nano-fiber (CNF). Ultrasonic irradiation was applied both during dispersion of CNF and during electroless plating containing preplate process. The dispersion of CNF and flatness of the plated copper film were discussed based on the changes in surfactant concentration and preplate process time. It was clearly shown that high concentration of surfactant and long time of preplate process could promote the agglomeration of CNF and uneven copper plating on CNF.

A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization (구리 CMP 적용을 위한 산성 콜로이드 실리카를 포함한 준무연마제 슬러리 연구)

  • 김남훈;김상용;서용진;김태형;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.272-277
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    • 2004
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

Electro-oxidation of Cyclohexanol on a Copper Electrode Modified by Copper-dimethylglyoxime Complex Formed by Electrochemical Synthesis

  • Hasanzadeh, Mohammad.;Shadjou, Nasrin.;Saghatforoush, Lotfali.;Khalilzadeh, Balal.;Kazeman, Isa.
    • Bulletin of the Korean Chemical Society
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    • v.30 no.12
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    • pp.2943-2948
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    • 2009
  • Copper-dimethylglyoxime complex (CuDMG) modified Copper electrode (Cu/CuDMG) showed a catalytic activity towards cyclohexanol oxidation in NaOH solution. The modified electrode prepared by the dimethylglyoxime anodic deposition on Cu electrode in the solution contained 0.20 M $NH_4Cl\;+\;NH_4OH\;(pH\;9.50)\;and\;1\;{\times}\;10^{-4}$ M dimethylglyoxime. The modified electrode conditioned by potential recycling in a potential range of -900${\sim}$900 mV vs. Ag/AgCl by cyclic voltammetry in alkaline medium (1 M NaOH). The results show that the CuDMG film on the electrode behaves as an efficient catalyst for the electro-oxidation of cyclohexanol in alkaline medium via Cu (III) species formed on the electrode.

Photocurrent Multiplication Process in OLEDs Due to a Crystalline of Hole Injection Layer of Copper(II)-phthalocyanine and a Light Irradiation (유기발광소자내 정공주입층 Copper(II)-phthalocyanine의 결정 및 광원에 따른 Photocurrent 증폭 연구)

  • 임은주;박미화;윤순일;이기진;차덕준;김진태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.622-626
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    • 2003
  • We report the electrical properties of organic light emitting diodes (OLEDs) depending on the crystal structure of hole injection layer of copper(II)-phthalocyanine(CuPc) and the light irradiation the carrier mobility of copper(II)-phthalocyanine(CuPc) of light source. OLEDs were constructed with indium tin oxide(ITO)/CuPc/triphenyl-diamin(TPD)/tris-(8-hydroxyquinoline)aluminum(Alq$_3$)/Al.Photocurrent multiplication of OLEDs was varied by the heat-treatment condition of CuPc thin film and the light irradiation.

Study on Surface Morphology and Transmittance of Copper Oxide Thin Films Prepared by an Oxidation Reaction (산화반응으로 형성된 구리산화물 박막의 표면형상 및 투과율 특성에 관한 연구)

  • Lee, Eun Kyu;Park, Daesoo;Yoon, Hoi Jin;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.10
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    • pp.651-655
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    • 2017
  • This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

APPLICATION OF COLD SPRAY COATING TECHNIQUE TO AN UNDERGROUND DISPOSAL COPPER CANISTER AND ITS CORROSION PROPERTIES

  • Lee, Min-Soo;Choi, Heui-Joo;Choi, Jong-Won;Kim, Hyung-Jun
    • Nuclear Engineering and Technology
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    • v.43 no.6
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    • pp.557-566
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    • 2011
  • A cold spray coating (CSC) of copper was studied for its application to a high-level radioactive waste (HLW) disposal canister. Several copper coatings of 10 mm thick were fabricated using two kinds of copper powders with different oxygen contents, and SS 304 and nodular cast iron were used as their base metal substrates. The fabricated CSC coppers showed a high tensile strength but were brittle in comparison with conventional non-coating copper, hereinafter defined to as "commercial copper". The corrosion behavior of CSC coppers was evaluated by comparison with commercial coppers, such as extruded and forged coppers. The polarization test results showed that the corrosion potential of the CSC coppers was closely related to its purity; low-purity (i.e., high oxygen content) copper exhibited a lower corrosion potential, and high-purity copper exhibited a relatively high corrosion potential. The corrosion rate converted from the measured corrosion current was not, however, dependent on its purity: CSC copper showed a little higher rate than that of commercial copper. Immersion tests in aqueous HCl solution showed that CSC coppers were more susceptible to corrosion, i.e., they had a higher corrosion rate. However, the difference was not significant between commercial copper and high-purity CSC copper. The decrease of corrosion was observed in a humid air test presumably due to the formation of a protective passive film. In conclusion, the results of this study indicate that CSC application of copper could be a useful option for fabricating a copper HLW disposal canister.

Characteristics of Copper Vanadium Oxide$(Cu_{0.5}V_2O_5)$ Cathode for Thin Film Microbattery (구리-바나듐 산화물 박막의 양극 특성 및 전 고상 전지의 제작)

  • Lim Y. C.;Nam S. C.;Park H. Y.;Yoon Y. S.;Cho W. I.;CHo B. W.;Chun H. S.;Yun K. S.
    • Journal of the Korean Electrochemical Society
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    • v.3 no.4
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    • pp.219-223
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    • 2000
  • All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.