A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization
![]() |
김남훈
(중앙대학교 전자전기공학부)
김상용 ((주)동부아남반도체) 서용진 (대불대학교 전기전자공학과) 김태형 (여주대학 전기시스템디자인과) 장의구 (중앙대학교 전자전기공학부) |
1 |
Studies of adhesion of metal particles to silica particles based on zeta potential measurements
/
DOI ScienceOn |
2 |
Chemical Mechanical Polishing (CMP) 공정을 이용한 Mutilevel Metal 구조의 광역 평탄화에 관한 연구
/
과학기술학회마을 |
3 |
Roles of phosphoric acid in slurry for Cu and TaN CMP
/
과학기술학회마을 |
4 |
/
|
5 |
Uni-polar þ eld charging of particles: effects of particle conductivity and rotation
/
DOI ScienceOn |
6 |
Effect of organic acids in copper chemical mechanical planarization slury on slurry stability and particle contamination on copper surfaces
/
DOI |
7 |
Removal of TaN/Ta barrier with variable selectivity to copper and TEOS
/
|
8 |
The role of the quantum dispersion in the coulomb correction of Bose-Einstein correltions
/
DOI ScienceOn |
9 |
H₃PO₄addition to slurry for Cu and TaN CMP
/
DOI ScienceOn |
10 |
Development and application of an abrasive-free polishing solution for copper
/
DOI |
11 |
Copper-based metallization for ULSI application
/
|
12 |
Copper interconnection integration and reliability
/
DOI ScienceOn |
13 |
A study on the corrosion effects by addition of complexing agent in the copper CMP process
/
과학기술학회마을 |
![]() |