• Title/Summary/Keyword: Copper Electroplating

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Fabrication of Copper Electrode Array and Test of Electrochemical Discharge Machining for Micro Machining of Glass (유리의 미세 가공을 위한 구리 전극군의 제작과 전기 화학 방전 가공 시험)

  • 정주명;심우영;정옥찬;양상식
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.9
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    • pp.488-493
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    • 2004
  • In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining(ECDM) for glass machining. An array of 72 Cu electrodes is used to machine Borofloat33 glass. The height and diameter of a Cu electrode are 400 $\mu\textrm{m}$ and 100 $\mu\textrm{m}$ respectively. It is fabricated by ICP-RIE, Au-Au thermo-compression bonding, and copper electroplating. Borofloat33 glass is machined by the fabricated copper electrode array in 60 seconds at 55 V. The surface roughness of the machined glass is measured and the machined glass is anodically bonded with silicon.

Magnetic Properties of Thin Cu/Co Multilayers Made by Electrodeposition

  • Lee, Jung-Ju;Lee, Jin-Han;Hong, Kim-In
    • Journal of Magnetics
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    • v.10 no.3
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    • pp.118-121
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    • 2005
  • We have investigated the magnetic properties of electroplated thin Cu/Co multilayers by using electrolytes made of copper sulphate and cobalt sulphate and by applying alternating plating voltage. While the multilayers plated with pure electrolyte showed superparamagnetism, those plated with organic additives showed ferromagnetic behavior. These changes are attributed to the so-called 'self-annealing' effect and reduction of grain size caused by the organic additives.

Fabrication of Laminated Multi-layer Flexible Substrate with Cu/Sn Via (Cu/Sn 비아를 적용한 일괄적층 방법에 의한 다층연성기판의 제조)

  • Lee H. J.;Yu Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.1-5
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    • 2004
  • A multi-layer flexible substrate is composed of copper(Cu)/polyimide that are known as good electrical conductivity, and low dielectric constant, respectively. In this study. conductor line of $5{\mu}m$-pitch was successfully fabricated without non-uniform pattern shape by electroplating copper and coating polyimide on patterned stainless steel. For multi-layer flexible substrate, via holes were drilled by UV laser and filled with electroplating copper and tin. And then, the PI layer with vias and conductor lines was stripped from stainless steel substrate. The PI layers were laminated at once with careful alignment between layers. Solid state reaction between tin and copper during lamination formed the intermetallic compounds of $Cu_6Sn_5$($\eta$-phase) and $Cu_3Sn$($\epsilon$-Phase) and achieved a complete inter-connection by vertically positioning the plugged via holes on via pad. The via formation process has several advantages; such as better electrical property and lower cost than V type via and paste via.

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Effects of Post-deposition Annealing on the Copper Films Electrodeposited on the ECR Plasma Cleaned Copper Seed Layer (ECR plasma로 전처리된 Cu seed층 위에 전해도금 된 Cu 막에 대한 Annealing의 효과)

  • Lee, Han-seung;Kwon, Duk-ryel;Park, Hyun-ah;Lee, Chong-mu
    • Korean Journal of Materials Research
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    • v.13 no.3
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    • pp.174-179
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    • 2003
  • Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.

Effects of Chloride Ion on Accelerator and Inhibitor during the Electrolytic Cu Via-Filling Plating (전해 Cu Via-Filling 도금에서 염소이온이 가속제와 억제제에 미치는 영향)

  • Yu, Hyun-Chul;Cho, Jin-Ki
    • Journal of the Korean institute of surface engineering
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    • v.46 no.4
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    • pp.158-161
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    • 2013
  • Recently, the weight reduction and miniaturization of the electronics have placed great emphasis. The miniaturization of PCB (Printed Circuit Board) as main component among the electronic components has also become progressed. The use of acid copper plating process for Via-Filling effectively forms interlayer connection in build-up PCBs with high-density interconnections. However, in the case of copper-via filled in a bath, which is greatly dependent on the effects of additives. This paper discusses effects of Cl ion on the filling of PCB vias with electrodeposited copper based on both electrochemical experiment and practical observation of cross sections of vias.

Interface between the Electroplated Copper-cobalt Thin Films and the Substrate

  • Kim, Jin-Gyu;Lee, Jung-ju;Bae, Jong-hak;Bang, Won-bae;Hong, Kim-in;Yoon, C. H.;Son, Derac;Jeong, Kee-ju
    • Journal of Magnetics
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    • v.11 no.3
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    • pp.119-122
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    • 2006
  • We electroplated copper-cobalt thin films on a silicon substrate, which had 150 nm thick copper seed layer. The adhesion between the two metallic layers could be increased by utilizing a proper organic additive, pulse plating technique, and high temperature annealing. The thin films exhibited columnar growth of the deposits and enhanced adhesion. This is attributed to the grain growth mechanism introduced by the additive and annealing.

Electrolytic recovery of metals from the plating rinse water with fluidized bed electrode reactor (유동층전극 반응기를 이용한 폐수내의 중금속 회수)

  • Lee, Jea-Keun;Chun, Hai-Soo
    • Journal of the Korean institute of surface engineering
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    • v.17 no.1
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    • pp.1-6
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    • 1984
  • The fluidized bed electrode reactor(FBER) with conducting particles has been made use of the removal of metals from dilute electroplating rinse water. The electrolysis was carried out under the conditions of diaphragm current density with 2~28A/$dm^2$ and bed expansion with 20~50%. Recirculating batch operations have been shown that the metal concentration dropped exponentially and may be taken down to 10 ppm. And then, the current efficiency at a concentration of 10 ppm copper was 37% under the conditions of 30% bed expansion and 6 A/$dm^2$, and at concentrated electrolyte (2000ppm copper) was over 80% in the range of 8~28A/$dm^2$ and 20~50% bed expansion. One of the technical possibilities of fluidized bed electrolysis is the separation of copper and nickel from a mixed solution of copper and nickel.

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Thermal Degradation of Black Cobalt Solar Selective Coatings (흑색 코발트 태양 선택흡수막의 열퇴화)

  • Lee, Kil-Dong
    • Journal of the Korean Solar Energy Society
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    • v.35 no.4
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    • pp.9-15
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    • 2015
  • Black cobalt solar selective coatings were prepared by using an electroplating method. The changes in the optical properties of the black cobalt selective coating due to thermal degradation were analyzed by using the Auger electron spectroscopy (AES) and spectrophotometer. The black cobalt selective coating was prepared on a copper substrate by using a synthesized electrolyte with $CoCl_2$ and KSCN at a current density of ${\sim}0.5A/dm^2$ for 45s ~ 60s. Its optical properties were a solar absorptance (${\alpha}$) of the order of 0.80 ~ 0.84 and a thermal emittance (${\epsilon}$) of 0.01. From the AES depth profile analysis of heated sample, thermal degradation of the black cobalt selective coating heated for 33 hours at temperature of $350^{\circ}C$ occurred primarily due to interdiffusion at interface of cobalt and copper substrate. This results were predictable that the ${\alpha}$ decreases due to the thermal oxidation and diffusion.

Method of Solving Oxidation Problem in Copper Pillar Bump Packaging Technology of High Density IC (고집적 소자용 구리기둥범프 패키징에서 산화문제를 해결하기 위한 방법에 대한 연구)

  • Jung, One-Chul;Hong, Sang-Jeen;Soh, Dae-Wha;Hwang, Jae-Ryong;Cho, Il-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.919-923
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    • 2010
  • Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have $100{\mu}m$ pitch were introduced with fabrication process using a KM -1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with $330^{\circ}C$ and 500 N thenno-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

Electrodeposition of Copper on AZ91 Mg Alloy in Cyanide Solution

  • Nguyen, Van Phuong;Park, Min-Sik;Yim, Chang Dong;You, Bong Sun;Moon, Sungmo
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.238-244
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    • 2016
  • Copper electrodeposition on AZ91 Mg alloy was studied in views of preferential deposition on ${\alpha}$- or ${\beta}$- phases and how to achieve uniform deposition over the entire surface on ${\alpha}$- and ${\beta}$-phases in a cyanide solution. The inhomogeneous microstructure of AZ91 Mg alloy, particularly ${\alpha}$- and ${\beta}$-phases, was found to result in non-uniform deposition of zincate layer, preferential deposition of zincate on ${\beta}$-phases, which leads to non-uniform growth of copper layer during the following electrodeposition process. The preferential depositions of zincate can be attributed to higher cathodic polarizations on the ${\beta}$-phases. Pin-hole defects in the copper electrodeposit were observed at the center of large size ${\beta}$-phase particles which is ascribed to gas bubbles formed at the ${\beta}$-phases. The activation of AZ91 Mg alloy in hydrofluoric acid solution was used to obtain uniform growth of zincate layer on both the ${\alpha}$- and ${\beta}$-phases. By choosing an optimum activation time, a uniform zincate layer was obtained on the AZ91 Mg alloy surface and thereby uniform growth of copper was obtained in a cyanide copper electroplating solution.