• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.12
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• pp.1371-1379
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• 2010

This paper presents an analysis of impulse dispersion for impulse radio ultra-wide band(IR-UWB) antenna. A set of antenna structure configurations are highlighted with verification based on the STFT(Short Time Fourier Transform) in 3.1~5.1 GHz: first, a taper-slotted antenna allowing the optimal impulse transmission, and second, 4 types of the omni-directional IR-UWB antenna using different feed structures(microstrip line, and CPW(Coplanar Waveguide)). The proposed STFT allows the analysis of the IR-UWB antenna's dispersion characteristic.

• Journal of Magnetics
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• v.10 no.4
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.15-20
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• 2004

This paper proposed a very simple method of extracting an effective permittivity from the data of scattering parameters measured on the transmission line of coplanar waveguides in the frequency range of microwave or millimeter waves. This is an extracting method of an effective permittivity $\varepsilon$$_{eff}$ in the case of $\beta$$\ell$ =n$\pi$ (n=integer), where the value of S$_{11}$ changes abruptly following the operating frequency. The experimental value of the effective permittivity $\varepsilon$$_{eff}$ on a dielectric substrate of Rogers 4003$^{TM}$ material of $\varepsilon$$_{r}$ =3.38 showed the value of 2.042, which differs in the error of -3.4% to 8% from those calculated from the previously reported formulae. This result showed that the measurement method was very simple, as well as applied directly to the fabricated circuit patterns, even though the circuit patterns might be complicated or on the substrate of different dielectric materials.s.als.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1086-1098
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• 2005

Two types of small wideband antennas are proposed for UWB application. One type is small biconical structure fed by coaxial probe, which is easy to be installed on the circuit board. The other type is of planar bow-tie type fed by coplanar transmission line. Generally, the bandwidth of the latter type is significantly narrower than that of the former type. It is shown, however that the bandwidth of the latter type can be made to be comparable to that of the former, if some series inductive component is introduced in the center conductor line in the CPW transmission line by replacing some part of center line with narrower line of higher characteristic impedance. The series inductance component play an important role of neutralizing the capacitive component of the small bow-tie antenna, thereby making broadband impedance matching possible. The small planar bow-tie antenna was fabricated and experimented. The experimental results for return loss are observed to be in good agreement with simulated results. The radiation pattern is also investigated experimentally.

• Journal of Navigation and Port Research
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• v.46 no.3
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• pp.179-190
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• 2022

In this study, we investigated the characteristic impedance and bandwidth of CPW3DCS (coplanar waveguide employing periodic 3D coupling structures), and examined its potential for the development of a marine radio communication FISoC (fully-integrated system on chip) semiconductor device. To extract bandwidth and characteristic impedance of the CPW3DC, we induced a measurement-based equation reflecting measured insertion loss, and compared the measured results of the propagation constant β and characteristic impedance with the measured ones. According to the results of the comparison, the calculated results show a good agreement with the measured ones. Concretely, the propagation constant β and characteristic impedance exhibited an maximum error of 3.9% and 6.4%, respectively. According to the results of this study, in a range of LT = 30 ~ 150 ㎛ for the length of periodic structures, the CPW3DC exhibited a passband characteristic of 121 GHz, and a very small dependency of characteristic impedance on frequency. We could realize a low impedance transmission line with a characteristic impedance lower than 20 Ω by using CPW3DCS with a line width of 20 ㎛, which was highly reduced, compared with a 3mm line width of conventional transmission line with the same impedance. The characteristic impedance was easily adjusted by changing LT. The above results indicate that the CPW3DC can be usefully used for the development of a wireless communication FISoC (fully-integrated system on chip) semiconductor device. This is the first report of a study on the bandwidth of the CPW3DC.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.209-215
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• 2001

In this paper a method for analysis and modelling of coplanar transmission interconnect lines that are placed on top of silicon-silicon oxide substrates is presented. The potential function is expressed by series expansions in terms of solutions of the Laplace equation for each homogeneous region of layered structure. The expansion coefficients of different series are related to each other and to potentials applied to the conductors via boundary conditions. In the plane of conductors, boundary conditions are satisfied at $N_d$ discrete points with $N_d$ being equal to the number of terms in the series expansions. The resulting system of inhomogeneous linear equations is solved by matrix inversion. No iterations are required. A discussion of the calculated line admittance parameters as functions of width of conductors, thickness of the layers, and frequency is given. The interconnect capacitance and conductance per unit length results are given and compared with those obtained using full wave solutions, and good agreement have been obtained in all the cases treated

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1972-1975
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• 2002

In this paper, we have proposed low temperature co-fired ceramic (LTCC) based packaging for RF MEMS devices. The packaging structure is designed and evaluated with 3D full field simulation. 50 ${\Omega}$ matched coplanar waveguide(CPW) transmission line is employed as the test vehicle to evaluate the performances of the proposed package structure. The line is encapsulated with the LTCC packaging lid and connected to the via feed line. To reduce the insertion loss due to the packaging lid, the cavity with via post is formed in the packaging lid. The performances of the package structure is simulated with the different cavity depth and via-to-via length. Simulation results show that the proposed package structure has reflection loss better than 20 dB and insertion loss lower than 0.1 dB from DC to 30 GHz with the cavity depth and via-to-via length of 300 ${\mu}m$ and 350 ${\mu}m$, respectively. To realize the designed package structure, the cavity patterning is tested using the sandblast of LTCC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.69-74
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• 2010

A new package substrate for dynamic random access memory(DRAM) devices has been developed using selective aluminum anodization. Unlike the conventional substrate structure commonly made by laminating epoxy-based core and copper clad, this substrate consists of bottom aluminum, middle anodic aluminum oxide and top copper. Anodization process on the aluminum substrate provides thick aluminum oxide used as a dielectric layer in the package substrate. Placing copper traces on the anodic aluminum oxide layer, the resulting two-layer metal structure is completed in the package substrate. Selective anodization process makes it possible to construct a fully filled via structure. Also, putting vias directly in the bonding pads and the ball pads in the substrate design, via in pad structure is applied in this work. These arrangement of via in pad and two-layer metal structure make routing easier and thus provide more design flexibility. In a substrate design, all signal lines are routed based on the transmission line scheme of finite-width coplanar waveguide or microstrip with a characteristic impedance of about $50{\Omega}$ for better signal transmission. The property and performance of anodic alumina based package substrate such as layer structure, design method, fabrication process and measurement characteristics are investigated in detail.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.43-49
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• 2010

Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.