• Current Photovoltaic Research
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• v.9 no.4
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• pp.128-132
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• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• Journal of Welding and Joining
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• v.32 no.6
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• pp.35-40
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• 2014

The contact tip for gas metal arc welding has important functions to transmit the welding current to the wire and to guide the wire to molten pool. If the contact tip is damaged, it is a cause of lowering the welding productivity due to removal of welding defects and replacement of contact tip. In case of the use of a contact tip for a long time the arc is unstable because the processed hole in the contact tip center is larger, and the variation of aiming position of the welding wire causes a seam tracking error. In this study, gas metal arc welding experiments using contact tip of three different materials were performed. The contact tips with Cu-P, Cu-Cr, and Cu-ODS were used at the experiments, and the welding characteristics by each contact tip were evaluated. After welding contact tip appearance, welding spatter adhesion amount of the nozzle, and weld bead appearance were evaluated. The welding current and welding voltage were measured to verify arc stability during arc welding.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.134-137
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• 2005

In this paper, a continuous contact treatment has been considered during FE-analysis of the sheet metal forming processes. Because the simulation is usually performed stepwise, the status of contact can change suddenly. In case of implicit scheme, the increment of punch stroke can be chosen as large value. For exact assessment of contact force and friction force between die and sheet, the continuous contact treatment is proposed. The virtual surface of sheet metal is modeled by NURBS curves or surfaces in order to calculate exact contact area and penetration depth. From the geometrical evaluation of contact behavior, additional contact pressure is imposed to the element. The deformation of bending process and hydroforming process are analyzed based on this scheme.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Proceedings of the KSR Conference
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• 2004.10a
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• pp.692-697
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• 2004

Damage often occurs on the surface of railway wheel by wheel-rail contact fatigue. It should be removed before reaching wheel failure, because wheel failure can cause derailment with loss of life and property. The increase or decrease of the contact fatigue life by the metal removal of the contact surface were shown by many researchers, but it has not explained precisely why fatigue life increases or decreases. In this study, the effect of metal removal depth on the contact fatigue life for railway wheel has been evaluated by applying finite element analysis. It has been revealed that the residual stress and the plastic flow are the main factors determining the fatigue life. Finally, the contact fatigue life according to metal removal has been estimated.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.55-61
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• 2017

Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.318.2-318.2
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• 2014

The high contact resistance is still one of the major issues to be resolved in CdS/CdTe thin film solar cells. CdTe/Metal Schottky contact induced a high contact resistance in CdS/CdTe solar cells. It has been reported that the work function of CdTe thin film is more than 5.7 eV. There has not been a suitable back contact metal, because CdTe thin film has a high work function. In a few decades, some buffer layer was reported to improve a back contact problem. Buffer layers which are Te, $Sb_2Te_3$, $Cu_2Te$, ZnTe:Cu and so on was inserted between CdTe and metal electrode. A formed buffer layers made a tunnel junction. Hole carriers which was excited in CdTe film by light absorption was transported from CdTe to back metal electrode. In this report, we reported the variation of solar cell performance with different buffer layer at the back contact of CdTe thin film solar cell.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.117-120
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• 2019

Graphene is recognized as a promising material for silicon photonics, since it has a wide optical-window that entirely covers the optical communication wavelength region ($1.3{\sim}1.6-{\mu}m$) and extremely high-carrier mobility that makes it possible to fabricate the high-speed photodetectors. However, the maximum absorbance of monolayer graphene is only 2.3%, which limits the photoresponse characteristics of graphene photodetectors. As a result, a low photoresponsivity of graphene photodetector is a critical issue limiting the use of graphene photodetectors in the optical communications field. In this paper, we investigated effects of optically-modulated metal-graphene contact on the photoresponsivity of graphene photodetectors. The optical modulation of the contact resistance mainly determined the photoresponse characteristics of graphene photodetectors. The Ni-contact graphene photodetector which has a characteristic of the significant optical modulation of metal-graphene contact showed a higher photoresponsivity than the Pd-contact device. This work will provide a way to improve the photoresponse characteristics of graphene-based photodetector and contribute to the development of high-speed/high-responsivity graphene photodetector.

• Transactions of Materials Processing
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• v.8 no.3
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• pp.306-312
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• 1999

In the recent sheet metal forming simulations, it increases to adopt the dynamic explicit method for an effective computation and the elastoplastic formulation for stress recovery. It is inevitable in the dynamic explicit method that some noises occur, which sometimes partly spoil results of simulations. This phenomenon becomes severer when complicate contact conditions are included in simulations. In commercial dynamic codes, the concept of contact damping is introduced. However, the formulation process of it is not revealed well. In this paper, a contact damping method is formulated in order for effectively suppressing noises occurring due to complicated contact conditions. This is checked by analyzing a simple sheet metal stamping process (U-draw bending). From the computational results, it is shown that the contact damping can effectively control the noises due to contacts, especially when considering the sheet thickness, and help to develop more reliable internal stress states, which result in more realistic shapes after springbank.