• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.236-237
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• 2005

To measure surface roughness and smoothness of semiconducting materials in power cable, we have investigated the formation and growth process of carbon black showed by changing the content of carbon black. The specimens were primarily kneaded in material samples of pellet form for 5 minutes on rollers ranging between 70[$^{\circ}C$] and 100[$^{\circ}C$]. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm]. The contents of conductive carbon black were the variable, and their contents were 20, 30 and 40[wt%], respectively. The surface roughness and smoothness of specimens were measured by SEM and AFM. From SEM experimental result, carbon black in specimens formed matrix as a particles. Also we showed growth process of carbon black according to an increment of the content of carbon black. From AFM experimental result, surface roughness of specimens decreased according to an increment of the content of carbon black.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.2
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• pp.246-251
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• 2012

Pulse electrochemical polishing process has been used to improve mechanical properties such as surface roughness and corrosion resistance on conductive metallic materials. In addition, pulse electrochemical polishing process with various frequency may produce a lustrous, smoother, deburred and cleaned surface on workpiece. The aim of this paper is to study surface characteristics of pulse electrochemical polishing for various frequency conditions using AFM to verify localized surface variation in nanometer scale.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.271-274
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• 2010

We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.382.2-382.2
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• 2014

We explain a method to fabricate multi-layered transparent conductive films (TCF) using graphene oxide (GO), copper powder and polyurethane (PU) solution. The flexible graphene nanosheets (GNSs) serve as nanoscale connection between conductive copper nanoparticles (CuNps) and PU nanofibers, resulting in a highly flexible TCF. To fabricate conductive films with high transmittance, polyurethane (PU) nanofibers were used for a conductive network consisting of CuNps and GNSs (CuNps-GNSs). In this experiment, copper powder and graphene oxides were mixed in deionized water with the ultrasonication for 2 h. NaBH4 solution is used as a reduction agents of CuNps and GNSs (CuNps-GNSs) under a nitrogen atmosphere in the oil bath at 100% for 24 h to mixed. The purified and dispersed CuNp-GNS were obtained in deionized water, and diluted to a 10wt.% based on the contents of GNSs. Polyurethane (PU) nanofibers on a PET substrate were formed by electrospinning method. PET slides coated with the PU nanofibers were immersed into CuNp-GNS solution for several second, rinsed briefly in deionized water, and dried to obtain self-assembled CuNp-GNS/PU films. The morphology of the multi-layered films were characterized with a field emission scanning electron microscope (FE-SEM, Hitachi S-4700) and atomic force microscope (AFM, PSIA XE-100). The electrical property was analysed by the I-V measurement system and the optical property was measured by the UV/VIS spectroscopy.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.395-400
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• 2011

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.1-4
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• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.81-84
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• 2003

Conductive polyaniline(PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3V, whereas that of ITO/P3HT/LiF/Al device shows 5V.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.296-296
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• 2016

ITO films doped with a small amount of high-permittivity materials not only retain the basic properties of ITO films but also improve some of their properties. We report the highly conductive and transparent (ITO:Zr) films with various substrate (RT to 300oC) temperatures on glass substrate for the HIT solar cell applications. We observed a decrease in sheet resistance from 36 to $11.8{\Omega}/{\Box}$ with the increasing substrate temperature from RT to 300oC, respectively. The ITO:Zr films showed also lowest resistivity of $1.38{\times}10-4{\Omega}.cm$ and high mobility of 42.37cm-3, respectively. The surface and grain boundaries are improved with the increase of substrate temperature as shown by SEM and AFM surface morphologies. The highly conductive and transparent ITO:Zr films were employed as front electrode in HIT solar cell and the best performance of device was found to be Voc = 710 mV, Jsc = 33.70 mA/cm2, FF = 0.742, ${\eta}=17.76%$ at the substrate temperature of $200^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.