Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.08a
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- Pages.81-84
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- 2003
Red emission organic light-emitting diode with electrochemically deposited PANI-CSA layer
- Kim, Ju-Seung ;
- Kim, Dae-Jung ;
- Gu, Hal-Bon (Electrical Eng., Chonnam National University)
- Published : 2003.08.22
Abstract
Conductive polyaniline(PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3V, whereas that of ITO/P3HT/LiF/Al device shows 5V.