• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.921-926
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• 1997

SOI(Silicon On lnsulator) technology is many advantages in the gabrication of MOS(Metal-Oxide Semiconductor) and CMOS(Complementary MOS) structures. These include high speed, lower dynamic power consumption,greater packing density, increased radiation tolearence et al. In smiple form of bonded SOL wafer manufacturing, creation of a bonded SOI structure involves oxidizing at least one of the mirror polished silicon surfaces, cleaning the oxidized surface and the surface of the layer to which it will be bonded,bringing the two cleanded surfaces together in close physical proximity, allowing the subsequent room temperature bonding to proceed to completion, and than following this room temperature joining with some form of heat treatment step,and device wafer is thinned to the target thickness. This paper has been performed to investigate the possibility of the bonded SOI wafer manufacturing Especially, we focused on the bonding quality and thinning method. Finally,we achieved the bonded SOI wafer that Si layer thickness is below 3 .mu. m and average roughness is below 5.angs.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.341-344
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• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.79.1-79.1
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• 2012

Si 기판을 무전해 식각하여 나노와이어 형태로 합성하는 방법은 쉽고 간단하기 때문에 이를 이용한 소자 특성 연구가 많이 진행되고 있다. 하지만 이러한 방법으로 제작된 Si 나노와이어의 경우 식각에 의하여 나노와이어 표면이 매우 거칠어지기 때문에 고유의 특성을 나타내기 어려워 표면 특성을 제어 할 수 있는 연구의 필요성이 대두되고 있다. 본 연구에서는 무전해 식각법을 이용하여 p와 n형 나노와이어를 각각 합성하고 그 특성을 구현하기 위하여 표면조절을 진행하였다. 특히 n형 나노와이어의 경우 표면의 OH- 이온으로 인하여 n채널 특성이 제대로 나타나지 않기 때문에 열처리를 이용하여 표면을 보다 평평한 형태로 조절하여 향상된 전기적 특성을 얻을 수 있었다. 여기에 나노와이어와 절연막 사이의 계면 결함을 최소화 하기 위하여 poly-4-vinylphenol (PVP) 고분자 절연막에 나노와이어를 삽입시켜 나노와이어의 문턱전압 값을 조절하였다. 이를 바탕으로 complementary metal-oxide semiconductor(CMOS) 구조의 인버터 소자를 제작하였으며 p형 나노와이어가 절연막에 삽입된 정도에 따라 인버터의 midpoint voltage 값을 조절 할 수 있었다.

• Transactions of the Society of Information Storage Systems
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• v.5 no.2
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• pp.89-95
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• 2009

We setup the system to measure the noise characteristics of the 5M complementary metal-oxide semiconductor (CMOS) image sensor by generic measurement indicator of Standard mobile imaging architecture (SMIA) which is one of internal standard of mobile imaging architecture. To evaluate the effect of environment and setting parameters, such as temperature and integration time, we measure the variation of the dark signal, dynamic range and fixed pattern noise of image sensor. We also detect the number of defective pixels and cluster defects defined as adjacent single defect pixels at 5M CMOS image sensor. Then, we find the existence of some cluster defects in experiment, which are not expected in calculation.

• ETRI Journal
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• v.29 no.1
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• pp.59-69
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• 2007

We designed and fabricated a vision chip for edge detection with a $160{\times}120$ pixel array by using 0.35 ${\mu}m$ standard complementary metal-oxide-semiconductor (CMOS) technology. The designed vision chip is based on a retinal structure with a resistive network to improve the speed of operation. To improve the quality of final edge images, we applied a saturating resistive circuit to the resistive network. The light-adaptation mechanism of the edge detection circuit was quantitatively analyzed using a simple model of the saturating resistive element. To verify improvement, we compared the simulation results of the proposed circuit to the results of previous circuits.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.225.1-225.1
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• 2012

본 논문에서는 다양한 정보 획득을 목적으로 설계되는 카메라의 핵심 부품인 영상센서의 종류별 동작 특성에 대해 분석하였다. 카메라의 영상센서는 기본적으로 카메라 광학계 설계에 영향을 받으며, 운용의 편이성, 획득 영상의 품질 및 사용되는 환경에 따라 적당한 영상센서가 선택되어 사용된다. 용도에 따라 탑재체에 할당된 무게 및 크기가 제한되므로, 적당한 광학계의 크기와 목표 영상 획득을 위해 센서의 화소면 크기가 결정된다. 가시광선 영역에서는 CCD(Charge Coupled Device), CMOS(complementary metal-oxide semiconductor) 및 NMOS 등의 종류별 영상센서가 사용될 수 있으며, 충분한 광량 확보를 위해서는 넓은 크기의 화소를 보유한 센서가 필요하지만, 이 경우 광학계의 크기와 무게가 증가하여 한정된 자원이 허락된 탑재체 설계에 부담이 된다. 제어단 설계시 빛의 수광 능력이 좋은 CCD 영상 센서를 사용할 경우 좀 더 복잡하고 비교적 높은 소비전력이 요구되는 전자부가 설계되며, 상대적으로 간단한 제어단이 요구되는 CMOS 센서의 경우, 빛의 수광 능력이 CCD에 비해 떨어진다는 단점이 있다. 이 논문에서는 두 가지 영상 센서의 특성 분석을 통해 영상 시스템 설계시 영상 센서 선택에 필요한 고려 사항에 대해 분석하였고, 효율적인 영상 시스템 설계 방안에 대해 서술하였다.

• International journal of advanced smart convergence
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• v.10 no.3
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• pp.81-88
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• 2021

This paper proposes two types of subharmonic RF receiver front-end (called LMV) where, in a single stage, quadrature voltage-controlled oscillator (QVCO) is stacked on top of a low noise amplifier. Since the QVCO itself plays the role of the single-balanced subharmonic mixer with the dc current reuse technique by stacking, the proposed topology can remove the RF mixer component in the RF front-end and thus reduce the chip size and the power consumption. Another advantage of the proposed topologies is that many challenges of the direct conversion receiver can be easily evaded with the subharmonic mixing in the QVCO itself. The intermediate frequency signal can be directly extracted at the center taps of the two inductors of the QVCO. Using a 65 nm complementary metal oxide semiconductor (CMOS) technology, the proposed subharmonic RF front-ends are designed. Oscillating at around 2.4 GHz band, the proposed subharmonic LMVs are compared in terms of phase noise, voltage conversion gain and double sideband noise figure. The subharmonic LMVs consume about 330 ㎼ dc power from a 1-V supply.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.359-363
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• 2015

This paper proposes an algorithm that reduces the conversion time of a single-slope A/D converter (SSADC) that has n-bit resolution, which typically is limited by conversion time taking up to $2^n$ clock cycles for an operation. To improve this situation, we have researched a novel hybrid-type A/D converter that consists of a pseudo-pipeline A/D converter and a conventional SSADC. The pseudo-pipeline A/D converter, using a single-stage of analog components, determines the most significant bits (MSBs) or upper bits and the conventional SSADC determines the remaining bits. Therefore, the modified SSADC, similar to the hybrid-type A/D converter, is able to significantly reduce the conversion time because the pseudo-pipeline A/D converter, which determines the MSBs (or upper bits), does not rely on a clock. The proposed A/D converter was designed using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) technology process; additionally, its characteristics were simulated.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.256-261
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• 2013

This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the $0.35-{\mu}m$ 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.