• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.181-185
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• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.73-77
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• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.618-622
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• 2004

Excitation spectra of the 1.6 rm emission originating from $Ho^{3＋}$：$^{5}$ I$_{5}$ \longrightarrow$^{5}$ I$_{7}$ transition in fluoride, sulfide, and selenide glasses were measured at wavelengths around 900nm where the fluorescing $^{5}$ I$_{5}$ level is located. In specific energy range where the frequency upconversion populating $^{5}$ F$_{1}$ state happens, the excitation efficiency of the 1.6 fm emission was deteriorated in fluoride and sulfide hosts. In selenide however spectral line shapes of the excitation spectrum and the '$^{5}$ I$_{8}$ \longrightarrow$^{5}$ I$_{5}$ absorption spectrum looked seemingly identical to each other. Differences in optical nonlinearity as well as electronic band gap energy of the host glasses used are responsible for the experimental observations. On the other hand, codoping of rare earths such as Tb$^{3+}$, Dy$^{3+}$, Eu$^{3+}$, and Nd$^{3+}$ was effective in decreasint the terminating $^{5}$ I$_{7}$ level lifetime. However, at the same time, some of the codopants increased unnecessary absorption at the 1.6 $\mu$m wavelengths via their ground state absorption. Though the lifetime quenching effect of Eu$^{3+}$ was moderate, it exhibited no additional extrinsic absorption at the 1.6 $\mu$m band.EX>m band.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.94-101
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• 2023

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.