• Journal of Magnetics
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• v.18 no.4
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• pp.428-431
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• 2013

We demonstrate that a partial loading of $Ni_{0.5}Zn_{0.5}Fe_2O_4$ (Ni-Zn ferrite) film remarkably improves impedance matching of electrically small $Ba_3Co_2Fe_{24}O_{41}$ ($Co_2Z$) hexaferrite antenna. A 3 ${\mu}m$ thick Ni-Zn ferrite film was deposited on a silicon wafer by the electrophoresis deposition process and post-annealed at $400^{\circ}C$. The fabricated Ni-Zn ferrite film has saturation magnetization of $268emu/cm^3$ and coercivity of 89 Oe. A partial loading of the Ni-Zn ferrite film on the $Co_2Z$ hexaferrite helical antenna increases antenna return loss to 24.7 dB from 9.0 dB of the $Co_2Z$ antenna. Experimental results show that impedance matching and maximum input power transmission to the antenna without additional matching elements can be realized, while keeping almost the same size as the $Co_2Z$ antenna size.

• Journal of Magnetics
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• v.10 no.4
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• pp.163-170
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• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.963-968
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• 2000

Magnetic properties and microstructures of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were investigated as a function of addition of element Ag, (X$\_$Ag/=0 to 6 at.%) and annealing temperature, T$\_$a/=300$\^{C}$ to 600$\^{C}$. In the case of adding Ag, magnetic properties of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were improved than those of Ag-free Fe$\_$93/Zr$_3$B$_4$thin films. The prominent soft magnetic properties with coercivity of 1.1 Oe, saturation magnetization of 2.2 T and permeability of 5400 at 50㎒ were obtained from Fe$\_$88/Zr$_3$B$_4$Ag$\_$5/ thin film annealed was lower than that of Fe-base or Co-base thin films reported previously. Such enhanced magnetic properties are presumably attributed to the format in ultra fine grains. Also, the reduced eddy current loss in the annealed sample is due to refined micro magnetic domains with increasing the amount of Ag in Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.42-50
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• 2006

Co-Fe-Al-O nano-granular thin films with high electrical resistivity, fabricated by radio frequency magnetron sputtering under an $Ar+O_2$ atmosphere, are found to show good soft magnetic properties in the GHz frequency range. The real part value of the relative permeability is 260 at low frequencies and this value is maintained up to the GHz frequency range. A non-integrated type noise filter on a coplanar waveguide transmission line is demonstrated by using the Co-Fe-Al-O nano-granular thin film with the dimensions of $4\;mm(l){\times}4\;mm(w){\times}0.1\;{\mu}m(t)$. The insertion loss is very low being less than 0.3 dB and this low value is maintained up to 2 GHz. At a ferromagnetic resonance frequency of 3.3 GHz, the degree of noise suppression is measured to be 3 dB. This level of noise attenuation is small for real applications, but there is much room for further improvement by increasing the magnetic volume and integrating the magnetic thin film into the CPW transmission line.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.389-393
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• 2000

Effects of Co addition and heat treatment on the magnetic properties of Fe-Si-B thin films were investigated. The compositions of metalloids, i.e, B and Si, in the alloys were kept 10 at.% each. Heat treatments were carried out in the temperature range from 100 to $300^{\circ}C$ for up to 60 min. Amorphous thin films of FeCoSiB were deposited on the water-cooled substrates by dc magnetron sputtering. The composition of thin films was controlled by placing proper number of pellets of alloying elements and analyzed by ICP, resulting in $Fe_{80-X}Co_ XB_{10}Si_{10}$ (X=8~18 at.%). Saturation magnetization of the alloys increased as Co concentration increased up to 10 at.% and then decreased with further increase of Co concentration. However, coercive force of the films decreased with the increase of Co concentration. Furthermore, the coercive force was also reduced by the annealing due to the residual stress relief.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.240.1-240.1
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• 2008

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.912-918
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• 2002

Ni-Mn-Co-Fe oxide thick films were coated on an alumina substrate by screening printing technique. The microstructure and electrical properties of the thick films, as a function of composition and sintering temperature, were investigated. The components of the NTC thick films sintered at 1150${\circ}C$ were distributed homogeneously. On the other hand, in the case of the NTC thick films sintered at 1200 and 1250${\circ}C$, Co element was distributed homogeneously, but Ni, Mn and Fe elements were distributed heterogeneously, resulting in the formation of Ni rich and Mn-Fe rich regions. All the thick film NTC thermistors prepared showed a linear relationship between log resistance (log R) and the reciprocal of absolute temperature (1/T), indicative of NTC characteristics. At a given NiO and $Mn_3O_4$ content, the resistance, B constant and activation energy of $(Ni_{1.0}Mn_{1.0}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) and $(Ni_{0.75}Mn_{1.25}Co_{1-x}Fe_x)O_4$ (0.25${\le}$x${\le}$0.75) thermistors increased with increasing $Fe_2O_3$ content.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.177-182
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• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.

• Journal of Magnetics
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• v.12 no.1
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• pp.21-26
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• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.