• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.144-144
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• 1999

최근 국내 반도체 기술의 비약적인 발전으로 전자 기기 전반에 소형화, 고주파화, 고기능화 등이 진행되는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기 신호를 변조.증폭시키는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기신호를 변조.증폭시키는 인덕터, 트랜스 포머와 같은 수동 자기 소자는 아직도 3차원 벌크 형태로 사용되고 있다. 일본을 중심으로 각국에서는 자기 소자의 박막.소형화에 대한 다각도의 연구가 진행되었으나 국내서는 아직 미미한 실정이다. 따라서 고집적 전원 공급 장치나 지능 센서 등에 반도체와 자기 소자의 사용 주파수 대역과 크기가 통합된 반도체-자성체 IC(semiconductor-magnetic integrated circuit)의 필요성이 절실히 요구되고 있다. 현재 사용중인 벌크형 인덕터나, 트랜스 포머의 경우 10NHz이상의 고주파 대역에는 응용되지 못하고 있다. 이는 적용된 자성체가 페라이트(ferrite)로서 초투자율은 크지만 고주파대역에서의 공진 현상에 의해 저투자율을 나타내고, 포화 자속밀도가 낮기 때문이다. 이러한 페라이트 자성체의 대체품으로 주목받고 있는 것이 Fe, Co계 고비저항 자성마이다. 그러나 Co는 낮은 포화자속밀도를 나타내기 때문에 이러한 조건을 충족시키는 자성막으로 Fe계 미세 결정막을 사용하였다. 본 연구에서는 선택적 전기 도금법(selective electroplating method)과 LIGA like process를 이용하여 공시형 인덕터(air core inductor)의 라이브러리(library)를 구축한 뒤, 고주파 대역에서의 우수한 연자기 특성을 가지는 Ti/FeTaN막을 적용한 자기 박막 인덕터(magnetic thin film inductor)를 제작하여 비교.분석하였다. 제조된 인덕터의 특성 추정은 impedence analyzer를 이용하여 주파수에 따른 저항(resistance), 인덕턴스(inductance)를 측정, 계산한 성능지수(quality factor)로서 인덕터의 성능을 평가하였다. 제조된 박막 인덕터의 코일 형상은 5턴의 double rectangular spiral 구조였으며, 적용된 자성막의 유효 투자율9effective permeability)은 1500, 자성막, 절연막 그리고 코일의 두께는 각각 2$\mu\textrm{m}$, 1$\mu\textrm{m}$, 20$\mu\textrm{m}$이며 코일의 폭은 100$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.601-607
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• 2016

Piezoelectric thick films of soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material (S55) were fabricated using a conventional tape casting method. Ag-Pd electrodes were printed on the piezoelectric film at room temperature and all 5 layered films with a dimension of $12mm{\times}16mm$ were successfully laminated for a multi-layered piezoelectric ceramic actuator. The laminated specimens were co-fired at $1,100^{\circ}C$ for 1 h. A flat layered and dense microstructure was obtained for the $112{\mu}m$ thick piezoelectric actuator after sintering process. Thereafter, a prototype piezoelectric speaker was fabricated using the multi-layered piezoelectric ceramic actuator which can operate as a bimorph. Its SPL (sound pressure level) characteristic was also evaluated for speaker application. Frequency response revealed that the output SPL with a root mean square voltage of 10 V increased gradually to the highest peak of 87.5 dB for 1.5 kHz and exhibited a relatively stable behavior over the measured frequency range (${\leq}20kHz$) at a distance of 10 cm, implying that the fabricated piezoelectric speaker is potential for speaker applications.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.1
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• pp.1-10
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• 2020

This study deals with the fabrication and thermal characterization of planar heating elements attached to the backside of the reflector used in the electrodeless lamp of a freezer. We tried to solve the problem of the local heat generation of the linear heating element that occurs about 50℃. The homogeneous dispersion and manufacturing excellence of the planar heating element produced were confirmed through SEM and EDS. In addition, the test specimens was prepared according to the change in the ratio of carbon fiber to the basis weight of the planar heating element, and a sample having a basis weight of 50g/㎡ having a content ratio of carbon fiber of 70% was selected. That sample showed low surface resistance of 4.3Ω/sq and high temperature of about 81℃ at 6V. Durability was confirmed by performing repeated bending evaluation of 3000 cycles for the sample. Large area test specimens were prepared to be applied to the actual reflector, insulated by EVA film and analyzed for their thermal characteristics. From 13V application, the temperature of the linear heating element was higher than 50℃ and the average temperature of 68℃ was maximum at 18V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.592-595
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• 2008

This paper presents development of automatic image quality register optimization system using mobile TFT-LCD (Thin Film Transistor-Liquid Crystal Display) driver IC and embedded software. It optimizes automatically gamma adjustment and voltage setting registers in mobile TFT-LCD driver IC to improve gamma correction error, adjusting time, flicker noise and contrast ratio. Developed algorithms and embedded software are generally applicable for most of the TFT-LCD modules. The proposed optimization system contains module-under-test (MUT, TFT-LCD module), control program, multimedia display tester for measuring luminance, flicker noise and contrast ratio, and control board for interface between PC and TFT-LCD module. The control board is designed with DSP and FPGA, and it supports various interfaces such as RGB and CPU.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.299-303
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• 2013

In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.329-334
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• 2001

Microstructures of barrier-type oxide layers on aluminum was studied by XRD, TEM and RBS. Fer formation of oxide layer. aluminum was anodized in a boric acid solution. The thickness of the oxide film subjected to applied voltage increased linearly at ratio of 1.54nm/V. For oxide layer anodized at 300V, amorphous structure of oxide layer was not transformed after heat treatment at 50$0^{\circ}C$ , while for oxide layers anodized at higher voltages the amorphous structure crystallized into a ${\gamma}$-alumina without any heat treatment. It was also found that the amorphous structure of oxide layer formed at 100V transformed into crystalline structure by electron irradiation. The structure was identified as ${\gamma}$-alumina.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.39 no.2
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• pp.85-93
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• 2006

This study was conducted to evaluate the optimal processing conditions of smoke-dried powdered oysters and to determine their shelf-life during storage for development of a natural oyster flavoring substance. The optimal conditions for processing of smoke-dried oyster powder with freshy oyster were as follows. Raw shelled oysters were rinsed with 3% saline solution, drained, boiled for 10 minutes at $98^{\circ}C$, and then smoked for 1 hour at $50^{\circ}C$, followed by drying for 4 hours at $80^{\circ}C$ Smoke-dried oyster powder with oyster scraps were prepared as flavoring material. The smoked oyster scraps were submerged in oyster sauce far 10 minutes at room temperature and then dried with hot air for 5 hours at $50^{\circ}C$. The smoke-dried oysters and smoke-dried oyster scraps were then pulverized to 50 mesh and packed in tea bags or vacuum-packed in laminated plastic film bags (PE/PVDC/CPP, $12{\mu}m/15{\mu}m/50{\mu}m$). Compared to non smoke-dried powdered oysters, the smoking and dipping in oyster sauce enhanced the flavor and prevented lipid oxidation of the smoke-dried powdered oyster product. Shelf-life tests indicated that the vacuum-packaging method preserved the quality of smoke-dried powdered oysters stored for 150 days at room temperature.

• Progress in Superconductivity
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• v.8 no.1
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• pp.93-97
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• 2006

YBCO films were deposited on a moving substrate by a spray pyrolysis method using nitrate aqueous solution as precursors. Deposition was made on $LaAlO_3$(100) single crystal substrate by spraying precursor droplets generated by a concentric nozzle. The cation ratio of precursor solution was Y:Ba:Cu=1:2.65:4.5. The distance between nozzle and substrate was 15 cm. Substrate was transported with a speed ranging from 0.23 cm/min to 0.5 cm/min. Films were deposited at the pressure ranging from 10 Torr to 20 Torr and the deposition temperature was ranged from $740^{\circ}C\;to\;790^{\circ}C$. Oxygen partial pressure was controlled between 1 Tow and S Torr. Superconducting YBCO films were obtained from $740^{\circ}C\;to\;790^{\circ}C$ with an oxygen partial pressure of 3 Torr. Scanning electron microscope(SEM) and X-ray diffraction(XRD) observation revealed that films are smooth and highly texture with(001) plans parallel to substrate plane. Highest Jc was 0.72 $MA/cm^2$ at 77K and self-field for the film with a thickness of 0.15 m prepared at a substrate temperature of $740^{\circ}C$ and $PO_2$=3 Torr.