• 제목/요약/키워드: Co deposition

검색결과 1,133건 처리시간 0.035초

분무장치 형상 변경을 통한 초음파 열분해 증착 시스템의 증착 성능 개선 (Improvement of Deposition Performance of Ultrasonic Spray Pyrolysis Deposition System through Atomizer Shape Modification)

  • 김규언;이재후;전재건;박성환;이치범
    • 한국생산제조학회지
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    • 제24권4호
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    • pp.469-474
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    • 2015
  • In ultrasonic spray pyrolysis deposition, a precursor solution is evaporated by an ultrasonic atomizer, then gas-carried into a furnace where the solute is separated from the water vapor. After condensation, polymerization, and nucleation, the solute oxide forms a thin film. To improve the deposition efficiency, the ultrasonic atomizer was studied to optimize the evaporated gas flow. The vat cover was redesigned, using three versions with different inlet factors being tested through a computational fluid dynamic analysis as well as a water evaporation experiment. The atomization rate with a hemispherical cover with a $30^{\circ}$ inlet was found to be 2.4 times higher than that with the original. This improvement was verified with fluorine-doped tin oxide spray pyrolysis deposition. The film obtained with the modified vat cover was 2.4 times thicker than that obtained with the original vat cover.

레이저 국소증착을 이용한 TFT-LCD회로 수정5 미세 텅스텐 패턴 제조 (Laser-induced chemical vapor deposition of tungsten micro patterns for TFT-LCD circuit repair)

  • 박종복;김창재;박상혁;신평은;강형식;정성호
    • 한국정밀공학회지
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    • 제22권8호
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    • pp.165-173
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    • 2005
  • This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

HFCVD에 의한 증착압력 변화에 따른 Single Crystal Diamond 합성 (Synthesis of Single Crystal Diamond by Variation of Deposition Pressure by HFCVD)

  • 김민수;배문기;김성우;김태규
    • 열처리공학회지
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    • 제33권1호
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    • pp.20-24
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    • 2020
  • Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH4/H2 gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm2) size single crystal diamond substrate (100), the CH4/H2 gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.

Exploring precise deposition and influence mechanism for micro-scale serpentine structure fiber

  • Wang, Han;Ou, Weicheng;Zhong, Huiyu;He, Jingfan;Wang, Zuyong;Cai, Nian;Chen, XinDu;Xue, Zengxi;Liao, Jianxiang;Zhan, Daohua;Yao, Jingsong;Wu, Peixuan
    • Advances in nano research
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    • 제12권2호
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    • pp.151-165
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    • 2022
  • Micro-scale serpentine structure fibers are widely used as flexible sensor in the manufacturing of micro-nano flexible electronic devices because of their outstanding non-linear mechanical properties and organizational flexibility. The use of melt electrowriting (MEW) technology, combined with the axial bending effect of the Taylor cone jet in the process, can achieve the micro-scale serpentine structure fibers. Due to the interference of the process parameters, it is still challenging to achieve the precise deposition of micro-scale and high-consistency serpentine structure fibers. In this paper, the micro-scale serpentine structure fiber is produced by MEW combined with axial bending effect. Based on the controlled deposition of MEW, applied voltage, collector speed, nozzle height and nozzle diameter are adjusted to achieve the precise deposition of micro-scale serpentine structure fibers with different morphologies in a single motion dimension. Finally, the influence mechanism of the above four parameters on the precise deposition of micro-scale serpentine fibers is explored.

Co-Cr-(Ta)박막의 자기특성 (The magnetic characteristics of Co-Cr-(Ta) films)

  • Kim, K-H;Jang, K-U;Kim, J-H;S Nakagawa;M Naoe
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.242-244
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    • 1996
  • The effects of $Co_{67}$C $r_{33}$ underlayer on the crystallographec and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}$C $r_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was improved by the $Co_{67}$C $r_{33}$ underlayers rather than Ti ones. However, the coercivity $H_{c}$ of Co-Cr-Ta layers deposited on $Co_{67}$C $r_{33}$ underlayer was as low as 250 Oe even at substrate temperature of 22$0^{\circ}C$. This $H_{c}$ decrease seems to be attributed to the effect of the $Co_{67}$C $r_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.yer.layer.yer.

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Optimizing the Cobalt Deposition Condition using the Experiment Design

  • Cheong, Seonghwee;Song, Ohsung
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.184-185
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    • 2002
  • 최신 강자성 메모리 공정과 실리콘 비메모리 공정에서 Co, Ni, Fe 등 천이금속 계열의 증착 조건이 소자의 특성 향상 및 신뢰성 향상을 위하여 중요성이 점점 중요해 지고 있다. 강자성 메모리(MRAM)의 출현과 함께 Co, Ni, Fe 등의 수십 $\AA$ 두께를 전체 기판에 대해 균일하게 증착할 요구가 생겼다. MRAM에 요구되는 자기저항특성은 이러한 박막의 수 $\AA$ 두께 변화에 급격히 변화할 수 있으므로[1,2] 원하는 두께로 균일하게 증착 할 수 있는 기술의 확보가 필요하다[3]. (중략)

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톨루엔-TEOS를 이용한 유무기 복합 플라즈마 폴리머 박막의 저유전 박막으로서의 특성 연구

  • 조상진;배인섭;;부진효
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2008년도 추계학술대회 초록집
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    • pp.71-72
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    • 2008
  • Ultralow-k 물질은 반도체 성능향상에 있어서 필요한 물질이다 [1]. 이를 위하여 본 실험은 톨루엔과 일반적인 SiO 박막을 제조하는 데 사용되어 지는 TEOS (tetraethyl orthosilicate)를 co-depo.하여 유무기 복합 박막을 PECVD (plasma enhanced chemical vapor deposition)법을 이용하여 증착하였다. 얻어진 박막은 IR과 nano-indentation과 capacitance의 측정을 통하여 측정되었다. 이를 통하여 co-depo.를 통한 유무기 복합 박막이 기존의 CVD법을 이용한 저유전 박막보다 우수한 기계적 특성을 가짐을 확인하였다.

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천이금속 첨가에 따른 이산화망간의 전기전도도 변화 (Electrical Conductivity Change of Manganese oxide with Addition of Transition Metal)

  • 김봉서;이동윤;이희웅;정원섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.2028-2030
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    • 2005
  • The electrical conductivity of manganese oxide and complex manganese oxide produced by anodic deposition method was measured. The additive transition metal is Cu, Co and Fe. The transition metals like as Cu, Co and Fe improved electrical conductivity of complex manganese oxide compared with manganese oxide. This is coincide with the results of molecular orbital calculation by DV-Xa.

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