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http://dx.doi.org/10.12656/jksht.2020.33.1.20

Synthesis of Single Crystal Diamond by Variation of Deposition Pressure by HFCVD  

Kim, Min Su (Department of Nano Fusion Technology, Pusan National University)
Bae, Mun Ki (Department of Nano Fusion Technology, Pusan National University)
Kim, Seong-Woo (Adamant Namiki Precision Jewel Co., Ltd.)
Kim, Tae Gyu (Department of Nanomechatronics Engineering, Pusan National University)
Publication Information
Journal of the Korean Society for Heat Treatment / v.33, no.1, 2020 , pp. 20-24 More about this Journal
Abstract
Single crystal diamonds are in great demand in such fields as mechanical, electronic applications and optoelectronics. Large area single crystal diamonds are attracting attention in future industries for mass production and low cost. In this study, hot filament CVD (HFCVD) is used to grow large area single crystal diamond. However, the growth rate of large area single crystal diamond using HFCVD is known to be very low. The goal of this study is to use single crystal diamond substrates in HFCVD with methane-hydrogen gas mixtures to increase the growth rate of single crystal diamond and to optimize the conditions by analysing the effects of deposition conditions for high quality crystallinity. The deposition pressure, the ratio of CH4/H2 gas, the substrate temperature and the distance between the filament and the substrate were optimized. The sample used a 4×4 (mm2) size single crystal diamond substrate (100), the CH4/H2 gas ratio was fixed at 5%, the substrate temperature was synthesized to about 1000℃. At this time, the deposition pressure was changed to three types of 50, 75, 85 Torr and deposited. Finally, optimization was investigated under pressure conditions to analyse the growth rate and quality of single crystal diamond.
Keywords
HFCVD(Hot Filament Chemical Vapor Deposition); Single crystal diamond; Deposition pressure;
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  • Reference
1 A. Gicquel, K. Hassouni, F. Silva, and J. Achard : Curr. Appl. Phys., 1 (2001) 479.   DOI
2 Wang, Tao, et al. : Diamond and Related Materials 13(1) (2004) 6-13.   DOI
3 J. Isberg, J. Hammersberg, D. J. Twitchen, and A. J. Whitehead : Diamond and Related Materials, 13(2) (2004) 320.   DOI
4 L. Fengnan, Z. Jingwen, W. Xiaoliang, Z. Minghui and W. Hongxing : Crystals 7 (2017) 114.   DOI
5 C. S. Yan, Y. K. Vohra, H. -K. Mao, and R. J. Hemley : Applied Physical Sciences, 99(20) (2002) 12523.
6 T. Bauer, M. Schreck, H. Sternschulte, and B. Stritzker : Diamond and Related Materials, 14(3-7) (2005) 266.   DOI
7 S. Schwarz, C. Rottmair, J. Hirmke, S. Rosiwal, and R. F. Singer : Journal of Crystal Growth, 271 (2004) 425.   DOI
8 U. Lommatzsch, E. H. Wahl, T. G. Owano, C. H. Kruger, and R. N. Zare : Chemical Physics Letters, 320 (2000) 339-44.   DOI
9 H. Aida, K. Koyama, K. Ikejiri, and S. W. Kim : United State Patent, US 20160237592A1 (2016).
10 H. Aida et al. : Appl. Phys. Express 9 (2016) 035504.   DOI