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Laser-induced chemical vapor deposition of tungsten micro patterns for TFT-LCD circuit repair  

Park Jong-Bok (광주과학기술원 대학원 기전공학과)
Kim Chang-Jae (LG전자 생산기술원)
Park Sang-Hyuck (LG전자 생산기술원)
Shin Pyung-Eun (LG전자 생산기술원)
Kang Hyoung-Shik (LG전자 생산기술원)
Jeong Sung-Ho (광주과학기술원 기전공학과)
Publication Information
Journal of the Korean Society for Precision Engineering / v.22, no.8, 2005 , pp. 165-173 More about this Journal
Abstract
This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.
Keywords
Laser-assisted chemical vapor deposition; Direct writing; Circuit repair; LCD; Tungsten deposition;
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