• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.465-470
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• 1999

Sensing properties of $\alpha$-Fe2O3 thin film to reducing gases such as CHx and CO were systematically examined after deposition on Al2O3 substrate by PECVD(Plasma Enhanced Chemical Vapor Deposition)technique. Microstructure of deposited $\alpha$-Fe2O3 thin film showed the porous island structure. This specimen was annealed at 450, 550, $650^{\circ}C$ to enhance the gas sensing properties and investigated in terms of CO and C4H10 concentration from 500ppm to 3,000 ppm at operating temperature of 35$0^{\circ}C$ The gas sensitivity(%) to C4H10 measured at the operating temperature of 35$0^{\circ}C$ was 98.24 (highest sensitivity) 69.51 to CO and 2% to CH4 respectviely.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.18 no.12
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• pp.1033-1038
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• 2006

We carried out the experiments on particle deposition onto the cleanroom wall panels. And then we investigated the particle deposition characteristic coefficients for electrostatic voltages and particle size. It was found that there is little difference in characteristics of the particle deposition between the steel panel and the anti-static coating panel. In case of that the particle size is under $1.0{\mu}m$, the particle deposition characteristic coefficient becomes larger as the electrostatic voltage induced to the cleanroom wall panel is increasing. Where in case of that the particle size is over $3.0{\mu}m$, the particle deposition characteristic coefficients do not show any differences with the electrostatic voltages. It is due to that the electrostatic force is the major particle transport mechanism for submicron particles, while the gravitational settling is the major particle transport mechanism for overmicron particles when the electro-static voltages are induced to the cleanroom wall panel.

• Journal of Welding and Joining
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• v.25 no.4
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• pp.49-57
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• 2007

The optimization of the cladding parameters was studied to maximize the deposition efficiency in the laser cladding using a low power pulsed Nd:YAG laser. STS304 stainless steel plate and Co alloy powder were used as a substrate and powder for cladding, respectively. The six cladding parameters were selected through preliminary experiments and their effects on the deposition efficiency were analyzed statistically. Experiments were designed and carried out using the Taguchi experimental method using a L18 orthogonal array. It was found from the results of analysis of variance(ANOVA) that the powder feed position and powder feed angle had the most significant effects on the deposition efficiency, but the powder feed rate and laser focal position had nearly no effects. The deposition efficiency could be maximized at 0mm of the powder feed position and 50o of the powder feed angle in the experimental range. From this experimental analysis, a new laser cladding head with 20o of the powder feed angle was designed and manufactured. With a new laser cladding head, the highest deposition efficiency of 12.2% could be obtained.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.139-143
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• 2021

Cr-Al-N coatings were deposited onto WC-Co substrates using a cathodic arc evaporation (CAE) system. CAE technique is recognized to be a very useful process for hard coatings because it has many advantages such as high packing density and good adhesion to metallic substrates. In this study, the influence of deposition temperature as a key process parameter on film growth behavior and mechanical properties of Cr-Al-N coatings were systematically investigated and correlated with microstructural changes. From various analyses, the Cr-Al-N coatings prepared at deposition temperature of 450℃ in the CAE process showed excellent mechanical properties with higher deposition rate. The Cr-Al-N coatings with deposition temperature around 450℃ exhibited the highest hardness of about 35 GPa and elastic modulus of 442 GPa. The resistance to elastic strain to failure (H/E ratio) and the index of plastic deformation (H³/E² ratio) were also good values of 0.079 and 0.221 GPa, respectively, at the deposition temperature of 450℃. Based on the XRD, SEM and TEM analyses, the Cr-Al-N coatings exhibited a dense columnar structure with f.c.c. (Cr,Al)N multi-oriented phases in which crystallites showed irregular shapes (50~100nm in size) with many edge dislocations and lattice mismatches.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.737-741
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• 2003

Polycrystalline $Ti_{l-x}$ $Co_{x}$ $O_2$thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{l-x}$ $Co_{x}$ $O_2$thin films with $x\leq$0.05 showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the X$l-x_{l-x}$ $Co_{x}$X$O_2$phases. On the other hand, in case of thin films above x = 0.05, Co-rich clusters formed in a homogeneous $Ti_{l-x}$ $Co_{x}$ $O_2$phase, and the overall ferromagnetic (FM) properties depended on both FMTCO and FMCo. Co-rich clusters with about 10-150 nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• Korean Chemical Engineering Research
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• v.56 no.6
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• pp.895-900
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• 2018

In this study, the electroless deposition of Co-B and Co-W-B alloy thin films was developed and the effect of B and W contents on the hardness of the alloy thin films were investigated. An amorphous Co alloy film was successfully formed by electroless deposition and the contents of B and W in the film were controlled by varying the concentrations of dimethylamine borane and sodium tungstate dihydrate, which were used as a reducing agent and W source, respectively. The hardness of the thin films increased as the contents of B and W were increased because B and W act as impurities suppressing the propagation of dislocation in a film. In addition, it was found that the content of B and W in the Co alloy films can be increased significantly when aeration is not performed. Finally, the hardness of Co-W-B alloy thin film was improved up to 8.9 (${\pm}0.3$) GPa.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.429-434
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• 2015

This study investigates the macroscopic wear behaviors of C/C and C/C-SiC composites coated with hafnium carbide (HfC). To improve the wear resistance of C/C composites, low-pressure chemical vapor deposition (LPCVD) was used to obtain HfC coating. The CVD coatings were deposited at various deposition temperatures of 1300, 1400, and $1500^{\circ}C$. The effect of the substrate material (the C/C substrate, the C/C-CVR substrate, or the C/C-SiC substrate deposited by LSI) was also studied to improve the wear resistance. The experiment used the ball-on-disk method, with a tungsten carbide (WC) ball utilized as an indenter to evaluate the wear behavior. The HfC coatings were found to effectively improve the wear resistance of C/C and C/C-SiC composites, compared with the case of a non-coated C/C composite. The former showed lower friction coefficients and almost no wear loss during the wear test because of the presence of hard coatings. The wear scar width was relatively narrower for the C/C and C/C-SiC composites with hafnium coatings. Wear behavior was found to critically depend on the deposition temperature and the material. Thus, the HfC-coated C/C-SiC composites fabricated at deposition temperatures of $1500^{\circ}C$ showed the best wear resistance, a lower friction coefficient, and almost no loss during the wear test.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.