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Characteristics of Diamond Films Deposited on Cemented Tungsten Carbide Substrate  

김봉준 (경남대학교 전기공학과)
박상현 (경남대학교 전자전기공학)
박재윤 (경남대학교 전자전기공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.7, 2004 , pp. 387-394 More about this Journal
Abstract
Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.
Keywords
Diamond film; MWPCVD; RFPCVD; WC-Co substrate; Raman spectrum;
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Times Cited By KSCI : 1  (Citation Analysis)
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