• Title/Summary/Keyword: Clock bias

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Gender Differences Associated with Pain Characteristics and Treatment in Taiwanese Oncology Outpatients

  • Liang, Shu-Yuan;Wang, Tsae-Jyy;Wu, Shu-Fang;Chao, Ta-Chung;Chuang, Yeu-Hui;Tsay, Shiow-Luan;Tung, Heng-Hsin;Lee, Ming-Der
    • Asian Pacific Journal of Cancer Prevention
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    • v.14 no.7
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    • pp.4077-4082
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    • 2013
  • The purpose of this descriptive and comparative study was to examine gender differences relevant to pain intensity, opioid prescription patterns and opioid consumption in Taiwanese oncology outpatients. The 92 participants had been prescribed opioid analgesics for cancer-related pain at least once in the past week and were asked to complete the Brief Pain Inventory - Chinese questionnaire and to recall the dosage of each opioid analgesic that they had ingested within the previous 24 hours. For opioid prescriptions and consumption, all analgesics were converted to morphine equivalents. The results revealed a significant difference between males and female minimum pain thresholds (t = 2.38, p = 0.02) and current pain thresholds (t = 2.12, p = 0.04), with males reporting a higher intensity of pain than females. In addition, this study found that males tended to use prescribed opioid analgesics more frequently than females on the bases of both around the clock (ATC) (t = 1.90, p = 0.06) and ATC plus as needed (ATC + PRN) (t = 2.33, p = 0.02). However, there was no difference between males and females in opioid prescriptions on an ATC basis (t = 0.52, p = 0.60) or at an ATC + PRN basis (t = 0.40, p = 0.69). The results suggest that there may be a gender bias in the treatment of cancer pain, supporting the proposal of routine examination of the effect of gender on cancer pain management. These findings suggest that clinicians should be particularly aware of potential gender differences during pain monitoring and the consumption of prescribed opioid analgesics.

Design and Implement of 50MHz 10 bits DAC based on double step Thermometer Code (50MHz 2단 온도계 디코더 방식을 사용한 10 bit DAC 설계)

  • Jung, Jun-Hee;Kim, Young-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.6
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    • pp.18-24
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    • 2012
  • This paper reports the test results of a 50MHz/s 10 bits DAC developed with $0.18{\mu}m$ CMOS process for the wireless sensor network application. The 10bits DAC, not likely a typical segmented type, has been designed as a current driving type with double step thermometer decoding architecture in which 10bits are divided into 6bits of MSB and 4bits of LSB. MSB 6bits are converted into 3 bits row thermal codes and 3 bits column thermal codes to control high current cells, and LSB 4 bits are also converted into thermal codes to control the lower current cells. The high and the lower current cells use the same cell size while a bias circuit has been designed to make the amount of lower unit current become 1/16 of high unit current. All thermal codes are synchronized with output latches to prevent glitches on the output signals. The test results show that the DAC consumes 4.3mA DC current with 3.3V DC supply for 2.2Vpp output at 50MHz clock. The linearity characteristics of DAC are the maximum SFDR of 62.02dB, maximum DNL of 0.37 LSB, and maximum INL of 0.67 LSB.

A Single-Bit 2nd-Order CIFF Delta-Sigma Modulator for Precision Measurement of Battery Current (배터리 전류의 정밀 측정을 위한 단일 비트 2차 CIFF 구조 델타 시그마 모듈레이터)

  • Bae, Gi-Gyeong;Cheon, Ji-Min
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.3
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    • pp.184-196
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    • 2020
  • In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for precision measurement of current flowing through a secondary cell battery in a battery management system (BMS). The proposed modulator implements two switched capacitor integrators and a single-bit comparator with peripheral circuits such as a non-overlapping clock generator and a bias circuit. The proposed structure is designed to be applied to low-side current sensing method with low common mode input voltage. Using the low-side current measurement method has the advantage of reducing the burden on the circuit design. In addition, the ±30mV input voltage is resolved by the ADC with 15-bit resolution, eliminating the need for an additional programmable gain amplifier (PGA). The proposed a single-bit 2nd-order delta-sigma modulator has been implemented in a 350-nm CMOS process. It achieves 95.46-dB signal-to-noise-and-distortion ratio (SNDR), 96.01-dB spurious-free dynamic range (SFDR), and 15.56-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 400 for 5-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 670×490 ㎛2 and 414 ㎼, respectively.

A 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS ADC for Digital Multimedia Broadcasting applications (DMB 응용을 위한 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D 변환기)

  • Cho, Young-Jae;Kim, Yong-Woo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.37-47
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    • 2006
  • This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.

A 12b 200KHz 0.52mA $0.47mm^2$ Algorithmic A/D Converter for MEMS Applications (마이크로 전자 기계 시스템 응용을 위한 12비트 200KHz 0.52mA $0.47mm^2$ 알고리즈믹 A/D 변환기)

  • Kim, Young-Ju;Chae, Hee-Sung;Koo, Yong-Seo;Lim, Shin-Il;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.48-57
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    • 2006
  • This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.