• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.927-928
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.25 no.6
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• pp.13-19
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• 2008

• Clean Technology
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• v.11 no.3
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• pp.129-139
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• 2005

Fluoride-type cleaning agents such as TFEA (2,2,2-trifluoroethanol) and HFE (hydrofluoroether) are noticed to be next generation cleaning agents alternative to CFCs since they do not destruct ozones in the stratosphere due to no containment of chloride in the molecule, have lower global warming potential compared to HFCs and HCFCs, and are thermally stable compounds. Thus, the physical properties and cleaning agents were measured and compared with those of CFC-113, 1,1,1-TCE and HCFC-141b which are ozone destruction substances. They were also compared and evaluated with those of IPA and methanol which are currently employing as alternative cleaning agents. And TFEA-based cleaning agents consisted of TFEA and alcohols or HFEs were formulated, their physical properties and cleaning abilities were measured and their utilization as alternative cleaning agents was evaluated. As a result, TFEA and HFEs have lower cleaning ability for their removal of various soils compared to chloride-type cleaning agents, but theyshow excellent cleaning ability for Fluoride-type soils. And it is observed that the formulated cleaning agents of TFEA and alcohols or HFEs caused to increase cleaning ability of flux and unsoluble cutting oil more than 100% compared to their individual component. Therefore, the fluoride-type cleaning agents are expected to be utilized for development of environmental-friendly non aqueous cleaning agents with excellent cleaning ability if they are formulated with proper solvents or additives.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.71-74
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• 2009

Electroplated Cu is a cost efficient metallization method in microelectronic packaging applications. Typically in 3-D chip staking technology, utilizing through silicon via (TSV), electroplated Cu metallization is inevitable for the throughput as well as reducing the cost of ownership (COO).To achieve a comparable film quality to sputtering or CVD, a pre-cleaning process as well as plating process is crucial. In this research, atmospheric plasma is employed to reduce the usage of chemicals, such as trichloroethylene (TCE) and sodium hydroxide (NaHO), by substituting the chemical assisted organic cleaning process with plasma surface treatment for Cu electroplating. By employing atmospheric plasma treatment, marginally acceptable electroplating and cleaning results are achieved without the use of hazardous chemicals. The experimental results show that the substitution of the chemical process with plasma treatment is plausible from an environmentally friendly aspect. In addition, plasma treatment on immersion Sn/Cu was also performed to find out the solderability of plasma treated Sn/Cu for practical industrial applications.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.407-416
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• 1998

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.4
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• pp.553-561
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• 2009

This paper presents development of ROV-type underwater robot capable of cleaning ship hull in automatic mode. The purpose of developing this robot is for underwater cleaning to secure the safety of divers who inspect and clean the ship hull. The robot consists of the cleaning system with rotating brush mechanism, a car-like driving mechanism, inspection system using video, and overall control system for underwater communication and operation. In this paper, we present overall design process of the cleaning system and operating system and technical contents of the overall control system for the underwater cleaning robot.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.179-180
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• 2013

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.

• Membrane Journal
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• v.29 no.6
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• pp.339-347
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• 2019

Forward osmosis (FO) is operated at a lower pressure than reverse osmosis (RO), which has great advantages in terms of fouling control, maintenance, membrane cleaning, and potential energy reduction. In particular, since the membrane fouling layer of the forward osmosis process has a relatively loose and dispersed property, it is possible to control the membrane fouling by physical cleaning, unlike the reverse osmosis process. However, existing studies do not apply the proper cleaning flow rate for forward osmosis physical cleaning, and thus there is a limit that the optimal operation can not be performed. Therefore, this study aims to evaluate the justification of proper flow rate that can show high efficiency cleaning with economical energy amount. The membrane fouling experiments of the forward osmosis process were maintained at a circulating flow rate of 8.54 cm/s and the recovery rates were compared with the three cleaning flow rates. As a result of this experiment, it was confirmed that the 2 × speed cleaning showed the same efficiency as the water permeability recovery rate of the 3 × speed cleaning, and it was confirmed that the 2 × speed cleaning was an appropriate flow rate with high cleaning efficiency and economical SEC.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.