• Membrane and Water Treatment
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• v.8 no.2
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• pp.113-123
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• 2017

This study investigated effects of physical and chemical cleaning methods on the initial flux recovery of fouled membrane in membrane distillation process. A laboratory scale direct contact membrane distillation (DCMD) experiment was performed to treat digested livestock wastewater with 3.89 mg/L suspended solids, 874.7 mg/L COD, 543.7 mg/L nitrogen, 15.6 mg/L total phosphorus, and pH of 8.6. A hydrophobic PVDF membrane with an average pore size of $0.22{\mu}m$ and a porosity of 75 % was installed inside a direct contact type membrane distillation module. The temperature difference between feed and permeate side was maintained at $40^{\circ}C$ with the feed and permeate stream velocity of 0.18 m/s. The results showed that the permeate flux decreased from $22.1L{\cdot}m^{-2}{\cdot}hr^{-1}$ to $19.0L{\cdot}m^{-2}{\cdot}hr^{-1}$ after 75 hours of distillation. The fouled membrane was cleaned first by physical flushing and consecutively by chemicals with NaOCl and citric acid. After the physical cleaning the flux was recovered to 92 % as compared with the initial clean water flux of the virgin membrane. Then 94 % of the flux was recovered after cleaning by 2,000 ppm NaOCl for 90 minutes and finally 97 % of flux recovered after 3 % citric acid for 90 minutes. SEM-EDS and FT-IR analysis results presented that the foulants on the membrane surface were removed effectively after each cleaning step. The contact angle measurement showed that the hydrophobicity of the membrane surface was also restored gradually after each cleaning step to reach nearly the same hydrophobicity level as the virgin membrane.

• Korean Journal of Heritage: History & Science
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• v.46 no.1
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• pp.228-237
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• 2013

Paper relics are affected by a number of complex physical, chemical, biological and artificial damaging factors due to the vulnerability of organic materials. Wet cleaning is a conservation treatment method for removing pollutants from paper artefacts. This study was carried out in order to analyse the effect of wet cleaning on Hanji (Traditional Korean paper made from mulberry trees) which is the main material used in Korean paper relics (historical paper documents). For this study, the color change and folding endurance of artificially degraded paper was analysed before and after immersion wet cleaning. The result showed that washing each twice in 30 minutes is the most appropriate method for obtaining cleaning efficiency and material stability.

• Journal of Korean Society of Water and Wastewater
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• v.35 no.6
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• pp.425-436
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• 2021

In this study, chemically enhanced steam cleaning(CESC) was applied as a novel and efficient method for the control of organic and inorganic fouling in ceramic membrane filtration. The constant filtration regression model and the resistance in series model(RISM) were used to investigate the membrane fouling mechanisms. For total filtration, the coefficient of determination(R²) with an approximate value of 1 was obtained in the intermediate blocking model which is considered as the dominant contamination mechanism. In addition, most of the coefficient values showed similar values and this means that the complex fouling was formed during the filtration period. In the RISM, R _c/R _f increased about 4.37 times in chemically enhanced steam cleaning compared to physical backwashing, which implies that the internal fouling resistance was converted to cake layer resistance, so that the membrane fouling hardly to be removed by physical backwashing could be efficiently removed by chemically enhanced steam cleaning. The results of flux recovery rate showed that high-temperature steam may loosen the structure of the membrane cake layer due to the increase in diffusivity and solubility of chemicals and finally enhance the cleaning effect. As a consequence, it is expected that chemically enhanced steam cleaning can drastically improve the efficiency of membrane filtration process when the characteristics of the foulant are identified.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2001.10a
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• pp.411-415
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• 2001

Advances in computer and sensor technology have made it possible to obtain superlarge manufacturing process data in real time, letting us to extract meaningful information from these superlarge data sets. We propose a systematic data analysis procedure which field engineers can apply easily to manufacture quality products. The procedure consists of data cleaning and data analysis stages. Data cleaning stage is to construct a database suitable for statistical analysis from the original superlarge manufacturing process data. In the data analysis stage, we suggest a graphical easy-to-implement approach to extract practical information from the cleaned database. This study will help manufacturing companies to achieve six sigma quality.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.11-15
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• 2004

Scales, accumulated on some parts of semiconductor equipments such as sputters and CVD during the device fabrication processes, often lower the lifetime of the equipments and production yields. Thus, many equipment parts have be cleaned regularly. In this study, an attempt to establish an effective process to remove scales on the sidewall of collimators located inside the chamber of the sputter was made. The EDX analysis revealed that the scales were composed of Ti and TiN with the columnar structure. Through the trial-and-error experiments, it was found that the etching in the $HNO_3$:$H_2SO_4$:$H_2O$=4:2:4 solution for 5.5 hrs at $67^{\circ}C$, after the oxide removal in the HF solution, and the heat-treatment at $700^{\circ}C$ for 1 min., was the most effective process for the scale removal.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.157-162
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• 2005

The wafer's size has been increased up to 300mm according as the devices have been integrated sophisticatedly. For this process to make 300mm-wafer, it is required strict level which removes the particulates on the surface of wafer. Therefore we need new type wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is very important to control the temperature and the concentration of chemical wet-stat ion. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical in cleaning process, but also it is difficult to make fit quantity and temperature. We propose new chemical supply system, which overcomes the problems via analysis of fluid and thermal transfer on chemical supply system,

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2525-2531
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• 2012

Al-Cu alloy has been used as a circuit material for its low resistance and ease to process for long years at CMOS technology. However, basically metal is very susceptible to corrosion and which has been a long pending trouble in various fields using metal. The defect causes the reliability concerns, so improved methods are necessary to reduce the defect. In the various corrosion parameters, PR strip process conditions after metal etch and optimal cleaning solutions are controllable and increase the process margin to prevent the metal corrosion. This study proposes that chlorine residue after metal etch as the source of metal corrosion, and charges should be removed by optimizing PR strip process condition and cleaning condition.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.77-77
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• 1997

• 월간산업보건
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• s.329
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• pp.49-52
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• 2015