• 제목/요약/키워드: Circuit testing

검색결과 418건 처리시간 0.027초

Static and Dynamic Testing Technique of Inductor Short Turn

  • Piyarat, W.;Tipsuwanporn, V.;Tarasantisuk, C.;Kummool, S.;Im, T.Sum
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1999년도 제14차 학술회의논문집
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    • pp.281-283
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    • 1999
  • This topic presents an inductor short turn testing. From the rudimentary principles, the quality factor(Q) decreases due to inductor short turn. Frequency response varies because of the variation of circuit inductance and resistance. In general, short turn circuit testing is performed by comparing the ratio of an inductance and resistance of inductor in that particular circuit. An alternative method can be done by considering the response of second order circuit which can give both dynamic and static testing, whereas static testing give an error results not more than 2 turns. For dynamic testing, the result is more accurate, which can test fur the short turn number form 1 turn onward.

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$\textrm{I}_{DDQ}$ 테스팅을 위한 빠른 재장형 전류감지기 (Fast built-in current sensor for $\textrm{I}_{DDQ}$ testing)

  • 임창용;김동욱
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.811-814
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    • 1998
  • REcent research about current testing($\textrm{I}_{DDQ}$ testing) has been emphasizing that $\textrm{I}_{DDQ}$ testing in addition to the logical voltage testing is necessary to increase the fault coverage. The $\textrm{I}_{DDQ}$. testing can detect physical faults other than the classical stuck-at type fault, which affect reliability. One of the most critical issues in the $\textrm{I}_{DDQ}$ testing is to insert a built-in current sensor (BICS) that can detect abnormal static currents from the power supply or to the ground. This paper presents a new BICS for internal current testing for large CMOS logic circuits. The proposed BICS uses a single phase clock to minimize the hardware overhead. It detects faulty current flowing and converts it into a corresponding logic voltage level to make converts it into a corresponding logic voltage level to make it possible to use the conventional voltage testing techniqeus. By using current mirroring technique, the proposed BICS can work at very high speed. Because the proposed BICS almost does not affects normal operation of CUT(circuit under test), it can be used to a very large circuit without circuit partitioning. By altenating the operational modes, a circuit can be $\textrm{I}_{DDQ}$-tested as a kind of self-testing fashion by using the proposed BICS.

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IC 신뢰성 향상을 위한 내장형 고장검출 회로의 설계 및 제작 (Design and fabrication of the Built-in Testing Circuit for Improving IC Reliability)

  • 유장우;김후성;윤지영;황상준;성만영
    • 한국전기전자재료학회논문지
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    • 제18권5호
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    • pp.431-438
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    • 2005
  • In this paper, we propose the built-in current testing circuit for improving reliability As the integrated CMOS circuits in a chip are increased, the testability on design and fabrication should be considered to reduce the cost of testing and to guarantee the reliability In addition, the high degree of integration makes more failures which are different from conventional static failures and introduced by the short between transistor nodes and the bridging fault. The proposed built-in current testing method is useful for detecting not only these failures but also low current level failures and faster than conventional method. In normal mode, the detecting circuit is turned off to eliminate the degradation of CUT(Circuits Under Testing). The differential input stage in detecting circuit prevents the degradation of CUT in test mode. It is expected that this circuit improves the quality of semiconductor products, the reliability and the testability.

$SF_6$ 가스차단기의 아크저항에 관한 연구 (A Study On The Arc Resistance of $SF_6$ Gas Circuit Breaker)

  • 정진교;이우영;김규탁
    • 전기학회논문지
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    • 제56권9호
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    • pp.1566-1570
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    • 2007
  • [ $SF_6$ ] gas circuit breakers are widely used for short circuit current interruption in EHV(Extra High Voltage) or UHV(Ultra High Voltage) power systems. To develop $SF_6$ gas circuit breakers, the arc resistance value is necessary to compare experimental results to numerical ones. The arc resistance value can be obtained from a breaking test with a $SF_6$ gas circuit breaker. The direct testing or synthetic testing facility is widely used to verify the breaking ability for $SF_6$ gas circuit breakers. We employed the simplified synthetic testing facility to test a $SF_6$ gas circuit breaker prototype. The arc resistance characteristic was measured and calculated under the various experimental conditions. This arc resistance value can be used for verifying the numerical results from arc simulation in a circuit breakers.

Three-phase Making Test Method for Common Type Circuit Breaker

  • Ryu, Jung-Hyeon;Choi, Ike-Sun;Kim, Kern-Joong
    • Journal of Electrical Engineering and Technology
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    • 제7권5호
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    • pp.778-783
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    • 2012
  • The synthetic short-circuit making test to adequately stress the circuit breaker has been specified as the mandatory test duty in the IEC 62271-100. The purpose of this test is to give the maximum pre-arcing energy during making operation. And this requires the making operation with symmetrical short-circuit current that is established when the breakdown between contact gap occurs near the crest of the applied voltage. Also, if the interrupting chamber of circuit breakers is designed as the type of common enclosure or the operation is made by the gang operated mechanism that three-phase contacts are operated by one common mechanism, three-phase synthetic making test is basically required. Therefore, several testing laboratories have developed and proposed their own test circuits to properly evaluate the breaker performance. With these technical backgrounds, we have developed the new alternative three-phase making circuit.

Weil-Dobke 합성단락 시험회로의 Parameter 분석과 최적화 (Analysis and optimization of Wiel-Dobke synthetic testing circuit parameters)

  • 김맹현;류형기;박종화;고희석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 B
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    • pp.623-627
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    • 1995
  • This paper describes analysis and optimization of Weil-Dobke synthetic testing circuit parameters, which is efficient and economical test method in high capacity AC circuit breaker. In this paper, analysis of synthetic short-circuit test circuit parameter proposed nondimensional factor that is reciprocal comparison value of circuit parameter and is not related to rated of circuit breaker, in particular, this study induce minimization of required energy of critical TRV generation specified in IEC 56 standards and present optimal design of synthetic short circuit testing facilities.

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메모리의 IDDQ 테스트를 위한 내장전류감지 회로의 설계 (A Design of BICS Circuit for IDDQ Testing of Memories)

  • 문홍진;배성환
    • 한국음향학회지
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    • 제18권3호
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    • pp.43-48
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    • 1999
  • IDDQ 테스트는 CMOS 소자로 구성된 회로에서 기능 테스트로는 검출할 수 없는 결함을 찾아내어 회로의 신뢰성을 높여주는 전류테스트 방식이다. 본 논문에서는 IDDQ 테스트를 테스트 대상 칩 내에서 수행할 수 있는 내장전류감지(Built-In Current Sensor : BICS)회로를 설계하였다. 이 회로는 메모리의 IDDQ 테스트를 수행할 수 있도록 설계되었으며, 적은 트랜지스터를 사용하여 빠른 시간 내에 테스트를 수행할 수 있도록 구현하였다.

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3상 90 MVA 단시간전류시험 설비 구축 (The construction of 3-phase 90 MVA short-time withstand current testing facilities)

  • 서윤택;김용식;윤학동;김맹현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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    • pp.700-702
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    • 2005
  • The most electrical apparatus should be able to withstand short-time current and peak current during a specified short time until circuit breakers have interrupted fault current. It defines the short-time withstand ability of electric a apparatus to be remain for a time interval under high fault current conditions. It is specified by both dynamic ability and thermal capability. KERI(Korea Electrotechlology Research Institute) recently constructed the new short-time current and low voltage short circuit testing facilities. This paper shows short- circuit calculation of transformer and describes high current measuring system, and evaluate the result of short-time withstand test used in $3{\phi}$ 90MVA short-time current testing facilities.

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IDDQ 테스팅을 위한 내장형 전류 감지 회로 설계 (Design of a Built-In Current Sensor for IDDQ Testing)

  • 김정범;홍성제;김종
    • 전자공학회논문지C
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    • 제34C권8호
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    • pp.49-63
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    • 1997
  • This paper presents a current sensor that detects defects in CMOS integrated circuits using the current testing technique. The current sensor is built in a CMOS integrated circuit to test an abnormal current. The proposed circuit has a very small impact on the performance of the circuit under test during the normal mode. In the testing mode, the proposed circuit detects the abnormal current caused by permanent manufacturing defects and determines whether the circuit under test is defect-free or not. The proposed current sensor is simple and requires no external voltage and current sources. Hence, the circuit has less area and performance degradation, and is more efficient than any previous works. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects.

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CMOS회로의 신뢰도 향상을 위한 새로운 자기저항소자 전류감지기 특성 분석에 관한 연구 (A study on New Non-Contact MR Current Sensor for the Improvement of Reliability in CMOS VLSI)

  • 서정훈
    • 한국컴퓨터정보학회논문지
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    • 제6권1호
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    • pp.7-13
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    • 2001
  • VLSI의 집적도가 증가함에 따라 설계와 제조과정에서 기존의 논리 테스트 방법으로는 검출하기 어려운 고장들이 발생하고 있다. 최근에는 이러한 고장을 검출하기 위한IDDQ 테스팅 방법의 중요성이 증대되고 있다. 본 논문에서는 CMOS 회로내에서 IDDQ 값을 검사하여 고장의 유무를 검사하는 전류 테스팅 기법에 사용될 수 있는 새로운 전류감지기를 제안한다. 본 논문에서 제안된 전류감지기는 자기저항 소자 MR 전류감지기, 레벨변환기, 비교기로 구성되어 있으며 자동으로 고장을 검출할 수 있다.

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