• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.235-241
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• 2013

A low power CMOS control circuit is applied in an integrated DC-DC buck converter. The integrated converter is composed of a feedback control circuit and power block with 0.35 ${\mu}m$ CMOS process. A current-sensing circuit is integrated with the sense-FET method in the control circuit. In the current-sensing circuit, a current-mirror is used for a voltage follower in order to reduce power consumption with a smaller chip-size. The N-channel MOS acts as a switching device in the current-sensing circuit where the sensing FET is in parallel with the power MOSFET. The amplifier and comparator are designed to obtain a high gain and a fast transient time. The converter offers well-controlled output and accurately sensed inductor current. Simulation work shows that the current-sensing circuit is operated with an accuracy of higher than 90% and the transient time of the error amplifier is controlled within $75{\mu}sec$. The sensing current is in the range of a few hundred ${\mu}A$ at a frequency of 0.6~2 MHz and an input voltage of 3~5 V. The output voltage is obtained as expected with the ripple ratio within 1%.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.2
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• pp.160-166
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• 2015

This study proposes an improved cell balancing circuit for fast equalization among lithium-ion (Li-ion) batteries. A simple voltage sensorless charge balancing circuit has been proposed in the past. This cell balancing circuit automatically transfers energy from high-to low-voltage battery cells. However, the circuit requires a switch with low on-resistance because the balancing speed is limited by the on-resistance of the switch. Balancing speed decreases as the voltage difference among the battery cells decrease. In this study, the balancing speed of the cell balancing circuit is enhanced by using the auxiliary circuit, which boosts the balancing current. The charging current is determined by the nominal battery cell voltage and thus, the balancing speed is almost constant despite the very small voltage differences among the batteries. Simulation results are provided to verify the validity of the proposed cell balancing circuit.

• Journal of Power Electronics
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• v.17 no.1
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• pp.272-281
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• 2017

The DC circuit breaker is essential for supplying stable DC power with the advent of DC transmission/distribution and sensitive loads. Compared with mechanical circuit breakers, which must interrupt a very large fault current due to their slow breaking capability, a solid-state circuit breaker (SSCB) can quickly break a fault current almost within 1 [ms]. Thus, it can reduce the damage of an accident a lot more than mechanical circuit breakers. However, previous DC SSCBs cannot perform the operating duty, and are not economical because many SCR are required. Therefore, this paper proposes a new DC SSCB suitable for DC grids. It has a low semiconductor conduction loss, quick reclosing and rebreaking capabilities. As a result, it can perform the operating duties of reclosing and rebreaking. The proposed DC SSCB is designed and implemented so that it is suitable for home dc distribution at a rated power of 5 [kW] and a voltage of 380 [V]. The operating characteristics are confirmed by simulation and experimental results. In addition, this paper suggests design guidelines so that it can be applied to other DC grids. It is anticipated that the proposed DC SSCB may be utilized to design and realize many DC grid systems.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.277-284
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• 2017

For passive power factor correction, the valley fill circuit approach is attractive for low power applications because of low cost, high efficiency, and simple circuit design. However, to vouch for the product quality, two dc-link capacitors in the valley fill circuit should be selected to withstand the peak rectified ac input voltage. The common mode (CM) and differential mode (DM) choke should be used to suppress the electromagnetic interference (EMI) noise, thereby resulting in large size volume product. This paper presents the practical design and implementation of a valley fill flyback converter with reduced dc link capacitors and EMI magnetic volumes. By using the proposed over voltage protection circuit, dc-link capacitors in the valley fill circuit can be selected to withstand half the peak rectified ac input voltage, and the proposed CM/DM choke can be successfully adopted. The proposed circuit effectiveness is shown by simulation and experimentally verified by a 78W prototype.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.273-279
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• 2000

Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.5
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• pp.458-465
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• 2013

This paper proposes a novel soft-switched auxiliary resonant circuit to provide a Zero-Voltage-Transition at turn-on for a conventional PWM boost converter in a PFC application. The proposed auxiliary circuit enables a main switch of the boost converter to turn on under a zero voltage switching condition and simultaneously achieves both soft-switched turn-on and turn-off. Moreover, for the purpose of an intelligent multi-chip power module fabrication, the proposed circuit is designed to satisfy several design constraints including space saving, low cost, and easy fabrication. As a result, the circuit is easily realized by a low rated MOSFET and a small inductor. Detail operation and the circuit waveform are theoretically explained and then simulation and experimental results are provided based on a 1.8 kW prototype PFC converter in order to verify the effectiveness of the proposed circuit.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.53-56
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• 2018

In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• Tribology and Lubricants
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• v.27 no.3
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• pp.167-173
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• 2011

In this paper, an actuator model of the thrust magnetic bearing for the flywheel energy storage is derived using magnetic circuit theory. And we compared this result with finite element magnetic field analysis result. Based on the actuator model, we made a simulation model of the thrust magnetic bearing system. We showed the closed loop transfer function and sensitivity function of the thrust magnetic bearing system using both the simulation model and the experiment. The experimental result at rotation velocity 18,000rpm of thrust magnetic bearing system is included.

• Progress in Superconductivity
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• v.5 no.1
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• pp.21-25
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• 2003

We have designed and simulated an 1-bit ALU (Arithmetic Logic Unit) by using a half adder. An ALU is the part of a computer processor that carries out arithmetic and logic operations on the operands in computer instruction words. The designed ALU had limited operation functions of OR, AND, XOR, and ADD. It had a pipeline structure. We constructed an 1-bit ALU by using only one half adder and three control switches. We designed the control switches in two ways, dc switch and NDRO (Non Destructive Read Out) switch. We used dc switches because they were simple to use. NDRO pulse switches were used because they can be easily controlled by control signals of SET and RESET and show fast response time. The simulation results showed that designed circuits operate correctly and the circuit minimum margins were ＋/-27%. In this work, we used simulation tools of XIC and WRSPICE. The circuit layouts were also performed. The circuits are being fabricated.