• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.48-55
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• 2000

Recently due to rapid improvement of integrated circuit design environment, size of IC design is to become large to possible design System on Chip(SoC) that one chip with multi function enclosed. Also cause to this rapid change, consumption market is require to spend smallest time for new product development. In this paper to propose a methodology can design a large size IC for save time and applied to design of MPEG Layer 2 decoder to can use audio receiver in digital broadcast system. The digital broadcast audio decoder in this paper is pointed to save hardware size as optimizing algorithm. MPEG Layer 2 decoder algorithm is include MAC to can have an effect on hardware size. So coefficients are using sign digit expression. It is for hardware optimization. If using this method can design MAC without multiplier. The designed audio decoder is using 14,000 gates hardware size and save 22% (4000 gates) hardware usage than using multiplier. Also can design MPEG Layer 2 decoder usable digital broadcast receiver for short time.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.50-57
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• 2000

We propose a logic synthesis algorithm for the design of FPGAs operating at high speed. FPGA is a novel technology that provides programmability in the field. Because of short turnaround time and low manufacturing cost, FPGA has been noticed as an ideal device for system prototyping. Despite these merits, FPGA has drawbacks, namely low integration and long delay time comparing to ASIC. The proposed algorithm partitions a given circuit into subcircuits utilizing a kernel divisor such that the subcircuits can be performed at the same time, hence reducing the delay of the circuit. Experimental results on the MCNC benchmark show that the proposed algorithm is effective by generating circuits having 19.1% les delay on average, when compared to the FlowMap algorithm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.53-60
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• 2009

Due to increased integration density and reduced threshold voltages, leakage current reduction becomes important in the semiconductor IC design for low power consumption. In a combinational logic circuit, the leakage current in the standby state depends on the values of the input. In this research, we developed a new input vector control method to minimize the leakage power. A new efficient algorithm is developed to find the minimal leakage vector. It can reduce the leakage current by 15.7% from the average leakage current and by 6.7% from the results of simulated evolution method during standby or idle states for a set of benchmark circuits. The minimal leakage input vector, with idle input signal, can also reduce the leakage current by 6.8% from the average leakage current and by 3.2% from the results of simulated evolution method for sequential circuits.

• The Journal of the Convergence on Culture Technology
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• v.6 no.2
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• pp.515-520
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• 2020

CMOS used in digital circuit design technology has reached the limit of integration due to quantum tunneling. Quantum-dot cellular automata (QCA), which can replace this, has many advantages such as low power consumption and fast switching speed, so many digital circuits of CMOS have been proposed based on QCA. Among them, the multiplexer is a basic circuit used in various circuits such as D-flip-flops and resistors, and has been studied a lot. However, the existing multiplexer has a disadvantage that space efficiency is not good. Therefore, in this paper, we propose a new multilayered multiplexer using cell interaction and D-latch using it. The multiplexer and D-latch proposed in this paper have improved area, cell count, and delay time, and have excellent connectivity and scalability when designing large circuits. All proposed structures are simulated using QCADesigner to verify operation.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.47-54
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• 2020

Integration of active and passive waveguides is an essential component of the photonic integrated circuit and its elements. Butt joint is one of the important technologies to accomplish it with significant advantages. However, it suffers from high optical loss at the butt joint junction and need of accurate process control to align both waveguides. In this study, we used beam propagation method to simulate an integrated device composed of a laser diode and spot size converter (SSC). Two SSCs with different mode properties were combined with laser waveguide and optical coupling efficiency was simulated. The SSC with larger near field mode showed lower coupling efficiency, however its far field pattern was narrower and more symmetric. Tapered passive waveguide was utilized for enhancing the coupling efficiency and tolerance of waveguide offset at the butt joint without degrading the far field pattern. With this technique, high optical coupling efficiency of 89.6% with narrow far field divergence angle of 16°×16° was obtained.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.56-61
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• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.25-29
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• 2022

Recently, the importance of electronic packaging technology has been attracting attention, and heterogeneous integration technology in which chips are stacked out-of-plane direction is being applied to the electronic packaging field. The 2.5D integration circuit is a technology for stacking chips using an interposer including TSV, and is widely used already. Therefore, it is necessary to make the interposer mechanically reliable in the packaging process that undergoes various thermal processes and mechanical loadings. Considering the structural characteristics of the interposer on which several thin films are deposited, thermal stress due to the difference in thermal expansion coefficients of materials can have a great effect on reliability. In this study, the mechanical reliability of the metal pad for wire bonding on the silicon interposer against thermal stress was evaluated. After heating the interposer to the solder reflow temperature, the delamination of the metal pad that occurred during cooling was observed and the mechanism was investigated. In addition, it was confirmed that the high cooling rate and the defect caused by handling promote delamination of the metal pads.

• Journal of Power Electronics
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• v.17 no.2
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• pp.411-421
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• 2017

An approach based on a 2D lumped model is presented to quantify the voltage transfer gain (VTG) in power converter low power planes. The advantage of the modeling approach is the ease with which typical noise reduction devices such as decoupling capacitors or ferrite beads can be integrated into the model. This feature is enforced by a new modular approach based on effective matrix partitioning, which is presented in the paper. This partitioning is used to decouple power plane equations from external device impedance, which avoids the need for rewriting of a whole set of equation at every change. The model is quickly solved in the frequency domain, which is well suited for an automated layout optimization algorithm. Using frequency domain modeling also allows the integration of frequency-dependent devices such inductors and capacitors, which are required for realistic computation results. In order to check the precision of the modeling approach, VTGs for several layout configurations are computed and compared with experimental measurements based on scattering parameters.

• ETRI Journal
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• v.36 no.1
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.