• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.1005-1008
• /
• 2007

In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.27 no.10A
• /
• pp.969-979
• /
• 2002

This paper proposes an novel method of minimizing Interference which causes data decision error in digital wireless communications. In this method, in order to suppress ISI which is caused by the phase difference between the transmitted and received signal phases, the transmitted and received signals are always kept orthogonal by compensating the transmitted signal for detecting the phase noise and the delay of the received signal was implemented by MOS circuits. To delay the phase of the signal, additive white Gaussian noise (AWGN) environment was used. The phase and delay of the signal transmitted through AWGN channel were compensated in the modulator of the transmitter and the compensated signal was demodulated using quasi-direct conversion receiver and QPSK demodulator. ISI suppression was achieved by keeping the orthogonality between the compensated transmitted signal and the receive signal. The error probability of data decision was compared. By simulation the proposed system was proved to be effective in minimizing the ISI.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.35 no.1A
• /
• pp.80-86
• /
• 2010

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.5
• /
• pp.389-395
• /
• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.3
• /
• pp.1-6
• /
• 2011

In this paper, the IC(Integrated Circuit) for multi-channel synchronous communication was designed by using FPGA and VHDL language. The existing chips for synchronous communication that has been used commercially are composed for one to two channels. Therefore, when communication system with three channels or more is made, the cost becomes high and it becomes complicated for communication system to be realized and also has very little buffer, load that is placed into Microprocessor increases heavily in case of high speed communication or transmission of high-capacity data. The designed IC was improved the function and performance of communication system and reduced costs by designing 8 synchronous communication channels with only one IC, and it has the size of transmitter/receiver buffer with 1024 bytes respectively and consequently high speed communication became possible. It was designed with a communication signal of a form various encoding. To detect errors of communications, the CRC-ITU-T logic and channel MUX logic was designed with hardware logics so that the malfunction can be prevented and errors can be detected more easily and input/output port regarding each communication channel can be used flexibly and consequently the reliability of system was improved. In order to show the performance of designed IC, the test was conducted successfully in Quartus simulation and experiment and the excellence was compared with the 85C3016VSC of ZILOG company that are used widely as chips for synchronous communication.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.35C no.10
• /
• pp.30-37
• /
• 1998

An analog array with a 1.2 $\mu\textrm{m}$ double poly floating gate transistor has been developed with a standard CMOS fabrication process. The programming of each cell by means of an efficient control circuit eliminates the unnecessary erasing operation which has been widely used in conventional analog memories. It is seen that the path of the signal for both the programming and the reading is almost exactly the same since just one comparator supports both operations. It helps to eliminate the effects of the amplifier input-offset voltage problem on the output voltage for the read operation. In the array, there is no pass transistor isolating a cell of interest from the adjacent cells in the array. Instead of the extra transistors, one extra bias voltage, Vmid, is employed. The experimental results from the memory shows that the resolution of the memory is equivalent to the information content of at least six digital cells. Programming/erasing of each cell is achieved with no detectable disturbance of adjacent cells. Finally, the unique shape of the injector structure in a EEPROM is adopted as a cell of analog array. It reduces the programming voltage below the transistor breakdown voltage without any special fabrication process.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.2
• /
• pp.20-27
• /
• 2011

A CMOS Image Sensor(CIS) mounted on mobile appliances always needs a low power consumption because of the battery life cycle. In this paper, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination, a low power single slope A/D converter with a novel comparator, and etc. Based on 0.13um CMOS process, the chip satisfies QVGA resolution($320{\times}240$ pixels) whose pitch is 2.25um and whose structure is 4-Tr active pixel sensor. From the experimental results, the ADC in the middle of CIS has a 10-b resolution, the operating speed of CIS is 16 frame/s, and the power dissipation is 25mW at 3.3V(Analog)/1.8V(Digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption is reduced approximately by 22% in sleep mode, 20% in operating mode.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.2
• /
• pp.35-43
• /
• 2011

In this paper, an analysis on I/Q mismatch characteristics of a quadrature LC VCO(Voltage controlled oscillator) is presented. Based on this analysis, a new I/Q mismatch compensator is proposed. The proposed I/Q mismatch compensator utilizes an amplitude mismatch detector rather than the conventional phase mismatch detector requiring much more wide frequency bandwidth. To verify the proposed circuit, a 2.5GHz quadrature LC VCO was designed in a $0.18{\mu}m$ CMOS process and tested. Test results show that an amplitude mismatch detector achieves similar I/Q mismatch compensation performance as that of the conventional phase mismatch detector. The I/Q mismatch compensator consumes 0.4mA from 1.8V supply voltage and occupies $0.04mm^2$.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.6
• /
• pp.25-29
• /
• 2017

This paper presents a hetero-integration of electrostatically actuated RF MEMS Switch and step up DC-DC converter on a redistribution layer using commercial PCB process. RF characteristics of Duroid with $56{\Omega}$ impedance GCPW transmission line and that of FR4 with $59{\Omega}$ impedance CPW transmission line were analyzed. From DC to 6GHz, RF characteristics of Duroid were better than that of FR4, insertion loss was 2.08dB lower, return loss was 3.91dB higher, and isolation was 3.33dB higher.

• Journal of IKEEE
• /
• v.20 no.3
• /
• pp.251-259
• /
• 2016

This paper describes that how to enhance the robustness of semiconductor TRM(Transmitter and Receiver Module) through the bias sequencing and tuning the switching time. Previous circuit designs focused on improving the MDS(Minimum Detection Signal) performance. Because TRM has critical problem which transmission output signal leak into receiver by it's compact design. Under this condition, TRM was frequently broken down within the MTBF(Mean Time Between Failure). This study proposes the bias sequencing and tuning the switching time to improve above problem. At first, we collected major failure symptom and infer it's cause. Second, we demonstrated it's effect by derive the improvement method and apply it to our system. And finally we can convinced that the proposed method clear the frequent failure problem with its lack of isolation.