• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• Journal of IKEEE
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• v.23 no.2
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• pp.364-369
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• 2019

The ratios of compliant branch circuit of leakage current and insulation resistance were 68.4% and 90.8%, respectively at the lamp load, 64.6% and 96.5% at the heat load, 86.7% and 88.9% at the power load. Limit of residual current of the zero phase secondary current value at the zero phase primary current was 100 A when rated primary current 400 A more than. The reason why the ratio of branch circuit of the leakage current was less than the ratio of compliant branch circuit of the insulation resistance might be that the leakage current includes the capacitive leakage current and the zero phase current.

• Journal of the Korean Society for Railway
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• v.13 no.6
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• pp.565-569
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• 2010

Sleepers perform bearing rails and are underneath rails. Therefore, the current and voltage of rails are related to the resistance of sleepers. In case that the resistance of sleepers are low, operation problems of relays in tr ack circuits are occur because of flowing leakage current through sleepers. So the condition that the track circuit is always occupied by a train is kept. Currently, the creosote has been used in wood sleepers due to prevention against putrefaction. After a long time, the material is changeable to the chemistry material bases on carbon dioxide or carbon. So, the insulation resistance of wood sleepers is lower than the initial insulation resistance. In case of effecting wood sleepers as conductors, amplitude of the current and voltage on rails is decreased. This phenomenon causes that a train does not receive signals. In this paper, four-network model on the track circuit including the insulation resistance of sleepers is suggested. Also, the standard value of the resistance in straight section is proposed in the wood sleeper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.200-203
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• 2003

A study on the arc resistance and light reflectance of PTFE (polytetrafluoroethylene) nozzle for circuit breaker is presented. PTFE has been used widely as a material for circuit breaker nozzle. PTFE has excellent electrical resistivity, high melt viscosity, chemical inertness, heat resistance and low loss factor. PTFE melts at $327\;^{\circ}C$ but the viscosity is very high above the melting point. In the arcing environment in a circuit breaker, the fraction of the power is emitted out of the arc and reaches the nozzle wall by radiation, causing ablation at the surface and in the depth of the wall. Some fraction of the radiation power emitted out of the arc directly break up the chemical bonds at the surface while some fraction of the radiation power penetrates into the wall, heats up the material to evaporation temperature and causes damages deeper inside the volume of the nozzle. In this paper, some fillers that have endurance in the high temperature arc environment were added into PTFE. Adding some fillers into PTFE was expected to be efficient in improving the endurability against radiation. The light reflectance and arc resistance of PTFE composites were investigated.

• Journal of The Korean Society of Integrative Medicine
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• v.7 no.1
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• pp.65-74
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• 2019

Purpose : The purpose of this study was to determine the effects of 12 weeks of circuit training on inflammatory markers, blood lipids, and body composition of obese middle-aged women. Methods : Twenty-four obese women were randomly divided into three groups (circuit exercise training, CT; aerobic exercise training, AT; resistance exercise training, RT). All the subjects participated in the exercise program for 60 minutes, 3 times a week for 12 weeks. Results : Significant differences found in the participants pre-and post exercise training C-reactive protein (CRP), fibrinogen, and adiponectin levels. The CT participants experience an expected increase in their adiponectin levels. Significantly improved blood TC, LDL-C, HDL-C, and TG levels were found after 12 weeks of exercise. The AT and CT groups showed greater improvements in their HDL-C, LDL-C, and TG levels than the RT group. Significant differences were found in the participants pre-and post-exercise training body weight, body fat percentage, and body mass index (BMI). Conclusion : The CT participants body fat percentages decreased more than the RT group's percentages. In conclusion, obese women who completed 12 weeks of circuit exercise training (aerobics + resistance exercise) had significant improvements in their inflammatory markers, blood lipids, and body fat percentage.

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.357-361
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• 2018

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.2
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• pp.236-242
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• 1986

The dependence of the current-voltage characteristics of hydrogenated amorphous silicon pin solar cells on the illumimination light intensity has been investigated. The open circuit voltage increases linearly with increasing the logarithm of light intensity up to AM 1, and nearly saturates above AM 1, indicating the open circuit voltage approaching the built-in potential of the pin solar cell above AM 1. The short circuit current density increase with light intensity in proportion to I**0.85 before and I**0.97 after light exposure. Since the series resistance devreses and shunt resistance increases with light intensily, the fill factor increases with light illumination. To increase the fill factor at high illumination in large area solar cells, t6he grid pattern on the ITO substrates should be made. Long light exposure on the solar cells gives rise to the increase of bulk resistance and defect states, resulting in the decrease of the fil factor and short circuit current density. The potential drop in the bulk of the a-Si:H pin solar cells at short circuit condition increases with decreasing temperature, and increases after long light exposure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.3
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• pp.1-8
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• 1972

The characteristics of tunnel diode pair circuit biased within the negative resistance region has also the voltage-control type negative resistance region, and the voltage at the center point of negative resistance region is described as the square-wave relaxation oscillation. In this paper, the period T, positive duration T1, negative duration T2 of the pulse are obatined from the characteristic curve T, positive duration T1, negative duration T2 of the pulse are obtained from the characteristic curve and observed actually, considring the fact that the pulse width and the period of square-wave at the center point of the negative resistance region is able to be controlle dby the blas volgate. Mereover, the relationship between T, T1 or T2 and circuit parameters is searched for and the Circuit parameters that satisfy the conditions of T1-T2 being proportional to the variation of bias voltage with Teonstant are determined. Thereafter, the bias voltage and the signal voltage are inserted serially to the PWM circuit and the characteristics of that circuit is analyzed.

• Proceedings of the KWS Conference
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• 1999.10a
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• pp.142-145
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• 1999

The dynamic resistance monitoring is one of the important issues in that in-process and real time quality assurance of resistance spot weld is needed to increase the product reliability. Secondary dynamic resistance patterns, as a real manner, are hard to adapt those factors in real time and in-plant system. In the present study, a new dynamic resistance detecting method is presented as a practical manner of weld quality assurance at the primary circuit. By the correlation analysis, it is found that the primary dynamic resistance patterns are basically similar to those of the secondary. Various dynamic resistance indices are characterized with the primary curve. And quality of the weld, like the tensile shear strength, is estimated using adaptive neuro-fuzzy estimation system which is consisted of the Sugeno fuzzy algorithm. Through the fuzzy clustering and parameter optimization, real time weld quality assurance system with less efforts is proposed.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.419-422
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• 2004

A sensing scheme for current-mode magneto-resistance random access memory (MRAM) with a 1T1MTJ cell structure is proposed. Magnetic tunnel junction (MTJ) resistance, which is HIGH or LOW, is converted to different cell currents during READ operation. The cell current is then amplified to be evaluated by the reference cell current. In this scheme, conventional bit line sense amplifiers are not required and the operation is less sensitive to voltage noise than that of voltage-mode circuit is. It has been confirmed with HSPICE simulations using a 0.35-${\mu}m$ 2-poly 4-metal CMOS technology.