• 한국재난정보학회 논문집
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• 제11권1호
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• pp.23-34
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• 2015

본 연구에서는 충청북도 내 각 지자체를 대상으로 지역별 대설특성을 통한 잠재적 위험요인을 분석하였다. 분석결과, 35년 평균적설량으로 인한 잠재적 위험도는 제천시와 보은군이 가장 높았으며 35년 최대적설량을 통한 잠재적 위험요인에서는 다른 결과가 도출되는 것을 알 수 있었다. 잠재적 위험요인에 대한 지역의 빈도수를 살펴보면 가장 높은 지역은 보은군, 제천시, 괴산군, 영동군, 청주시 순으로 도출되었다. 본 연구는 일반적인 대설특성 뿐만 아니라 잠재적인 위험요인들을 도출하고 그에 대한 위험도를 제시하였다는 점에서 그 의의를 가진다. 본 연구의 결과는 향후 충청북도 각 지자체들의 제설대응체계 및 방안 마련에 기초자료로 활용할 수 있을 것이다.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• 한국환경복원기술학회지
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• 제19권6호
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• pp.1-17
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• 2016

The study was aimed to understand the ecological status of the Maebongsan urban forest in Cheongju-si through investigating the vegetation, soil characteristics, and soil microarthropods. Phytosociological analysis for twenty plots revealed that the plant communities were classified into Pinus rigida community, Robinia pseudoacacia community, Castanea crenata community, Quercus acutissima community, Pinus strobus community, Pinus koraiensis community, and Larix kaempferi community. The importance value showed that afforestation tree species like Castanea crenata, Robinia pseudoacacia, and Pinus rigida dominate the urban forest. DBH analysis indicated that although the plant communities seem to be under the succession to Quercus forest, the dominance of Castanea crenata and Robinia pseudoacacia might still persist for several more decades. The properties of soils from the plant communities showed that loamy sand and sandy loam in soil texture, low organic matters, and severe acidification. The abundance of soil microarthropods were not different among the plant communities except Castanea crenata community and Pinus koraiensis community. The two communities showed especially low abundance of collembola and acarina. Thus, we can say that Castanea crenata community and Pinus koraiensis community seem to have been influenced strongly by anthropogenic activities.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.99-104
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• 2020

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.105-109
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• 2019

Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

• 한국산학기술학회논문지
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• 제13권3호
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• pp.1279-1283
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• 2012

탄소 주입 실리콘산화박막은 ICP-CVD에 의하여 dimethyldimethoxysilane를 이용하여 증착하였다. 화학적 변화와 광학적 변화에 대하여 관찰하기 위해서 FTIR, 스펙트라 포토미터 그리고 엘립소미터를 이용하였다. SiOC 박막의 결합구조는 증착과정에서 형성되고 열처리과정을 통하여 접착도가 증가된다. SiOC 박막은 알킬기와 수산기 사이의 화학적인 반응에 의해서 분극이 감소되고 비정질도는 증가된다. FTIR에서 950 cm-1 이하의 영역에서 알킬기와 수산기에 따른 분극의 특성에 따라서 FTIR 픽의 모양이 두가지로 다르게 나타났다. 분극이 가장 낮은 샘플에서 굴절률은 증가하였고 두께는 감소하는 특성을 관찰할 수 있었다.

• 한국산학기술학회논문지
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• 제11권11호
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• pp.4468-4472
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• 2010

ICP-CVD 방법에 의해 제작된 SiOC 박막을 유전상수와 화학적 이동의 상관성에 대하여 조사하였다. SiOC 박막은 플라즈마 에너지에 의해서 해리작용과 재결합작용에 의해서 cross link 구조를 갖게 되는 Si-O 와 C-O 결합으로 구성된 $930{\sim}1230\;cm^{-1}$ 영역에서 혼합된 Si-O-C 주 결합으로 이루어졌다. C-O 결합은 $1270cm^{-1}$에서 보여지는 Si-$CH_3$ 결합의 말단부분인 C-H 결합이 전기음성도가 큰 산소에 의해서 끌리는 효과로부터 만들어진 결합이다. 그러나 Si-O 결합은 Si-$CH_3$ 결합이 분해되고 난뒤 2차 이온결합에 의해서 만들어진 결합이다. Si-O 결합의 증가는 주결합에서 오른쪽 결합이 증가하기 때문이며, FTIR 스펙트라에 의해서 red shift로 나타났다. 이러한 결과는 SiOC 박막이 보다 더 안정되고 강한 박막임을 의미한다. 그래서 SiOC 박막은 열처리 후 비정질도가 높고 거칠기가 감소되는 것을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• 한국전문물리치료학회지
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• 제26권3호
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• pp.76-83
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• 2019

Background: The hyoid bone is the only non-jointed structure among the skeletal tissues of the head and neck region, and its movement and posture depend on the attached muscle, ligament, and fascia. The location of the hyoid bone is important for airway maintenance, vocalization, chewing, swallowing, breathing, and head and scapular position. In general, the location of the hyoid bone is measured using radiographs and 3D computed tomography, and no studies have reported on clinical measurement methods. Objects: This study was performed to suggest clinical measurement methods for lateral deviation of the hyoid bone and to evaluate their reliability. Methods: In this study, 24 healthy volunteers (12 males, 12 females) in Cheongju-si participated. Two examiners performed the center point test and lateral motion test twice each to measure the lateral displacement of the hyoid bone. The reliability of the center point test was analyzed using intra-class correlation coefficients (ICC), and the reliability of the lateral motion test was analyzed using Cohen's kappa coefficient. Results: The intra-rater reliability of the center point test was good, and the inter-rater reliability was moderate. The intra- and inter-rater reliability of the lateral motion test showed substantial reliability. Conclusion: Based on these results, the center point test and the lateral motion test can be used as an alternative methods of the measurement of lateral deviation of the hyoid bone for people who have musculoskeletal disorders of the head, neck, and scapula.