• Journal of the Society of Disaster Information
• /
• v.11 no.1
• /
• pp.23-34
• /
• 2015

This Study analyzed heavy snow properties according to the area that was based by winter weather properties and the damage data by the heavy snow among each local government of Chungcheongbuk-do. The result of analysis, Jecheon-si and Boeun-gun are represented the highest dangerous regions by potential degree of risk by average amount of snowfall for 35 years. But, the potential degree of risk by maximum amount of snowfall for 35 years is different with it. Cheongju-si and Youngdong-gun, Goesan-gun, Boeun-gun are represented the highest dangerous regions. Examining the frequency of regions with potential danger factors according to the characteristics of heavy snowfall, Boeun-gun and Jecheon-si, Goesan-gun, Youngdong-gun, Cheongju-si is derived the highest dangerous regions in Chungcheongbuk-do.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.99-102
• /
• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Journal of the Korean Society of Environmental Restoration Technology
• /
• v.19 no.6
• /
• pp.1-17
• /
• 2016

The study was aimed to understand the ecological status of the Maebongsan urban forest in Cheongju-si through investigating the vegetation, soil characteristics, and soil microarthropods. Phytosociological analysis for twenty plots revealed that the plant communities were classified into Pinus rigida community, Robinia pseudoacacia community, Castanea crenata community, Quercus acutissima community, Pinus strobus community, Pinus koraiensis community, and Larix kaempferi community. The importance value showed that afforestation tree species like Castanea crenata, Robinia pseudoacacia, and Pinus rigida dominate the urban forest. DBH analysis indicated that although the plant communities seem to be under the succession to Quercus forest, the dominance of Castanea crenata and Robinia pseudoacacia might still persist for several more decades. The properties of soils from the plant communities showed that loamy sand and sandy loam in soil texture, low organic matters, and severe acidification. The abundance of soil microarthropods were not different among the plant communities except Castanea crenata community and Pinus koraiensis community. The two communities showed especially low abundance of collembola and acarina. Thus, we can say that Castanea crenata community and Pinus koraiensis community seem to have been influenced strongly by anthropogenic activities.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.4
• /
• pp.99-104
• /
• 2020

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.5
• /
• pp.351-354
• /
• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.3
• /
• pp.105-109
• /
• 2019

Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.13 no.3
• /
• pp.1279-1283
• /
• 2012

SiOC films made by the inductive coupled CVD with dimethyldimethoxysilane were analyzed to find out the correlation between the chemical and optical properties by using the Foruier transform infrared spectroscopy, spectrophotometer and ellipsometer. The bonding structure of SiOC film was formed during the depositeion and the adhesion was increased after annealing process. SiOC film decreased the polarization by the chemical reaction between alkyl group and hydroxyl group, and increased the degree of amorphism. For the range of 950 cm-1 in FTIR spectra, the spectra were divided into two types depending on polar sites. The refractive index of SiOC film with the lowest polarization increased and the thickness of that decreased.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.11
• /
• pp.4468-4472
• /
• 2010

SiOC films made by the inductively coupled plasma chemical vapor deposition were researched the relationship between the dielectric constant and the chemical shift. SiOC film obtained by plasma method had the main Si-O-C bond with the molecule vibration mode in the range of $930{\sim}1230\;cm^{-1}$ which consists of C-O and Si-O bonds related to the cross link formation according to the dissociation and recombination. The C-O bond originated from the elongation effect by the neighboring highly electron negative oxygen atoms at terminal C-H bond in Si-$CH_3$ of $1270cm^{-1}$. However, the Si-O bond was formed from the second ionic sites recombined after the dissociation of Si-$CH_3$ of $1270cm^{-1}$. The increase of the Si-O bond induced the redshift as the shift of peak in FTIR spectra because of the increase of right shoulder in main bond. These results mean that SiOC films become more stable and stronger than SiOC film with dominant C-O bond. So it was researched that the roughness was also decreased due to the high degree of amorphous structure at SiOC film with the redshift after annealing.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.1
• /
• pp.46-49
• /
• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• Physical Therapy Korea
• /
• v.26 no.3
• /
• pp.76-83
• /
• 2019

Background: The hyoid bone is the only non-jointed structure among the skeletal tissues of the head and neck region, and its movement and posture depend on the attached muscle, ligament, and fascia. The location of the hyoid bone is important for airway maintenance, vocalization, chewing, swallowing, breathing, and head and scapular position. In general, the location of the hyoid bone is measured using radiographs and 3D computed tomography, and no studies have reported on clinical measurement methods. Objects: This study was performed to suggest clinical measurement methods for lateral deviation of the hyoid bone and to evaluate their reliability. Methods: In this study, 24 healthy volunteers (12 males, 12 females) in Cheongju-si participated. Two examiners performed the center point test and lateral motion test twice each to measure the lateral displacement of the hyoid bone. The reliability of the center point test was analyzed using intra-class correlation coefficients (ICC), and the reliability of the lateral motion test was analyzed using Cohen's kappa coefficient. Results: The intra-rater reliability of the center point test was good, and the inter-rater reliability was moderate. The intra- and inter-rater reliability of the lateral motion test showed substantial reliability. Conclusion: Based on these results, the center point test and the lateral motion test can be used as an alternative methods of the measurement of lateral deviation of the hyoid bone for people who have musculoskeletal disorders of the head, neck, and scapula.