• Title/Summary/Keyword: Chemical reduction deposition

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The geometry change of carbon nanofilaments by SF6 incorporation in a thermal chemical vapor deposition system

  • Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.3
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    • pp.119-123
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    • 2011
  • Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

Chemical Vapor Deposition Using Ethylene Gas toward Low Temperature Growth of Single-Walled Carbon Nanotubes

  • Jo, Sung-Il;Jeong, Goo-Hwan
    • Applied Science and Convergence Technology
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    • v.24 no.6
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    • pp.262-267
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    • 2015
  • We demonstrate the growth of single-walled carbon nanotubes (SWNTs) using ethylene-based chemical vapor deposition (CVD) and ferritin-induced catalytic particles toward growth temperature reduction. We first optimized the gas composition of $H_2$ and $C_2H_4$ at 500 and 30 sccm, respectively. On a planar $SiO_2$ substrate, high density SWNTs were grown at a minimum temperature of $760^{\circ}C$. In the case of growth using nanoporous templates, many suspended SWNTs were also observed from the samples grown at $760^{\circ}C$; low values of $I_D/I_G$ in the Raman spectra were also obtained. This means that the temperature of $760^{\circ}C$ is sufficient for SWNT growth in ethylene-based CVD and that ethylene is more effective that methane for low temperature growth. Our results provide a recipe for low temperature growth of SWNT; such growth is crucial for SWNT-based applications.

Study on Photocatalytic Cr(VI) Reduction with Metal Deposited Anodized $TiO_2$ Tube (금속담지된 $TiO_2$ 나노튜브를 활용한 Cr(VI)환원의 광화학적 효율 연구)

  • Heo, Ah-Young;Lee, Chang-Ha;Park, Min-Sung;Shim, Eun-Jung;Yoon, Jae-Kyung;Joo, Hyunk-Ku
    • Journal of Hydrogen and New Energy
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    • v.21 no.4
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    • pp.301-306
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    • 2010
  • The present work is performed to photocatalytically reduce Cr(VI) by means of metal deposited anodized $TiO_2$ tubes, which are prepared by anodization of Ti foil followed by metal deposition. Stably immobilized photo-reactive materials are favored in the field of detoxification in a conventional aqueous medium, preventing gradual loss of efficiency and process malfunction due to detachment of the materials. The prepared samples are characterized by SEM, TEM, EDAX, and photocurrent. The metal deposited-$TiO_2$ electrode shows higher efficiency for Cr(VI) reduction (ca. 20%) and higher ability for adsorption (4~5 times) than pure one.

Fabrication of Metal-Semiconductor Interface in Porous Silicon and Its Photoelectrochemical Hydrogen Production

  • Oh, Il-Whan;Kye, Joo-Hong;Hwang, Seong-Pil
    • Bulletin of the Korean Chemical Society
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    • v.32 no.12
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    • pp.4392-4396
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    • 2011
  • Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

Deposition of Functional Organic and Inorganic Layer on the Cathode for the Improved Electrochemical Performance of Li-S Battery

  • Sohn, Hiesang
    • Korean Chemical Engineering Research
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    • v.55 no.4
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    • pp.483-489
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    • 2017
  • The loss of the sulfur cathode material through dissolution of the polysulfide into electrolyte causes a significant capacity reduction of the lithium-sulfur cell during the charge-discharge reaction, thereby debilitating the electrochemical performance of the cell. We addressed this problem by using a chemical and physical approach called reduction of polysulfide dissolution through direct coating functional inorganic (graphene oxide) or organic layer (polyethylene oxide) on electrode, since the deposition of external functional layer can chemically interact with polysulfide and physically prevent the leakage of lithium polysulfide out of the electrode. Through this approach, we obtained a composite electrode for a lithium-sulfur battery (sulfur: 60%) coated with uniform and thin external functional layers where the thin external layer was coated on the electrode by solution coating and drying by a subsequent heat treatment at low temperature (${\sim}80^{\circ}C$). The external functional layer, such as inorganic or organic layer, not only alleviates the dissolution of the polysulfide electrolyte during the charging/discharging through physical layer formation, but also makes a chemical interaction between the polysulfide and the functional layer. As-formed lithium-sulfur battery exhibits stable cycling electrochemical performance during charging and discharging at a reversible capacity of 700~1187 mAh/g at 0.1 C (1 C = 1675 mA/g) for 30 cycles or more.

Chemical Vapor Deposition of Tungsten by Silane Reduction (사일린 환원반응에 의한 텅스텐 박막의 화학증착)

  • Hwang, Sung-Bo;Choi, Kyeong-Keun;Rhee Shi-Woo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.10
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    • pp.113-123
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    • 1990
  • Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.

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Preparation and Properties of ZnO Thin Films by Metal-Organic Chemical Vapor Deposition Using Diethylzinc Source (Diethylzinc를 Source로 사용하는 화학증착법(MOCVD)에 의한 ZnO 박막의 제조 및 물성에 관한 연구)

  • 김경준;김광호
    • Journal of the Korean Ceramic Society
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    • v.28 no.8
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    • pp.585-592
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    • 1991
  • ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{\circ}C$ to $450^{\circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{\circ}C$ to $350^{\circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{\circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{\circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $\Omega$cm at $450^{\circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.

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A Synthesis of High Purity Single-Walled Carbon Nanotubes from Small Diameters of Cobalt Nanoparticles by Using Oxygen-Assisted Chemical Vapor Deposition Process

  • Byon, Hye-Ryung;Lim, Hyun-Seob;Song, Hyun-Jae;Choi, Hee-Cheul
    • Bulletin of the Korean Chemical Society
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    • v.28 no.11
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    • pp.2056-2060
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    • 2007
  • A successful combination of “oxygen-assisted chemical vapor deposition (CVD) process” and Co catalyst nanoparticles to grow highly pure single walled carbon nanotubes (SWNTs) was demonstrated. Recently, it was reported that addition of small amounts of oxygen during CVD process dramatically increased the purity and yield of carbon nanotubes. However, this strategy could not be applied for discrete Fe nanoparticle catalysts from which appropriate yields of SWNTs could be grown directly on solid substrates, and fabricated into field effect transistors (FETs) quite efficiently. The main reason for this failure is due to the carbothermal reduction which results in SiO2 nanotrench formation. We found that the oxygen-assisted CVD process could be successfully applied for the growth of highly pure SWNTs by switching the catalyst from Fe to Co nanoparticles. The topological morphologies and p-type transistor electrical transport properties of the grown SWNTs were examined by using atomic force microscope (AFM), Raman, and from FET devices fabricated by photolithography.

In-Situ Optical Monitoring of Electrochemical Copper Deposition Process for Semiconductor Interconnection Technology

  • Hong, Sang-Jeen;Wang, Li;Seo, Dong-Sun;Yoon, Tae-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.2
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    • pp.78-84
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    • 2012
  • An in-situ optical monitoring method for real-time process monitoring of electrochemical copper deposition (CED) is presented. Process variables to be controlled in achieving desired process results are numerous in the CED process, and the importance of the chemical bath conditions cannot be overemphasized for a successful process. Conventional monitoring of the chemical solution for CED relies on the pH value of the solution, electrical voltage level for the reduction of metal cations, and gravity measurement by immersing sensors into a plating bath. We propose a nonintrusive optical monitoring technique using three types of optical sensors such as chromatic sensors and UV/VIS spectroscopy sensors as potential candidates as a feasible optical monitoring method. By monitoring the color of the plating solution in the bath, we revealed that optically acquired information is strongly related to the thickness of the deposited copper on the wafers, and that the chromatic information is inversely proportional to the ratio of $Cu$ (111) and {$Cu$ (111)+$Cu$ (200)}, which can used to measure the quality of the chemical solution for electrochemical copper deposition in advanced interconnection technology.

Improving Gas Barrier Property of Polymer Based Nanocomposites Using Layer by Layer Deposition Method for Hydrogen Tank Liner

  • Lee, Suyeon;Han, Hye Seong;Seong, Dong Gi
    • Composites Research
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    • v.35 no.3
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    • pp.121-126
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    • 2022
  • Owing to advantages of polymeric materials for hydrogen tank liner like light-weight property and high specific strength, polymer based composites have gained much attention. Despite of many benefits, polymeric materials for fuel cell tank cause problems which is critical to applications as low gas barrier property, and poor processability when adding fillers. For these reasons, improving gas barrier property of polymer composites is required to study for expanding application fields. This work presents impermeable polymer nanocomposites by introducing thin barrier coating using layer by layer (LBL) deposition method. Also, bi-layered and quad-layered nanocomposites were fabricated and compared for identifying relationship between deposition step and gas barrier property. Reduction in gas permeability was observed without interrupting mechanical property and processability. It is discussed that proper coating conditions were suggested when different coating materials and deposition steps were applied. We investigated morphology, gas barrier property and mechanical properties of fabricated nanocomposites by FE-SEM, Oxygen permeation analyzer, UTM, respectively. In addition, we revealed the mechanism of barrier performance of LBL coating using materials which have high aspect ratio.