• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.42-43
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• 2005

본 연구에서는 Cu 슬러리에 부식방지제인 BTA를 첨가하여 슬러리내의 과수의 농도, pH 의 변화, 연마입자의 종류에 따라 연마거동에 미치는 영향과 각 chemical 변화에 따른 Cu surface의 변화를 살펴보았다. BTA (Benzotriazole, $C_6H_4C_3H$)를 첨가함으로써 본 연구에서 시행된 pH 와 과수의 변화에 상관없이 Cu-BTA film을 형성하여 Cu의 dissolution을 최대한 억제하는 것을 확인할 수 있었다. 또 그로인해 BTA를 첨가하지 않았을 때보다 얇은 passivation layer를 형성함을 알 수 있었고 contact angle도 더 높았다. 연마율의 경우에도 BTA가 첨가됨으로써 감소됨을 확인할 수 있었고 연마입자로 alumina particle을 사용한 경우에는 pH6, 과수 10vol%이상에서는 오히려 연마율이 증가하였다. fumed silica의 경우에는 hardness가 작아 mechanical적인 제거력이 낮아 BTA가 첨가되어도 연마율에는 큰 영향이 없었다.

• Tribology and Lubricants
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• 제31권6호
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• pp.239-244
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• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Nuclear Engineering and Technology
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• 제51권3호
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• pp.877-883
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• 2019

Superconducting multi-spoke cavities are outstanding alternative choice for acceleration of heavy ions in medium velocity regimes. Based on the scheme of China ADS, several researches on the superconducting double-spoke cavities were done and two prototype cavities have been developed. In this paper, the RF design, the mechanical design and fabrication considerations of the bare cavity will be described in detail. After Buffered Chemical Polishing and High Pressure Rinsing, one of the prototype cavities was installed into the Vertical Test Stand for high gradient RF testing at 4.2 K. The measurement results of the quality factor as a function of the accelerating field and the maximum surface field will be presented. An accelerating gradient of more than 15 MV/m is achieved during the test, with maximum surface electric field of 58 MV/m, and maximum surface magnetic field of 117 mT.

• Journal of the Microelectronics and Packaging Society
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• 제21권1호
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.

• The korean journal of orthodontics
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• 제29권4호
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• pp.483-490
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• 1999

Interdental enamel stripping is an usual method for correction of abnormal tooth shape and tooth size discrepancy which is one of the etiologic factors of malocclusion. Clinically it Is useful to correct the minor crowding in anterior teeth and posterior occlusion during finishing stage of orthodontic treatment. But this procedure has risks such as irreversible tooth reduction and remaining roughness of enamel surface can accumulate plaque which can evoke periodontal problem. Even if various methods were introduced to minimize the enamel surface roughness, their evaluation was limited in morphologic differences by scanning electronic microscope(SEM). The purpose of this study was to compare the various interdental enamel stripping method by SEM and to quantify the difference of surface roughness by use of Surfcorder SEF-30D(Kosaka Lab. Ltd.) which can measure the roughness of surface. The stripping methods were divided into mechanical and mechanical-chemical method. Air-rotor stripping and separating strip were used for mechanical stripping and $37\%$ phosphoric acid was used for chemical stripping. The enamel surface roughness after mechanical or mechanical-chemical stripping of interproximal surfaces of premolars which were extracted for orthodontic purpose were measured and compared by means of SEM and $Surfcorder^{\circledR}$, the results were as follows. 1. Enamel surface of primary treated by coarse diamond bur and separating strip groups showed highest value of roughness. 2. To compare the primary treated groups between mechanical and mechanical-chemical method, the latter group showed lower value of roughness remarkably. 3. Mechanical stripping groups which were treated both coarse and fine instrument showed lower value of roughness as much as non treated group. 4. The use of Pumice for final polishing did not show significantly smoothening the stripped enamel surface any more.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.112-117
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• 2006

In this paper we present that the effects of polymer adsorption on stabilities and CMP performance of ceria abrasive particles. Characterization of ceria abrasive particles in the presence of poly(vinyl pyrrolidone) (PVP) was performed by the measurements of adsorbed amounts of PVP, average sizes, and the back scattering intensities of the ceria abrasive particles as functions of PVP molecular weight and PVP concentration. The ceria abrasive particles in the presence of PVP were used to polish $SiO_2\;and\;Si_3N_4$ films deposited on Si wafers in order to understand the effect of PVP adsorption on chemical mechanical polishing (CMP) performance, together with ceria abrasive particles without PVP. Adsorption of PVP on the ceria abrasive particles enhanced the stability of ceria abrasive particles due to steric stabilization of the thick adsorbed layer of PVP. Removal rates of the deposited $SiO_2\;and\;Si_3N_4$ films by the ceria abrasive particles in the presence of PVP were much lower than those in the absence of PVP and their magnitudes were decreased with an increase in the concentration of free PVP chains in the dispersion media. This suggests that the CMP performance in the presence of PVP could be mainly controlled by the hydrodynamic interactions between the adsorbed PVP chains and the free ones. Moreover, the molecular weight dependence of PVP on the removal rates of the deposited films was hardly observed. On the other hand, high removal rate selectivity between the deposited films in the presence of PVP was not observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Progress in Superconductivity
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• 제12권2호
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제35D권9호
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.462-462
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• 2009

$CeO_2$는 고체 산화물 연료전지 (SOFC, soild oxide fuel cell)의 전해질 재료와 CMP(Chemical Mechanical Polishing) 슬러리 재료, 자동차의 3원 촉매, gas sensor, UV absorbent등 여러 분야에서 사용되고 있다. 본 연구에서는 위의 활용범위 외에 $CeO_2$의 구조적 안정성과 빠른 $Ce^{3+}/Ce^{4+}$의 전환 특성을 이용하여 lithium ion battery의 anode 재료로서 전기화학적 특성을 알아보고자 실험을 실시하였다. $CeO_2$ 합성에 사용되는 전구체인 cerium carbonate의 형상 및 크기, 비표면적과 같은 물리화학적 특성이 $CeO_2$ 분말의 특성에 직접적인 영향을 주기 때문에 전구체의 합성 단계에서 입자의 특성을 조절하였다. 전구체 합성의 출발원료로 cerium nitrate hexahydrate 와 ammonium carbonate를 사용하였고 반응온도 및 농도 등을 변화시켜 입자의 형상 및 결정상을 fiber형태의 orthorombic $Ce_2O(CO_3)_2{\cdot}H_2O$와 구형의 hexagonal $CeCO_3OH$의 세리아 전구체를 합성하였다. 이를 $300^{\circ}C$에서 30분 동안 하소하여 전구체의 입자형상을 유지하는 cubic $CeO_2$를 합성하고 X-ray diffraction, FE-SEM, micropore physisorption analyzer 분석을 통하여 입자의 결정상과 형상, 비표면적 등을 비교 분석하고 $Li/CeO_2$ couple의 충,방전 용량과 수명특성을 비교 분석하여 $CeO_2$의 전기화학적 특성을 알아보았다.