• Title/Summary/Keyword: Chemical mechanical polishing

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Study on Surface Analysis of TEOS Film by Change of Slurry Temperature in CMP Process (CMP 공정중 TEOS 막의 슬러리 온도 변화에 따른 표면 분석 연구)

  • Ko, Pil-Ju;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.645-646
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    • 2005
  • The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

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The Tribological Behaviors of Mesoporous $SiO_2$ Thin Film Formed by Sol-Gel and Self-Assembly Method (졸겔법과 자가조립법을 통해 제조된 메조포러스 $SiO_2$ 박막의 트라이볼로지 특성)

  • Lee, Young-Ze;Shin, Yun-Ha;Kim, Ji-Hoon;Kim, Ji-Man;Kim, Tae-Sung
    • Tribology and Lubricants
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    • v.23 no.6
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    • pp.298-300
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    • 2007
  • Frictional characteristics of mesoporous $SiO_2$ thin films were evaluated with different pore sizes. The films were manufactured by sol-gel and self-assembly methods to have a porous structure. The pores on the surface may play as the outlet of wear particle and the storage of lubricant so that the surface interactions could be improved. The pores were exposed on the surface by chemical mechanical polishing (CMP) or plasma-etching after forming the porous films. The ball-on-disk tests with mesoporous $SiO_2$ thin films on glass specimen were conducted at sliding speed of 15 rpm and a load of 0.26 N. The results show considerable dependency of friction on pore size of mesoporous $SiO_2$ thin films. The friction coefficient decreased as increasing the pore size. CMP process was very useful to expose the pores on the surface.

Wafer Edge Profile Control for Improvement of Removal Uniformity in Oxide CMP (산화막CMP의 연마균일도 향상을 위한 웨이퍼의 에지형상제어)

  • Choi, Sung-Ha;Jeong, Ho-Bin;Park, Young-Bong;Lee, Ho-Jun;Kim, Hyoung-Jae;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.3
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    • pp.289-294
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    • 2012
  • There are several indicators to represent characteristics of chemical mechanical planarization (CMP) such as material removal rate (MRR), surface quality and removal uniformity on a wafer surface. Especially, the removal uniformity on the wafer edge is one of the most important issues since it gives a significant impact on the yield of chip production on a wafer. Non-uniform removal rate at the wafer edge (edge effect) is mainly induced by a non-uniform pressure from nonuniform pad curvature during CMP process, resulting in edge exclusion which means the region that cannot be made to a chip. For this reason, authors tried to minimize the edge exclusion by using an edge profile control (EPC) ring. The EPC ring is equipped on the polishing head with the wafer to protect a wafer from the edge effect. Experimental results showed that the EPC ring could dramatically minimize the edge exclusion of the wafer. This study shows a possibility to improve the yield of chip production without special design changes of the CMP equipment.

Predicting and Interpreting Quality of CMP Process for Semiconductor Wafers Using Machine Learning (머신러닝을 이용한 반도체 웨이퍼 평탄화 공정품질 예측 및 해석 모형 개발)

  • Ahn, Jeong-Eon;Jung, Jae-Yoon
    • The Journal of Bigdata
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    • v.4 no.2
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    • pp.61-71
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    • 2019
  • Chemical Mechanical Planarization (CMP) process that planarizes semiconductor wafer's surface by polishing is difficult to manage reliably since it is under various chemicals and physical machinery. In CMP process, Material Removal Rate (MRR) is often used for a quality indicator, and it is important to predict MRR in managing CMP process stably. In this study, we introduce prediction models using machine learning techniques of analyzing time-series sensor data collected in CMP process, and the classification models that are used to interpret process quality conditions. In addition, we find meaningful variables affecting process quality and explain process variables' conditions to keep process quality high by analyzing classification result.

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[Retraction]Size measurement and characterization of ceria nanoparticles using asymmetrical flow field-flow fractionation (AsFlFFF)

  • Kim, Kihyun;Choi, Seong-Ho;Lee, Seungho;Kim, Woonjung
    • Analytical Science and Technology
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    • v.32 no.5
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    • pp.173-184
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    • 2019
  • As the size of semiconductors becomes smaller, it is necessary to perform high precision polishing of nanoscale. Ceria, which is generally used as an abrasive, is widely used because of its uniform quality, but its stability is not high because it has a high molecular weight and causes agglomeration and rapid precipitation. Such agglomeration and precipitation causes scratches in the polishing process. Therefore, it is important to accurately analyze the size distribution of ceria particles. In this study, a study was conducted to select dispersants useful for preventing coagulation and sedimentation of ceria. First, a dispersant was synthesized and a ceria slurry was prepared. The defoamer selection experiment was performed in order to remove the air bubbles which may occur in the production of ceria slurry. Dynamic light scattering (DLS) and asymmetrical flow field-flow fractionation (AsFlFFF) were used to determine the size distribution of ceria particles in the slurry. AsFlFFF is a technique for separating nanoparticles based on sequential elution of samples as in chromatography, and is a useful technique for determining the particle size distribution of nanoparticle samples. AsFlFFF was able to confirm the presence of a little quantities of large particles in the vicinity of 300 nm, which DLS can not detect, besides the main distribution in the range of 60-80 nm. AsFlFFF showed better accuracy and precision than DLS for particle size analysis of a little quantities of large particles such as ceria slurry treated in this study.

Planarization technology of thick copper film structure for power supply (전력 소자용 후막 구리 구조물의 평탄화)

  • Joo, Suk-Bae;Jeong, Suk-Hoon;Lee, Hyun-Seop;Kim, Hyoung-Jae;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.523-524
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    • 2007
  • This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

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Investigation of the Relationship Between Dishing and Mechanical Stress During CMP Process (수직하중에 의한 응력이 CMP 공정의 디싱에 미치는 영향)

  • Hyeong Gu Kim;Seung Hyun Kim;Min Woo Kim;Ik-Tae Im
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.2
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    • pp.30-34
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    • 2023
  • Since dishing in the CMP process is a major factor that hinders the uniformity of the semiconductor thin film, many studies have focused this issue to improve the non-uniformity of the film due to dishing. In the metal layer, the dishing mainly occurs in the central part of the metal due to a difference in a selection ratio between the metal and the dielectric, thereby generating a step on the surface of the metal layer. Factors that cause dishing include the shape of the thin film, the chemical reaction of the slurry, thermal deformation, and the rotational speed of the pad and head, and dishing occurs due to complex interactions between them. This study analyzed the stress generated on the metal layer surface in the CMP process using ANSYS software, a commercial structure analysis program. The stress caused by the vertical load applied from the pad was analyzed by changing the area density and line width of the dummy metal. As a result of the analysis, the stress in the active region decreased as the pattern density and line width of the dummy metal increased, and it was verified that it was valid compared with the previous study that studied the dishing according to the dummy pattern density and line width of the metal layer. In conclusion, it was confirmed that there is a relationship between dishing and normal stress.

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Analysis of machining characteristics of thermogravimetric analysis and high-power density electron beam through the development of vaporized amplification sheets according to metal powder (Metal Powder에 따른 증기화 증폭 시트의 개발을 통한 열 중량 분석 및 고출력 전자빔의 가공 특성 분석)

  • Kim, Hyun-Jeong;Jung, Sung-Taek;Lee, Joo-Hyung;Baek, Seung-Yub
    • Design & Manufacturing
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    • v.14 no.1
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    • pp.56-62
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    • 2020
  • An electron beam was used to mainly utilize for polishing, finishing, welding, a lithography process, etc. Due to the high technical level of difficulty of high-power density electron beam, it is difficult to secure related technologies. In this study, research was carried out to improve the machinability by developing the vaporized amplification sheets to realize the electron beam drilling technology. Their vaporized amplification sheets were analyzed by using the measurement of chemical and composition, which is such as TGA, SEM. We analyzed micro-hole processing using a microscope. Also, the thermal characteristics of vaporized amplification sheets are highly significant for applying to high-power density electron beam technique. So, we finished the vaporized amplification sheets according to the process conditions and analyzed it according to the machining conditions of the electron beam. It was confirmed that the effect on the experimental results differs depending on the influence of the metal powder contained in the developed material.

Polishing Characteristics of passivation layer by abrasive particles and slurry chemical in the Metal CMP process (금속 CMP 공정에서 연마제와 슬러리 케미컬에 의한 passivation layer의 연마특성)

  • Park, Chang-Jun;Seo, Yong-Jin;Lee, Kyoung-Jin;Jeong, So-Young;Kim, Sang-Yong;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.45-48
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    • 2003
  • The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

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The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

  • Lin, Paul-Chang;Xu, Jin-Hai;Lu, Hong-Liang;Zhang, David Wei;Li, Pei
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.319-325
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    • 2017
  • Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.