Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Surface Analysis of TEOS Film by Change of Slurry Temperature in CMP Process

CMP 공정중 TEOS 막의 슬러리 온도 변화에 따른 표면 분석 연구

  • Published : 2005.07.07
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Abstract

The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

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