• Title/Summary/Keyword: Chemical mechanical planarization(CMP)

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A Study for Global Planarization of Mutilevel Metal by CMP (Chemical Mechanical Polishing (CMP) 공정을 이용한 Mutilevel Metal 구조의 광역 평탄화에 관한 연구)

  • 김상용;서용진;김태형;이우선;김창일;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1084-1090
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    • 1998
  • As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

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Effect of Citric Acid in Cu Chemical Mechanical Planarization Slurry on Frictional Characteristics and Step Height Reduction of Cu Pattern

  • Lee, Hyunseop
    • Tribology and Lubricants
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    • v.34 no.6
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    • pp.226-234
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    • 2018
  • Copper chemical mechanical planarization (CMP) has become a key process in integrated circuit (IC) technology. The results of copper CMP depend not only on the mechanical abrasion, but also on the slurry chemistry. The slurry used for Cu CMP is known to have greater chemical reactivity than mechanical material removal. The Cu CMP slurry is composed of abrasive particles, an oxidizing agent, a complexing agent, and a corrosion inhibitor. Citric acid can be used as the complexing agent in Cu CMP slurries, and is widely used for post-CMP cleaning. Although many studies have investigated the effect of citric acid on Cu CMP, no studies have yet been conducted on the interfacial friction characteristics and step height reduction in CMP patterns. In this study, the effect of citric acid on the friction characteristics and step height reduction in a copper wafer with varying pattern densities during CMP are investigated. The prepared slurry consists of citric acid ($C_6H_8O_7$), hydrogen peroxide ($H_2O_2$), and colloidal silica. The friction force is found to depend on the concentration of citric acid in the copper CMP slurry. The step heights of the patterns decrease rapidly with decreasing citric acid concentration in the copper CMP slurry. The step height of the copper pattern decreases more slowly in high-density regions than in low-density regions.

Effect of slurry on CMP characteristics of Blanket Wafer (Blanket Wafer의 CMP특성에 Slurry가 미치는 영향)

  • 김경준;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1996.11a
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    • pp.172-176
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    • 1996
  • The rapid structural change of ULSI chip includes minimum features, multilevel interconnection and large diameter wafers. Demands for the advanced chip structure necessitates the development of enhanced deposition, etching and planarization techniques. Planarization refers to a process that make rugged surfaces flat and uniform. One of the emerging technologies for planarization is chemical mechanical polishing(CMP). Chemical and mechanical removal actions occur during CMP, and both appear to be closely interrelated. The purpose of this study is the optimal application of the slurry to the various types of device materials during CMP. We investigates the effect of slurry on CMP characteristics for thermal oxide and sputtered Al blanket wafers. Results from the polishing rate and the uniformity of residual film include mechanical and chemical reactions between several set of slurry and work material.

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A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization (구리 CMP 적용을 위한 산성 콜로이드 실리카를 포함한 준무연마제 슬러리 연구)

  • 김남훈;김상용;서용진;김태형;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.272-277
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    • 2004
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

Planarization of Multi-level metal Structure by Chemical Mechanical Polishing (CMP 공정을 이용한 Multilevel Metal 구조의 평탄화 연구)

  • 김상용;서용진;김태형;이우선;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.456-460
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    • 1997
  • As device sizes are scaled to submicron dimensions, planarization technology becomes increasing1y important, both during device fabrication and during formation of multilevel interconnects and wiring. Chemical Mechanical Polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. This paper is presented the results of CMP process window characterization studies for 0.35 micron process with 6 metal layers.

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Chemical Mechanical Polishing Characteristics with Different Slurry and Pad (슬러리 및 패드 변화에 따른 기계화학적인 연마 특성)

  • 서용진;정소영;김상용
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.441-446
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    • 2003
  • The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

A Study on Machining Characteristic Comparison of Blanket Wafer(TEOS) by CMP and Spin Etching (CMP와 Spin Etching에 의한 Blanket Wafer(TEOS) 가공 특성 비교에 관한 연구)

  • 김도윤;정해도;이은상
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2001.04a
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    • pp.1068-1071
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    • 2001
  • Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).

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Oxide Planarization of Trench Structure using Chemical Mechanical Polishing(CMP) (기계화학적 연마를 이용한 트렌치 구조의 산화막 평탄화)

  • 김철복;김상용;서용진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.10
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    • pp.838-843
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    • 2002
  • Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

A Study on a Wet etching of ILD (Interlayer Dielectric) Film Wafer (습식 에칭에 의한 웨이퍼의 층간 절연막 가공 특성에 관한 연구)

  • 김도윤;김형재;정해도;이은상
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.935-938
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    • 1997
  • Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

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