• Title/Summary/Keyword: Chemical Process

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Planarizaiton of Cu Interconnect using ECMP Process (전기화학 기계적 연마를 이용한 Cu 배선의 평탄화)

  • Jeong, Suk-Hoon;Seo, Heon-Deok;Park, Boum-Young;Park, Jae-Hong;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.213-217
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    • 2007
  • Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

An Empirical Relation between the Plating Process and Accelerator Coverage in Cu Superfilling

  • Cho, Sung-Ki;Kim, Myung-Jun;Koo, Hyo-Chol;Kim, Soo-Kil;Kim, Jae-Jeong
    • Bulletin of the Korean Chemical Society
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    • v.33 no.5
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    • pp.1603-1607
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    • 2012
  • The effects of plating process on the surface coverage of the accelerator were investigated in terms of Cu superfilling for device metallization. When a substrate having 500 nm-wide trench patterns on it was immersed in an electrolyte containing poly (ethylene glycol) (PEG)-chloride ion ($Cl^-$)-bis(3-sulfopropyl) disulfide (SPS) additives without applying deposition potential for such a time of about 100s, voids were generated inside of the electrodeposit. In time-evolved electrochemical analyses, it was observed that the process (immersion without applying potential) in the electrolyte led to the build-up of high initial coverage of SPS-Cl on the surface, resulting in the fast saturation of the coverage. Repeated experiments suggested that the fast saturation of SPS-Cl failed in superfilling while a gradual increase in the SPS-Cl coverage through competition with initially adsorbed PEG-Cl enabled it. Consequently, superfilling was achievable only in the case of applying the plating potential as soon as the substrate is dipped in an electrolyte to prevent rapid accumulation of SPS-Cl on the surface.

Synthesis of Ceria Nanoparticles Using Supercritical Methanol with Various Surface Modifiers (초임계 메탄올을 이용한 표면개질된 세리아 나노입자의 합성)

  • Ahn, Ki Ho;Shin, Nae-Chul;Kim, Minsoo;Youn, Yong-Suk;Hong, Giyoung;Lee, Youn-Woo
    • Korean Chemical Engineering Research
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    • v.50 no.4
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    • pp.678-683
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    • 2012
  • Ceria is one of the most important catalytic materials which can be used in three-way catalysts, waste water treatment, petroleum refining, etc. So far, many methods have been studied to produce ceria nanoparticles. In this study, ceria nanoparticles were prepared via solvothermal synthesis using supercritical methanol in short reaction time using a batch reactor. The size of synthesized ceria nanoparticles in supercritical methanol is 6 nm without capping agent, which is smaller than that made in supercritical water at the same conditions of $400^{\circ}C$ and 30 MPa. Size difference results from density and critical point difference between water and methanol and slow reaction rate at the surface of ceria particles in supercritical methanol which reduces crystal growth rate. Several organic compounds were added to modify the surface of ceria nanoparticles, and in-situ surface modification was confirmed by FT-IR and TGA analysis. Surface modified ceria nanoparticles have excellent dispersibility in organic solvent. Size and shape of surface modified ceria particles can be controlled by adjusting molar ratio of modifier to precursor and selection of modifier.

Process operation improvement methodology based on statistical data analysis (통계적 분석기법을 이용한 공정 운전 향상의 방법)

  • Hwang, Dae-Hee;Ahn, Tae-Jin;Han, Chonghun
    • 제어로봇시스템학회:학술대회논문집
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    • 1997.10a
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    • pp.1516-1519
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    • 1997
  • With disseminationof Distributed Control Systems(DCS), the huge amounts of process operation data could have been available and led to figure out process behaviors better on the statistical basis. Until now, the statistical modeling technology has been susally applied to process monitoring and fault diagnosis. however, it has been also thought that these process information, extracted from statistical analysis, might serve a great opportunity for process operation improvements and process improvements. This paper proposed a general methodolgy for process operation improvements including data analysis, backing up the result of analysis based on the methodology, and the mapping physical physical phenomena to the Principal Components(PC) which is the most distinguished feature in the methodology form traditional statistical analyses. The application of the proposed methodology to the Balst Furnace(BF) process has been presented for details. The BF process is one of the complicated processes, due to the highly nonlinear and correlated behaviors, and so the analysis for the process based on the mathematical modeling has been very difficult. So the statisitical analysis has come forward as a alternative way for the useful analysis. Using the proposed methodology, we could interpret the complicated process, the BF, better than any other mathematical methods and find the direction for process operation improvement. The direction of process operationimprovement, in the BF case, is to increase the fludization and the permeability, while decreasing the effect of tapping operation. These guide directions, with those physical meanings, could save fuel cost and process operator's pressure for proper actions, the better set point changes, in addition to the assistance with the better knowledge of the process. Open to set point change, the BF has a variety of steady state modes. In usual almost chemical processes are under the same situation with the BF in the point of multimode steady states. The proposed methodology focused on the application to the multimode steady state process such as the BF, consequently can be applied to any chemical processes set point changing whether operator intervened or not.

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APC Technique and Fault Detection and Classification System in Semiconductor Manufacturing Process (반도체 공정에서의 APC 기법 및 이상감지 및 분류 시스템)

  • Ha, Dae-Geun;Koo, Jun-Mo;Park, Dam-Dae;Han, Chong-Hun
    • Journal of Institute of Control, Robotics and Systems
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    • v.21 no.9
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    • pp.875-880
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    • 2015
  • Traditional semiconductor process control has been performed through statistical process control techniques in a constant process-recipe conditions. However, the complexity of the interior of the etching apparatus plasma physics, quantitative modeling of process conditions due to the many difficult features constraints apply simple SISO control scheme. The introduction of the Advanced Process Control (APC) as a way to overcome the limits has been using the APC process control methodology run-to-run, wafer-to-wafer, or the yield of the semiconductor manufacturing process to the real-time process control, performance, it is possible to improve production. In addition, it is possible to establish a hierarchical structure of the process control made by the process control unit and associated algorithms and etching apparatus, the process unit, the overall process. In this study, the research focused on the methodology and monitoring improvements in performance needed to consider the process management of future developments in the semiconductor manufacturing process in accordance with the age of the APC analysis in real applications of the semiconductor manufacturing process and process fault diagnosis and control techniques in progress.

Cost-Benefit Analysis for the Accident in Chemical Plants (화학공장 사고에 대한 비용${\cdot}$편익 분석)

  • Jeong Taik-Sang;Yoo Jin-Hwan;Ko Jae-Wook
    • 한국가스학회:학술대회논문집
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    • 2005.10a
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    • pp.49-58
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    • 2005
  • A Cost-Benefit Analysis which would help us to make optical decisions among safety investment alternatives, calculating and comparing costs and benefits for facilities in chemical plants. As well as offering the related information in the decision makings for safety improvement, it promotes on-site safety activities and the efficiency of safety investments The developed Cost-Benefit Analysis will eventually contribute to our efforts in economically justifying the safety investments in chemical plants.

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A Study on the Structural Controllability of Chemical Processes Based on Relative Order Analysis

  • Lee, Byungwoo;Kim, Yoonsik;Chang, Tae-Suk;Yoon, En-Sup
    • 제어로봇시스템학회:학술대회논문집
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    • 1999.10a
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    • pp.53-56
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    • 1999
  • The control performance of a chemical process is determined by process structure as well as the performance of controllers. Therefore, the concept of“controllability”should be introduced in the early design stage. Structural information makes controllability assessment possible by giving insights on the pathways of disturbances in the process. In this study, a simple procedure to evaluate controllability is suggested to screen out design alternatives using relative order analysis and structural decomposition. The effectiveness of the proposed method was validated by comparing the results with the case of dynamical simulation.

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지능 알고리즘을 이용한 스마트 약액 공급 장치

  • Hong Gwang-Jin;Kim Jong-Won;Jo Hyeon-Chan;Kim Gwang-Seon;Kim Du-Yong;Jo Jung-Geun
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2005.05a
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    • pp.157-162
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    • 2005
  • The wafer's size has been increased up to 300mm according as the devices have been integrated sophisticatedly. For this process to make 300mm-wafer, it is required strict level which removes the particulates on the surface of wafer. Therefore we need new type wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is very important to control the temperature and the concentration of chemical wet-stat ion. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical in cleaning process, but also it is difficult to make fit quantity and temperature. We propose new chemical supply system, which overcomes the problems via analysis of fluid and thermal transfer on chemical supply system,

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Effect of Invertase on the Batch Foam Fvactionation of Bromelain

  • D. Micheal Ackermann;Jr., Matthew L. Stedman;Samuel Ko;Ales Prokop;Park, Don-Hee;Robert D. Tanner
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.8 no.3
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    • pp.167-172
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    • 2003
  • Foam fractionation can be used to enrich a hydrophobic protein such as bromelain from an aerated dilute protein solution because the protein foams. On the other hand, a protein such as invertase, which is hydrophilic, is not likely to foam under similar aerated conditions. While a foam fractionation process may not be appropriate for recovering a hydrophilic protein alone, it is of interest to see how that non-foaming protein affects the foaming protein when the two are together in a mixture. The bromelain enrichment, activity and mass recovery were observed as a function of the solution pH in order to explore how invertase can affect the recovery of bromelain in a foam fractionation process.