• Title/Summary/Keyword: Charge sensor

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A Study on Engine Performance Characteristics of a Homogeneous Charge Compression Ignition(HCCI) Engine According to Exhaust Gas Recirculation(EGR) (EGR(배기재순환)에 따른 HCCI (균질혼합압축착화)기관의 엔진성능특성에 관한 연구)

  • Choi, Gyeung-Ho;Han, Sung-Bin;Dibble, Robert W.
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.28 no.7
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    • pp.857-862
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    • 2004
  • HCCI engines take advantage of high compression ratio and heat release rate, they exhibit high efficiency in compression ignition engines. HCCI engines also utilize a lean air/fuel ratio resulting in low emissions of NOx and particulate matter(PM). The objective of this research is to determine the effects of EGR rate on the combustion processes of HCCI. For this purpose, a 4-cylinder, compression ignition engine was converted into a HCCI engine, and a heating device was installed to raise the temperature of the intake air and also to make it more consistent. In addition, a pressure sensor was inserted into each of the cylinders to investigate the differences in characteristics among the cylinders.

Star Detectability Analysis of Daytime Star Sensor (주간 활용 별센서의 별 감지가능성 분석)

  • Nah, Ja-Kyoung;Yi, Yu;Kim, Yong-Ha
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.9
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    • pp.89-96
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    • 2005
  • This paper discusses the daytime atmospheric conditions and the possibility of daytime star detection with the purpose of practical use of the star sensor for daylight navigation. In order to estimate the daytime atmospheric data, we use the standard atmospheric model (LOWTRAN 7), from which atmospheric transmittance and radiance from background sky are calculated. Assuming the star sensor with an optical filter to reduce background radiation, different separation angles between the star sensor and the sun are set up to express the effect of the solar radiation. As considerations of field of view (FOV) of the star sensor, the variation of the sky background radiation and the star density of the detectable star are analyzed. In addition, the integration time to achieve a required signal-to-noise ratio and the number of the radiation-caused electrons of the charge coupled detector(CCD) working as the limit to daylight application of the star sensor are calculated.

RFM for High Resolution Satellite Sensor Modeling (RFM을 이용한 고해상도 인공위성 센서모델링)

  • 조우석;이동구
    • Korean Journal of Remote Sensing
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    • v.18 no.6
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    • pp.337-344
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    • 2002
  • In general, in order to obtain position information from satellite images, satellite sensor model which represents the geometric relationship between sensor and targeted area should be established in the first place. However, it is not simple for modelling pushbroom satellite sensor due to the image capturing process. In recent development of new generation imaging sensors, a generic sensor model, which is applicable to all types of sensors such as frame, pushbroom, whiskbroom, and SAR is in great need to the remote sensing and photogrammetry community. In this paper, the RFM as sensor model was implemented with KOMPSAT EOC and SPOT satellite images and analyzed in cases where the number and distribution of ground control points were varied. The test results of RFM were presented and compared with those of Direct Linear Transformation(DLT).

A Study on the Design of a Beta Ray Sensor Reducing Digital Switching Noise (디지털 스위칭 노이즈를 감소시킨 베타선 센서 설계)

  • Kim, Young-Hee;Jin, Hong-Zhou;Cha, Jin-Sol;Hwang, Chang-Yoon;Lee, Dong-Hyeon;Salman, R.M.;Park, Kyung-Hwan;Kim, Jong-Bum;Ha, Pan-Bong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.5
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    • pp.403-411
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    • 2020
  • Since the analog circuit of the beta ray sensor circuit for the true random number generator and the power and ground line used in the comparator circuit are shared with each other, the power generated by the digital switching of the comparator circuit and the voltage drop at the ground line was the cause of the decreasein the output signal voltage drop at the analog circuit including CSA (Charge Sensitive Amplifier). Therefore, in this paper, the output signal voltage of the analog circuit including the CSAcircuit is reduced by separating the power and ground line used in the comparator circuit, which is the source of digital switching noise, from the power and ground line of the analog circuit. In addition, in the voltage-to-voltage converter circuit that converts VREF (=1.195V) voltage to VREF_VCOM and VREF_VTHR voltage, there was a problem that the VREF_VCOM and VREF_VTHR voltages decrease because the driving current flowing through each current mirror varies due to channel length modulation effect at a high voltage VDD of 5.5V when the drain voltage of the PMOS current mirror is different when driving the IREF through the PMOS current mirror. Therefore, in this paper, since the PMOS diode is added to the PMOS current mirror of the voltage-to-voltage converter circuit, the voltages of VREF_VCOM and VREF_VTHR do not go down at a high voltage of 5.5V.

A Study on the Physical Characteristics of Photoconductors for Photon Counting based X-ray Sensor Application (광계수형 기반의 X선 영상센서 적용을 위한 광도전체 물성 연구)

  • Park, Ji Koon;Noh, Si Cheol;Choi, Il Hong;Jung, Bong Jae;Kang, Sang Sik
    • Journal of the Korean Society of Radiology
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    • v.8 no.7
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    • pp.423-428
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    • 2014
  • Digital X-ray imaging devices using a TFT based flat panel array has been used in medical field. But, recently, lots of research on the photon counting sensor has been reported. In this study, we evaluated the physical properties of the photoconductor by suggesting the standard and testing method for quantitative performance evaluation of photon counting x-ray imaging sensor. First, we measured the leakage current and the sensitivity of photon counting x-ray imaging sensor and we evaluated the characteristic of rising time for determining the signal shaping time. In addition, the set-up study was conducted on the basis of the IEC 62220-1-2 recommendations to define the number of incident photons per unit area. And the efficiency of the charge collection was also evaluated. As a result, the characteristic was measured as $200pA/mm^2$ of the leakage current, $7{\mu}C/cm^2R $ of the X-ray sensitivity, and $0.765{\mu}s$ of the rising time.

세라믹 센서의 현상과 장래동향

  • 박춘배;송민종
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.438-446
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    • 1994
  • 인류는 지금 2차석기시대를 맞이하고 있으며 이 시대는 인공으로 만들어지는 돌인 세라믹이 단순히 용기나 도구로 사용되는 것 이외에 정보화사회에 있어서 기술의 관건이 될 지능소자로서 사용되고 있다. 세라믹은 내열성, 내식성, 내마모성이라는 특성으로 인해 많이 이용되어 왔지만 이러한 특성 이외에도 전자적 기능, 광학기능, 화학기능 등 "두뇌"도 우수한 재료라 할 수 있다. 더구나 세라믹은 인간을 대신하여 감지하는 것이 가능한 각종 센서로서도 폭넓게 이용되고 있다. 인간에 있어서 눈, 코, 귀, 혀, 피부 등 오감이 센서이며, 눈은 물체를 식별하는 것으로 빛을 검출하고 귀는 소리를 듣는 것으로 압력과 음파를 검출하고, 코는 냄새로 가스나 온도를 검출하고, 혀는 맛으로 미각을 검출하고, 피부는 촉각에 의한 압력, 온도, 습도를 검출하며, 인간의 오감에 대응되지 않는 것으로 세라믹 센서는 자기장을 감지할 수 있다. 이와같이 센서는 용도에 따라 수많은 센서가 개발되어 그 종류가 대단히 많기 때문에 모든 센서에 대해서 기술한다는 것은 어렵다. 그러므로 여기서는 센서중에서 기본적인 가스센서와 습도센서에 대해 소개하기로 한다. 소개하기로 한다.

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Preparation of Ru-C Nano-composite Film by MOCVD and Electrode Properties for Oxygen Gas Sensor

  • Kimura, Teiichi;Goto, Takashi
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.358-359
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    • 2006
  • Ru-C nano-composite films were prepared by MOCVD, and their microstructures and their electrode properties for oxygen gas sensors were investigated. Deposited films contained Ru particles of 5-20 nm in diameter dispersed in amorphous C matrix. The AC conductivities associating to the interface charge transfer between Ru-C composite electrode and YSZ electrolyte were 100-1000 times higher than that of conventional paste-Pt electrodes. The emf values of the oxygen gas concentration cell constructed from the nano-composite electrodes and YSZ electrolyte showed the Nernstian theoretical values at low temperatures around 500 K. The response time of the concentration cell was 900 s at 500 K.

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A Design of UHF Sensor using Partial Discharge Measurement in GIS (부분방전 측정용 UHF센서의 설계)

  • Park, K.S.;Kim, J.B.;Song, Y.P.;Kim, D.S.
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.28-30
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    • 2002
  • The PD in GIS leads to a charge transfer and a voltage drop across the discharge area. They cannot be measure directly but we can measure electromagnetic wave made by PD. In generally, compared with VHF band, electromagnetic waves of UHF band have a low noise therefore, we can detect the real defect with several pC in GIS using UHF method. In this paper, the U-slot microstrip patch antenna for measuring PD signal in GIS is presented. the proposed UHF sensor are designed to have large band characteristics and unaffected structure for GIS operation.

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Characteristics of Protein G-modified BioFET

  • Sohn, Young-Soo
    • Journal of Sensor Science and Technology
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    • v.20 no.4
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    • pp.226-229
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    • 2011
  • Label-free detection of biomolecular interactions was performed using BioFET(Biologically sensitive Field-Effect Transistor) and SPR(Surface Plasmon Resonance). Qualitative information on the immobilization of an anti-IgG and antibody-antigen interaction was gained using the SPR analysis system. The BioFET was used to explore the pI value of the protein and to monitor biomolecular interactions which caused an effective charge change at the gate surface resulting in a drain current change. The results show that the BioFET can be a useful monitoring tool for biomolecular interactions and is complimentary to the SPR system.

Adjusting the Sensitivity of an Active Pixel Sensor Using a Gate/Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor-Type Photodetector With a Transfer Gate (전송 게이트가 내장된 Gate/Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor 구조 광 검출기를 이용한 감도 가변형 능동 화소 센서)

  • Jang, Juneyoung;Lee, Jewon;Kwen, Hyeunwoo;Seo, Sang-Ho;Choi, Pyung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.30 no.2
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    • pp.114-118
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    • 2021
  • In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.