• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.588-590
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• 1989

Charge sensitivity and its frequency response characteristics were measured in poled and aged lead zirconate titanate(PZT) ceramics prepared by sintering. Aged PZT has lower charge sensitivity and lower mounted resonance frequency than just poled PZT.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.945-949
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• 1995

In order to investigate the performance of compression-type accelerometer on piezoelectric properties, PZT materials have been studied. The ring-shaped piezoelectric elements were prepared using commercial PZT powders by conventional ceramic process. Their estimated relative dielectric constant, piezoelectric charge constant (d33) and voltage constant (g33) values showed 390∼3400, (90∼593)×10-12 C/N and (19.5∼40.5)×10-3 V-m/N, respectively. The charge sensitivity of accelerometer is proportional to the piezoelectric charge constant value (d33) of PZT, but its voltage sensitivity is related with the piezoelectric voltage constant (g33). Since the mounted resonance frequency and sensitivity are dependent on the seismic mass as well as physical charateristics and size of PZT elements, the suitable considerations between two components are required for accelerometer's design.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.51 no.4
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• pp.183-187
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• 2002

The efficient and rational transmission tariff structure is one of the crucial factors in creation of fair and competitive electricity markets. Transmission charge can be largely categorized into the line usage charge, system reliability charge, access charge and others. Any transmission tariff should be able to reflect these cost components reasonably. This paper suggests an approach amenable to allocating the transmission reliability costs reasonably with reflection of line sensitivity and line outage rate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.291-295
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• 1996

This paper discusses several design factors of a capacitance displacement sensor with a numerical method and several experiments and describes guide lines of the design of this type sensor. We introduce the charge density method for the analysis of this type sensor, which has feasible accuracy and efficiency. The analysis of this type sensor with the charge density method agrees with displacement sensitivity experiments of a circular plate capacitance sensor with the sensor amp based In the charge transfer principle.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.78-88
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• 2017

Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.

• Polymer(Korea)
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• v.25 no.5
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• pp.719-727
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• 2001

Recently it was found that the charge carrier transport properties are significantly enhanced due to effective intermolecular $\pi$-orbital overlapping and low disorder of hopping sites caused by self-organization of liquid crystal molecules. In this study, the xerographic properties of a double-layer photoconductor doped with nematic liquid crystal, 4-pentyl-4'-cyanoterphenyl (5CT), as a charge-carrier transport material to enhance the charge-tarrier mobility were investigated. From the results of measured surface voltage properties for the photoconductor doped with various concentrations of liquid crystal, 5CT, the initial voltage was found to increase with the concentration of 5CT and the dark decay decreased with the concentration of 5CT. The highest sensitivity was obtained at a specific concentration, 40wt% 5CT. The fluorescence behavior of the carrier transport layer (CTL) was also investigated. It was found that the charge-carrier transport properties of the organic photoconductor depend on the charge-carrier transport properties of the complex. The TNF : 5CT (40 wt%) and OXD : 5CT (40 wt%)samples showed the highest sensitivity because the greatest charge transport complex was termed between the charge-carrier transport materials in these samples.

• Nuclear Engineering and Technology
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• v.52 no.7
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• pp.1503-1510
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• 2020

Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al₂O₃) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 10³, 10⁴, and 10⁵ Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.573-578
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• 2004

EED consists of bridgewire, explosive charge, lead pins and metal case. If a firing signal is injected to EED， the explosive charge in EED is initiated by heating of bridgewire. Electromagnetic waves radiated from high power transmitters or radars can also cause unexpected firing of EED. Therefore, EMC design and test requirements for EED in military specifications are established and applied. This report describes the characteristics of RF sensitivity fur a firing fuse which is used fur EMC test instead of a real EED installed in aircraft. RF firing level of the fuse was predicted using transmission line(TL) theory. n sensitivity and RF sensitivity specified in military specifications were measured.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.11
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• pp.110-117
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• 1997

This paper discusses numerically and experimenally several design parameters for the plate- type capacitive displacement sensor. The influenences of shape of this sensor on the sensitivity are numerically analyzed with the charge density method. Using many test sensor plates of different shape for verifing the validity of this method can not guarantee the repetibility of experiments. Therefore we made specially the test sensor plate so that experiments of effects of shape of this sensor on sensitivity can be done with only that plate. Results from these experiments agree well with those from numerical analysis.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.187-190
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• 2005

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.