• 한국정보전자통신기술학회논문지
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• 제9권4호
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• pp.419-427
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• 2016

본 논문에서는 저면적 64bit MTP IP를 설계하였다. 저면적 설계기술로는 MTP cell의 inhibit voltage를 기존의 VPP/3과 VNN/3 전압 대신 모두 0V를 사용하므로 VPPL(=VPP/3) regulator 회로와 VNNL(VNN/3) charge pump 회로를 제거하였다. 그리고 external pad를 이용하여 VPP program voltage를 forcing하므로 VPP charge pump 회로를 제거하였다. 또한 VNN charge pump는 VPP 전압을 이용하여 1-stage negative charge pump 회로로 pumping해서 -VPP의 전압을 공급하도록 설계를 하였다. 설계된 64bit MTP IP size는 $377.585{\mu}m{\times}328.265{\mu}m$(=0.124mm2)이며, DC-DC converter관련 layout size는 기존의 회로 대비 76.4%를 줄였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.311-314
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• 2002

In recent years, various power factor correction(PFC) circuits for the electronic ballasts have been proposed. In this paper, we have studied several passive PFC and compared with their characteristics, used in the electronic ballast for fluorescent. Especially, Improved Valley Fill Circuit (IVF) and the circuit IVF PFC combined with Charge Pumping Capacitors(CPCs) have been reaserched for High Power Factor. In conclusion, we have researched characteristics of Passive PFC and proposed the most effective PFC method.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.473-476
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• 2004

AS supply voltage of DRAM is scaled down, voltage circuit that is stable from external noise is more important. $V_{PP}$ voltage is very important, it is biased to gate of memory cell transistor and possible to read and write without voltage down. It has both high pump gain and high power efficiency therefore charge pump circuit is proposed. The circuit is simulated by 0.18${\mu}m$ memory process and 1.2V supply voltage. Compare to CCTS, it is improved 0.43V of pump gain, $3.06\%$ of power efficiency at 6 stage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.37-40
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• 2004

SONOS를 이용한 전하트랩형 플래시 메모리를 통상의 0.35um CMOS 공정을 이용하여 제작하였으며 그 구조는 소스를 공통(CSL. Common Source Line)으로 사용하는 NOR형으로 하였다. 기존의 공정을 그대로 이용하면서 멀티 비트 동작을 통한 실질적 집적도 향상을 얻을 수 있다면 그 의미가 크다고 하겠다. 따라서 본 연구에서는CSL-NOR형 플래시 구조에서 멀티 비트을 구현하기위한 최적의 프로그램/소거/읽기 전압 조건을 구하여 국소적으로 트랩된 전하의 분포를 전하펌핑 방법을 이용하여 조사하였다. 또한 이 방법을 이용하여 멀티 비트 동작 시 문제점으로 제시된 전하의 측면확산을 측정하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.369-372
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• 2002

To remedy both the degradation and saturation of the output voltages in the modified Dickson pump, a new multistage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94V even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.266-269
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• 1999

Several power factor correction(PFC) circuits are presented to achieve high PF electronic ballast for both voltage-fed and current-fed electronic ballast. The proposed PFC circuits use valley-fill(VF) type DC-link stages modified from the conventional VF circuit to adopt the charge pumping method for PFC operations during the valley intervals. In voltage-fed ballast, charge pump capacitors are connected with the resonant capacitors. In current-fed type, the charge pump capacitors are connected with the additional secondary-side of the power transformer. The measured PF and THD are higher than 0.99 and 15% for all proposed PFC circuits. The lamp current CF is also acceptable in the proposed circuits. The proposed circuit is suitable for implementing cost-effective electronic ballast.

• 전력전자학회논문지
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• 제4권6호
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• pp.515-522
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• 1999

형광등용 전자식 안정기의 개발에 있어서, 최근 선전류 고조파 성분의 제한에 관한 여러 가지 규제를 만족시키기 위해 역률 개선 회로를 부가하는 것이 권장되고 있다. 일반적으로는 부스트 컨버터를 가장 많이 사용하고 있지만 전체 제품의 가격 상승 및 EMI 발생 등의 단점 때문에 설계에 있어서 상당한 제약을 받게 된다. 본 논문에서는 역률 개선을 수동소자로만 이용하여 전압원 및 전류원 방식의 공진형 인버터를 채택하는 형광등용 전자식 안정기를 저가격화, 고역률화하는 것을 목적으로 한다.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2006년도 하계학술발표대회 논문집
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• pp.95-98
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• 2006

Filtration by fibrous filter is one of the Principle methods used for removing pollutant particles in the liquid. Because of the increasing need to protect both human health and valuable devices from exposure to fine particles, filtration has become more important. Filters have been developed with modified surface charge characteristics to capture and adsorb particles by electrokinetic interaction between the filter surface and particles contained in water. The main purposes of this study are to develop and evaluate the performance evaluation of the apparatus for making a positively charged porous filter media and to analyze the surface characteristics of the filter media for capturing negavitely charged contaminants mainly bacteria and virus from water. The experimental apparatus consists of a mixing tank, a vacuum pumping system, a injection nozzle, a roller press and a controller. The filter media is composed of glass fiber(50-750 nm), cellulose($10-20{\mu}m$) and colloidal charge modifier. The characteristics of filter media is analyzed by SEM(Scanning Electron Microscopy), AFM(Atomic Force Microscopy) and quantified by measuring the zeta potential values.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1268-1270
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• 1993

In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.