• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.4
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• pp.419-427
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• 2016

In this paper, a 64b small-area MTP memory IP is designed. A VPPL (=VPP/3) regulator and a VNN (=VNN/3) charge pump are removed since the inhibit voltages of an MTP memory cell are all 0V instead of the conventional voltages of VPP/3 and VNN/3. Also, a VPP charge pump is removed since the VPP program voltage is supplied from an external pad. Furthermore, a VNN charge pump is designed to provide its voltage of -VPP as a one-stage negative charge pump using the VPP voltage. The layout size of the designed 64b MTP memory IP with MagnaChip's $0.18{\mu}m$ BCD process is $377.585{\mu}m{\times}328.265{\mu}m$ (=0.124mm2). Its DC-DC converter related layout size is 76.4 percent smaller than its conventional counterpart.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• Proceedings of the IEEK Conference
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• 2002.06e
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• pp.311-314
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• 2002

In recent years, various power factor correction(PFC) circuits for the electronic ballasts have been proposed. In this paper, we have studied several passive PFC and compared with their characteristics, used in the electronic ballast for fluorescent. Especially, Improved Valley Fill Circuit (IVF) and the circuit IVF PFC combined with Charge Pumping Capacitors(CPCs) have been reaserched for High Power Factor. In conclusion, we have researched characteristics of Passive PFC and proposed the most effective PFC method.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.473-476
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• 2004

AS supply voltage of DRAM is scaled down, voltage circuit that is stable from external noise is more important. $V_{PP}$ voltage is very important, it is biased to gate of memory cell transistor and possible to read and write without voltage down. It has both high pump gain and high power efficiency therefore charge pump circuit is proposed. The circuit is simulated by 0.18${\mu}m$ memory process and 1.2V supply voltage. Compare to CCTS, it is improved 0.43V of pump gain, $3.06\%$ of power efficiency at 6 stage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.37-40
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• 2004

SONOS를 이용한 전하트랩형 플래시 메모리를 통상의 0.35um CMOS 공정을 이용하여 제작하였으며 그 구조는 소스를 공통(CSL. Common Source Line)으로 사용하는 NOR형으로 하였다. 기존의 공정을 그대로 이용하면서 멀티 비트 동작을 통한 실질적 집적도 향상을 얻을 수 있다면 그 의미가 크다고 하겠다. 따라서 본 연구에서는CSL-NOR형 플래시 구조에서 멀티 비트을 구현하기위한 최적의 프로그램/소거/읽기 전압 조건을 구하여 국소적으로 트랩된 전하의 분포를 전하펌핑 방법을 이용하여 조사하였다. 또한 이 방법을 이용하여 멀티 비트 동작 시 문제점으로 제시된 전하의 측면확산을 측정하였다.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.369-372
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• 2002

To remedy both the degradation and saturation of the output voltages in the modified Dickson pump, a new multistage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94V even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.266-269
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• 1999

Several power factor correction(PFC) circuits are presented to achieve high PF electronic ballast for both voltage-fed and current-fed electronic ballast. The proposed PFC circuits use valley-fill(VF) type DC-link stages modified from the conventional VF circuit to adopt the charge pumping method for PFC operations during the valley intervals. In voltage-fed ballast, charge pump capacitors are connected with the resonant capacitors. In current-fed type, the charge pump capacitors are connected with the additional secondary-side of the power transformer. The measured PF and THD are higher than 0.99 and 15% for all proposed PFC circuits. The lamp current CF is also acceptable in the proposed circuits. The proposed circuit is suitable for implementing cost-effective electronic ballast.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.6
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• pp.515-522
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• 1999

Several power factor correction(PFC) circuits are presented to achieve high PF electronic ballast for both v voltage-fed and current-f,어 ek'Ctronic ballast. The proposed PFC circuits use valley-fil[(VF) type DClink s stages modified from the conventional VF circuit to adopt the charge pumping method for PFC operations d during the valley intervals. In voltage-fed ballast, charge pump capacitors are connected with the resonant c capaCltor In current-fed type, the charge pump capacitors are connc'Ctc'Cl with the additional second따y-side of t the power transformer. The measured PF is higher than 0.99 and THD is about 10% for all proposed PFC c circuits. The lamp current CF is also acceptable in the proposed circuits. The proposed circuit is suitable for i implementing cost longrightarroweffective electronic ballast.

• Proceedings of the SAREK Conference
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• 2006.06a
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• pp.95-98
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• 2006

Filtration by fibrous filter is one of the Principle methods used for removing pollutant particles in the liquid. Because of the increasing need to protect both human health and valuable devices from exposure to fine particles, filtration has become more important. Filters have been developed with modified surface charge characteristics to capture and adsorb particles by electrokinetic interaction between the filter surface and particles contained in water. The main purposes of this study are to develop and evaluate the performance evaluation of the apparatus for making a positively charged porous filter media and to analyze the surface characteristics of the filter media for capturing negavitely charged contaminants mainly bacteria and virus from water. The experimental apparatus consists of a mixing tank, a vacuum pumping system, a injection nozzle, a roller press and a controller. The filter media is composed of glass fiber(50-750 nm), cellulose($10-20{\mu}m$) and colloidal charge modifier. The characteristics of filter media is analyzed by SEM(Scanning Electron Microscopy), AFM(Atomic Force Microscopy) and quantified by measuring the zeta potential values.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1268-1270
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• 1993

In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.