• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.285-295
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• 2021

The inverse spinel Cobalt ferrite (CoFe₂O₄, CFO) is considered to be a promising alternative to commercial graphite anodes for lithium ion batteries (LIBs). However, the further development of CFO is limited by its unstable structure during battery cycling and low electrical conductivity. In an effort to address the challenge, we construct three-dimensional hierarchical flower-like CFO nanoclusters (CFO NCs)-decorated carbonized cotton carbon fiber (CFO NCs/CCF) composite. This structure is consisted of microfibers and nanoflower cluster composited of CFO nanoparticle, in which CCF can be used as a long-range conductive matrix, while flower-like CFO NCs can provide abundant active sites, large electrode/electrolyte interface, short lithium ion diffusion path, and alleviated structural stress. As anode materials in LIBs, the flower-like CFO NCs/CCF exhibits excellent electrochemical performance. After 100 cycles at a current density of 0.3 A g^-1, the CFO NCs/CCF delivers a discharge/charge capacity of 1008/990 mAh g^-1. Even at a high current density of 15 A g^-1, it still maintains a charge/discharge capacity of 362/361 mAh g^-1.

• Journal of the Korean Chemical Society
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• v.67 no.5
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• pp.333-338
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• 2023

In this study, the H₂O reaction with SiO clusters was investigated using ab initio Monte Carlo simulations and density functional theory calculations. Three chemistry models, PBE1/DGDZVP (Model 1), PBE1/DGDZVP (Si atom), and aug-cc-pVDZ (O and H atoms), (Model 2) and PBE1/aug-cc-pVDZ (Model 3), were used. The average bond lengths, as well as the relative and reaction energies, were calculated using Models 1, 2, and 3. The average bond lengths of Si-O and O-H are 1.67-1.75 Å and 0.96-0.97 Å, respectively, using Models 1, 2, and 3. The most stable structures were formed by the H transfer from an H₂O molecule except for Si₃O₃-H₂O-1 cluster. The Si₃O₃ cluster with H₂O exhibited the lowest reaction energy. In addition, the Bader charge distributions of the Si_nO_n and (SiO)_n-H₂O clusters with n = 1-7 were calculated using Model 1. We determined that the reaction sites between H₂O and the SiO clusters possessed the highest fraction of electrons.

• Journal of the Korean Solar Energy Society
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• v.24 no.4
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• pp.11-18
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• 2004

A solar concentrator, named KIERDISH II, was built at KIER in order to investigate the feasibility of high temperature solar energy application system. The constructed concentrator is a dish type solar concentrator with a focal length of 4.68m and a diameter of 7.9m. To successfully operate KIERDISH II, optimal design of the absorber is very important and flux density distribution has to be known. The focal flux density distribution on the receiver was measured. We have observed the shape and size of flux images and evaluated percent power within radius. Flux density distribution is usually measured by a CCD(charge coupled device) camera and a radiometer. In this paper we present a flux mapping method to estimate the characteristic features of the flux density distribution in the focal region of solar concentrator. The minimum radius of receiver is found to be 0.15m and approximately 90% of the incident radiation is intercepted by receiver aperture.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.241-241
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• 2010

New non-volatile memory with high density and high work-function metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of MND capacitor were evaluated. In this work, nano-dot layer of FePt with high density and high work-function (~5.2eV) was fabricated as a charge storage site in non-volatile memory, and its electrical characteristics were evaluated for the possibility of non-volatile memory in view of cell operation by Fowler-Nordheim (FN)-tunneling. Here, nano-dot FePt layer was controlled as a uniform single layer with dot size of under ~ 2nm and dot density of ${\sim}\;1.2{\times}10^{13}/cm^2$. Electrical measurements of MOS structure with FePt nano-dot layer shows threshold voltage window of ~ 6V using FN programming and erasing, which is satisfied with operation of the non-volatile memory. Furthermore, this structure provides better data retention characteristics compared to other metal dot materials with the similar dot density in our experiments. From these results, it is expected that this non-volatile memory using FePt nano-dot layer with high dot density and high work-function can be one of candidate structures for the future non-volatile memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.119-132
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• 2024

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.50-50
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• 1994

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

• Journal of IKEEE
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• v.18 no.4
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• pp.620-624
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• 2014

In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.33-40
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• 2020

We present a new and facile design of a high-performance Li-S cell by integrating a Li₂S-impregnated glass fiber separator together with a common sulfur cathode. We find that a considerable amount of Li₂S is consumed amidst the first charge, and most of Li₂S disappears at the end of the second charge. During the charge process, additional sulfur material is formed and contributes to a significant enhancement of the discharge capacity (~1400 mAh/g), compared with a control cell (~1260 mAh/g) without Li₂S. Moreover, the Li₂S containing cell exhibits much higher cycling stability (a 31% increase from ~840 to ~1100 mAh/g in the 100th cycle) and rate capability (a 30% increase from ~580 to ~750 mAh/g at 2 C) than the control cell. Our results indicate that adopting Li₂S-containing separator is highly effective to improving the electrochemical performances of Li-S cells.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1060-1062
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• 1999

Pulsed Nd:YAG laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. And the parallel mesh is added to increase laser output power. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition, we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the parallel mesh and the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 10pps to 110pps by the step of 20pps at 1000V and 1200V, it is found that the laser efficiency decreases but the laser output power increases about 5W at each step.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2204-2206
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• 1999

Pulsed Nd:YAC laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition. we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 30pps to 120pps by the step of 30pps at 1200V, it is found that the laser efficiency decreases but the laser output power increases about 6W at each step.