• 제목/요약/키워드: Charge Depletion

검색결과 83건 처리시간 0.025초

p형 GaP 반도체 계면의 광효과 (Photoeffects at p-GaP Semiconductor Interfaces)

  • Chun, Jang-Ho
    • 대한전자공학회논문지
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    • 제26권10호
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    • pp.1528-1534
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    • 1989
  • Photoeffects at the p-GaP semiconductor/CsNO3 electrolyte interface were investigated in terms of their current-voltage characteristics. The photoeffects at the semiconductor-electrolyte interfaces and their photocurrent variations are verified using Ar ion laser and continuous cyclic voltammetric methods. The mechanism of charge transfer at the photogeneration in the depletion layer rather than the photodecomposition of the p-GaP semiconductor electrode surface and/or the water photoelectrolysis. The adsorption of Cs+ ions at the interface is physical adsorption.

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N 버퍽층을 갖는 수퍼접합 LDMOS (Super Junction LDMOS with N-Buffer Layer)

  • 박일용
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권2호
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    • pp.72-75
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    • 2006
  • A CMOS compatible Super Junction LDMOS (SJ-LDMOS) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and P-substrate to achieve global charge balance between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on-resistance, and reduced sensitivity to doping imbalance in the pillars.

The effect of surface charge balance on thermodynamic stability and kinetics of refolding of firefly luciferase

  • Khalifeh, Khosrow;Ranjbar, Bijan;Alipour, Bagher Said;Hosseinkhani, Saman
    • BMB Reports
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    • 제44권2호
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    • pp.102-106
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    • 2011
  • Thermodynamic stability and refolding kinetics of firefly luciferase and three representative mutants with depletion of negative charge on a flexible loop via substitution of Glu by Arg (ER mutant) or Lys (EK mutant) as well as insertion of another Arg in ER mutants (ERR mutant) was investigated. According to thermodynamic studies, structural stability of ERR and ER mutants are enhanced compared to WT protein, whereas, these mutants become prone to aggregation at higher temperatures. Accordingly, it was concluded that enhanced structural stability of mutants depends on more compactness of folded state, whereas aggregation at higher temperatures in mutants is due to weakening of intermolecular repulsive electrostatic interactions and increase of intermolecular hydrophobic interactions. Kinetic results indicate that early events of protein folding are accelerated in mutants.

플러그인 하이브리드 전기자동차의 스마트 충전에 관한 연구 (Study on the Smart Charging for Plug-in Hybrid Electric Vehicle)

  • 노철우;김민수
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2008년도 추계학술대회 논문집
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    • pp.349-352
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    • 2008
  • The most concerning issue in these days is the energy crisis by increasing threat of global warming and depletion of natural resources. In the situations, the Plug-in Hybrid Electric Vehicle (PHEV) is drawing attention from many countries for the next generation's car which has higher fuel efficiency and lower environmental impact. This paper presents simulation results about the limit capacity of central power-grid which doesn't have enough surplus electric power for charging PHEVs. Therefore, this paper also presents a smart charging system that can charge the PHEVs with a function of distributing demands of charging. The smart charging system is an agent facility between the government and consumer, which can recommend the best time to charge the battery of PHEVs by the lowest energy cost. This function of choosing time-slots is the technical system for the government which wants to control the consumption rate of electric power for PHEVs. Finally, this paper presents the economic feasibility of PHEVs from the two kinds of price system, midnight electric price and home electric price.

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RTN에 의해 제작된 MOS 소자의 C-V 특성 (C-V Characteristics of MOS Devices by Rapid Thermal Nitridation(RTN))

  • 장의구;최원은;윤돈영;이오성;김상용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.785-787
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    • 1988
  • The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

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An Experimental Study on the Performance of $CO_2$ Air-conditioning Cycle Equipped with an Ejector

  • Kim, Mo-Se;Lee, Jae-Seung;Kim, Min-Soo
    • International Journal of Air-Conditioning and Refrigeration
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    • 제17권3호
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    • pp.100-106
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    • 2009
  • As an effort to prevent environmental problems caused by ozone depletion and global warming, alternative refrigerants are being developed, and one of the candidates is carbon dioxide. To overcome slightly low efficiency of $CO_2$ refrigeration system, air-conditioning cycle using an ejector was suggested. Ejector compensates throttling loss in an expansion device by reducing compression work. In this study, the ejector refrigeration cycle using $CO_2$ as a refrigerant is investigated to understand the effect of the mixing section diameter and refrigerant charge amount on the performance. If mixing section diameter is too large or too small, either cases show low performance. The optimum refrigerant charge amount which gives the best performance is found for standard operating conditions. The air-conditioning cycle was analyzed for several operating conditions.

Physics-based Algorithm Implementation for Characterization of Gate-dielectric Engineered MOSFETs including Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권3호
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    • pp.159-167
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    • 2005
  • Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

입자 퇴적이 승용차용 정전 필터의 미세 입자 포집 특성에 미치는 영향 (Effect of Particle Loading on the Collection Performance of an Electret Cabin Air Filter for Submicron Particles)

  • 지준호;강석훈;황정호;배귀남
    • 대한기계학회논문집B
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    • 제26권8호
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    • pp.1102-1114
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    • 2002
  • An electret filter is composed of permanently charged electret fibers and is widely used in applications requiring high collection efficiency and low-pressure drop. In this work, the collection efficiency of the filter media used in manufacturing cabin air filters was investigated by using poly-disperse particles when submicron particles were loaded. Long-term experiments were conducted by applying two different charging states, which were spray electrification and charge equilibrium by bipolar ionization. In order to investigate the effect of particle loading in filter media, NaCl particles were generated from 0.1% and 1% solutions by an atomizer. Liquid DOS particles were used to evaluate the effect of liquid particles on the collection efficiency of an electret filter. The results show significant effect of charge amount and size distribution of loading particles on the collection performance of a filter media in submicron region. Smaller particles loaded in electret fibers cause a more rapid degradation in collection efficiency and have lower minimum efficiency with time. The pressure drop of a filter media do rarely increase when the collection efficiency decreases to the minimum value. For the larger particles charged by spray electrification, which have charge amounts more than that of Boltzmann equilibrium charge distribution, the pressure drop of a filter media slowly increases in comparison with that of equilibrium charged particles. For DOS particles it is shown that the charging level of an electret filter severely decreases and the collection efficiency is below 10% in some particle size range.

Silicon-oxide-nitride-oxide-silicon구조를 가진 전하포획 플래시 메모리 소자의 Slicon-on-insulator 기판의 절연층 깊이에 따른 전기적 특성

  • 황재우;김경원;유주형;김태환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.229-229
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    • 2011
  • 부유 게이트 Floating gate (FG) 플래시 메모리 소자의 단점을 개선하기 위해 전하 포획 층에 전하를 저장하는 전하 포획 플래시 메모리 Charge trap flash (CTF)소자에 대한 연구가 활발히 진행되고 있다. CTF소자는 FG플래시 메모리 소자에 비해 비례축소가 용이하고 긴 retention time을 가지며, 낮은 구동 전압을 사용하는 장점을 가지고 있다. CTF 소자에서 비례축소에 따라 단채널 효과와 펀치-쓰루 현상이 증가하는 문제점이 있다.본 연구에서는 CTF 단채널 효과와 펀치-쓰루 현상을 감소시키기 위한 방법으로 silicon-on-insulator (SOI) 기판을 사용하였으며 SOI기판에서 절연층의 깊이에 따른 전기적 특성을 고찰하였다. silicon-oxide-nitride-oxide-silicon(SONOS) 구조를 가진 CTF 메모리 소자를 사용하여 절연층의 깊이 변화에 따른 subthreshold swing특성, 쓰기-지우기 동작 특성을 TCAD 시뮬레이션 툴인 Sentaurus를 사용하여 조사하였다. 소스와 드레인의 junction depth는 20 nm 사용하였고, 절연층의 깊이는 5 nm~25 nm까지 변화하면서 절연층의 깊이가 20 nm이하인 fully depletion 소자에 비해, 절연층의 깊이가 25 nm인 소자는 partially depletion으로 인해서 드레인 전류 레벨이 낮아지고 subthreshold swing값이 증가하는 현상이 나타났다. 절연층의 깊이가 너무 얕을 경우, 채널 형성의 어려움으로 인해 subthreshold swing과 드레인 전류 레벨의 전기적성질이 SOI기판을 사용하지 않았을 경우보다 떨어지는 경향을 보였다. 절연층의 깊이가 17.5 nm인 경우, CTF소자의 subthreshold swing과 드레인 전류 레벨이 가장 좋은 특성을 보였다.

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반도체 접합계면이 가스이온화에 따라 극성이 달라지는 원인 (Dependance of Ionic Polarity in Semiconductor Junction Interface)

  • 오데레사
    • 한국산학기술학회논문지
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    • 제19권6호
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    • pp.709-714
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    • 2018
  • 반도체소자의 접합특성에 따라서 분극의 특성이 달라지는 원인을 조사하였다. 반도체소자의 접합특성은 최종적인 반도체소자의 효율과 관련되기 때문에 중요한 요소이며, 효율을 높이기 위해서는 반도체접합 특성을 이해하는 것은 매우 중요하다. 다양한 성질의 접합을 얻기위하여 n형의 실리콘 위에 절연물질인 carbon doped silicon oxide (SiOC) 박막을 증착하였으며, 아르곤 (Ar) 유량에 따라서 반도체기판의 특성이 달라지는 것을 확인하였다. 전도체인 tin doped zinc oxide (ZTO) 박막을 절연체인 SiOC 위에 증착하여 소자의 전도성을 살펴보았다. SiOC 박막의 특성은 플라즈마에 의하여 이온화현상이 일어날 때 Ar 유량에 따라서 이온화되는 경향이 달라지면서 반도체 계면에서의 공핍현상이 달라졌으며, 공핍층 형성이 많이 일어나는 곳에서 쇼키접합 특성이 잘 형성되는 것을 확인하였다. 아르곤 가스의 유량이 많은 경우 이온화 반응이 많이 일어나고 따라서 접합면에서 전자 홀쌍의 재결합반응에 의하여 전하들이 없어지게 되면 절연특성이 좋아지고 공핍층의 전위장벽이 증가되며, 쇼키접합의 형성이 유리해졌다. 쇼키접합이 잘 이루어지는 SiOC 박막에서 ZTO를 증착하였을 때 SiOC와 ZTO 사이의 계면에서 전하들이 재결합되면서 전기적으로 안정된 ZTO 박막을 형성하고, ZTO의 전도성이 증가되었다. 두께가 얇은 반도체소자에서 흐르는 낮은 전류를 감지하기 위해서는 쇼키접합이 이루어져야 하며, 낮은 전류만으로도 전기신호의 품질이 우수해지고 또한 채널층인 ZTO 박막에서의 전류의 발생도 많아지는 것을 확인하였다.