• Journal of Electrical Engineering and Technology
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• 제9권3호
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• pp.843-847
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• 2014

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.184-187
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• 2009

In this paper, we study effect of charge balance on performance of blue phosphorescent organic light emitting diodes (OLEDs). Charge balance determines the location of recombination zone in the OLEDs. By tuning the charge balance in iridium (III) bis[(4,6-difluorophenyl)-pyridinate-N,C2']picolinate (FIrpic) based blue phosphorescent organic light-emitting devices (PHOLEDs) with a high mobility and high triplet energy electron transporting material, we were able to achieve a high current efficiency of 60 cd/A which is a 3X improvement over previous devices with 3,5'-N,N'-dicarbazole-benzene (mCP) host.

• Journal of Electrical Engineering and Technology
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• 제9권3호
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• 전기전자학회논문지
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• 제25권2호
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• pp.356-361
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• 2021

파워 소자의 트레이드오프 현상을 최소화하기 위해 제시된 구조가 Super Junction 구조이다. Super Junction은 기존의 많이 사용하던 기본 구조 대비 1/5 정도의 낮은 온 저항(Ron) 특성을 가질 수 있다. Super Junction 구조의 공정 방법으로 Multi-Epi 공정과 Deep-Trench 공정 방법이 있다. Deep-Trench 공정은 실리콘 기판 상면에 깊은 트렌치 공정을 통하여 그안에 불순물이 도핑 되어 있는 폴리실리콘을 매립하여 P-Pillar를 형성 시키는 공정 방법이라 매립하는 과정에서 결함이 형성되기 쉬워서 비교적 어려운 제조 방법으로 알려져 있다. 하지만 비교적 Deep-Trench 공정으로 만들어진 구조가 낮은 온저항과 높은 항복 전압을 형성하여 좋은 효율을 보인다. 본 논문에서는 공정상의 새로운 방법을 제시하고, Charge Balance 이론을 접목시킨 구조를 설계하였다.

• 전기전자학회논문지
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• 제17권3호
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• pp.360-364
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• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• Journal of Power Electronics
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• 제11권6호
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• pp.811-818
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• 2011

Modulation strategies for multilevel inverters have typically focused on synthesizing a desired set of sinusoidal voltage waveforms using a fixed number of dc voltage sources. This makes the average power drawn from different dc voltage sources unequal and time varying. Therefore, the dc voltage sources are unregulated and require that corrective control action be incorporated. In this paper, first two new selections are proposed for determining the dc voltage sources values for asymmetric cascaded multilevel inverters. Then two modulation strategies are proposed for the dc power balancing of these types of multilevel inverters. Using the charge balance control methods, the power drawn from all of the dc sources are balanced except for the dc source used in the first H-bridge. The proposed control methods are validated by simulation and experimental results on a single-phase 21-level inverter.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권1호
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• pp.34-41
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• 1999

A three-level ZCT(Zero Current Transition) IGBT inverter is presented for high power IGBT inverters. The concept of ZCT for the conventional boost converter is extended to the three-level inverter. Moreover, in order to improve the reliability of inverter, midpoint charge balance problem of the three-level inverter is analyzed with respect 150kw, 20kHz prototype are presented to verify the principle of ZCT Operation.

• 전기전자학회논문지
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• 제27권1호
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• pp.30-37
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• 2023

양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.82.2-82.2
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• 2011

A channel design which is closely related with the mass transport overpotential is one of the most important procedures to optimize the whole fuel cell performance. In this study, three dimensional results of a numerical study for gas distribution in channels of a molten carbonate fuel cell (MCFC) unit cell for a 1kW class stack was presented. The relationship between the fuel and air distribution in the anode and cathode channels of the unit cell and the electric performance was observed. A charge balance model in the electrodes and the electrolyte coupled with a heat transfer model and a fluid flow model in the porous electrodes and the channels was solved for the mass, momentum, energy, species and charge conservation. The electronic and ionic charge balance in the anode and cathode current feeders, the electrolyte and GDEs were solved for using Ohm's law, while Butler-Volmer charge transfer kinetics described the charge transfer current density. The material transport was described by the diffusion and convection equations and Navier-Stokes equations govern the flow in the open channel. It was assumed that heat is produced by the electrochemical reactions and joule heating due to the electrical currents.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1103-1107
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• 2007

Highly efficient organic electroluminescent devices (OLEDs) based on 4,7- diphenyl-1, 10- phenanthroline (BPhen) as the electron transport layer (ETL), tris (8-hydroxyquinoline) aluminum ($Alq_3$) as the emission layer (EML) and N,$\acute{N}$-bis-[1-naphthy(-N,$\acute{N}$diphenyl-1,1´-biphenyl-4,4´-diamine)] (NPB) as the hole transport layer (HTL) were developed. The typical device structure was glass substrate/ ITO/ NPB/$Alq_3$/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of $5\;{\times}\;10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of $1361\;cd/m^2$ at a current density of $20\;mA/cm^2$. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.