Enhancement of On-Resistance Characteristics Using Charge Balance Analysis Modulation in a Trench Filling Super Junction MOSFET |
Geum, Jongmin
(Dept. of Electrical Engineering, Korea University)
Jung, Eun Sik (Maple Semiconductor Co.) Kim, Yong Tae (Korea Institute of Science and Technology) Kang, Ey Goo (Dept. of Photovoltaic Engineering, Far East University) Sung, Man Young (Dept. of Electrical Engineering, Korea University) |
1 | H. W. Lee, E. S. Jung, R. Oh, and M. Y. Sung, "Study on Design of 60V TDMOSFET for protection circuit Module", J.KIEEME, vol.25, No.5, pp.340-344 |
2 | Fujihira, T., "Simulated superior performances of semiconductor superjunction devices", Proc. of the ISPSD'98, Kyoto, 1998, pp. 423-426 |
3 | S. S. Kyoung, J. S. Lee, S. H. Kwak, E. G. Kang and M. Y. Sung, "A Novel Trench IGBT with a Deep P+ Layer beneath the Trench Emitter", IEEE Electron Device, vol.30, No.1, pp.82-84 |
4 | J. S. Lee, E. G. Kang, and M. Y. Sung, "Improvement of electrical characteristics of vertical NPT trench gate IGBT using trench emitter electrode", J.KIEEME, vol.2, no.5, pp.403, 2007 |
5 | H. Ninomiya, Y. Miura and K Kobayashi, "Ultra-low On-resistance 60-100 V Superjunction UMOSFETs Fabricated by multiple Ion-Implantation", Proc. ISPSD, pp.177-180, 2004 |
6 | Pravin N. Kondekar, "Static Off state and Conduction State Charge Imbalance in the Superjunction Power MOSFET", TENCON Vol. 4(2003), pp.1455-1458 |
7 | T.Minato, T.Nitta, A.Uenisi, M.Yanao, M.Harada and S. Hine,"Which is cooler, Trench or Multi-Epitaxy?" Proc. ISPSD2000(2000), pp73. |
8 | S. Iwamoto, K. Takahashi, H. Kuribayashi, S. Wakimoto, K. Mochizuki, and H. Nakazawa, "Above 500V Class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth", Proceedings. ISPSD'05. The 17th International Symposium on, pp. 31-34. |
9 | J. S. Lee, E. G. Kang, and M.Y. Sung, "Shielding region effects on a trench gate IGBT", Microelectron. J., vol. 39, no. 1, pp. 57-62, 2008 DOI ScienceOn |