• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.843-847
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• 2014

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.184-187
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• 2009

In this paper, we study effect of charge balance on performance of blue phosphorescent organic light emitting diodes (OLEDs). Charge balance determines the location of recombination zone in the OLEDs. By tuning the charge balance in iridium (III) bis[(4,6-difluorophenyl)-pyridinate-N,C2']picolinate (FIrpic) based blue phosphorescent organic light-emitting devices (PHOLEDs) with a high mobility and high triplet energy electron transporting material, we were able to achieve a high current efficiency of 60 cd/A which is a 3X improvement over previous devices with 3,5'-N,N'-dicarbazole-benzene (mCP) host.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• Journal of IKEEE
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• v.25 no.2
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• pp.356-361
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• 2021

Super Junction structure is the proposed structure to minimize the Trade-off phenomenon of power devices. Super Junction can have On-resistance(Ron) characteristics as less as five times than conventional structure. There are process methods that Multi-Epi and Deep-Trench of Super Junction structure. The reason for this is that Deep-Trench process is known to be a relatively difficult manufacturing method because it is easy to form a P-Pillar by burying impurities on top of a silicon substrate through a Deep-Trench process. However, the structure created by the Deep-Trench process has low On-resistance and high breakdown voltage, showing better efficiency. In this paper, we suggested a novel method in the process and designed structure with Charge Balance theory.

• Journal of IKEEE
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• v.17 no.3
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• pp.360-364
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• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• Journal of Power Electronics
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• v.11 no.6
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• pp.811-818
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• 2011

Modulation strategies for multilevel inverters have typically focused on synthesizing a desired set of sinusoidal voltage waveforms using a fixed number of dc voltage sources. This makes the average power drawn from different dc voltage sources unequal and time varying. Therefore, the dc voltage sources are unregulated and require that corrective control action be incorporated. In this paper, first two new selections are proposed for determining the dc voltage sources values for asymmetric cascaded multilevel inverters. Then two modulation strategies are proposed for the dc power balancing of these types of multilevel inverters. Using the charge balance control methods, the power drawn from all of the dc sources are balanced except for the dc source used in the first H-bridge. The proposed control methods are validated by simulation and experimental results on a single-phase 21-level inverter.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.1
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• pp.34-41
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• 1999

A three-level ZCT(Zero Current Transition) IGBT inverter is presented for high power IGBT inverters. The concept of ZCT for the conventional boost converter is extended to the three-level inverter. Moreover, in order to improve the reliability of inverter, midpoint charge balance problem of the three-level inverter is analyzed with respect 150kw, 20kHz prototype are presented to verify the principle of ZCT Operation.

• Journal of IKEEE
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• v.27 no.1
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• pp.30-37
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• 2023

To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.82.2-82.2
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• 2011

A channel design which is closely related with the mass transport overpotential is one of the most important procedures to optimize the whole fuel cell performance. In this study, three dimensional results of a numerical study for gas distribution in channels of a molten carbonate fuel cell (MCFC) unit cell for a 1kW class stack was presented. The relationship between the fuel and air distribution in the anode and cathode channels of the unit cell and the electric performance was observed. A charge balance model in the electrodes and the electrolyte coupled with a heat transfer model and a fluid flow model in the porous electrodes and the channels was solved for the mass, momentum, energy, species and charge conservation. The electronic and ionic charge balance in the anode and cathode current feeders, the electrolyte and GDEs were solved for using Ohm's law, while Butler-Volmer charge transfer kinetics described the charge transfer current density. The material transport was described by the diffusion and convection equations and Navier-Stokes equations govern the flow in the open channel. It was assumed that heat is produced by the electrochemical reactions and joule heating due to the electrical currents.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1103-1107
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• 2007

Highly efficient organic electroluminescent devices (OLEDs) based on 4,7- diphenyl-1, 10- phenanthroline (BPhen) as the electron transport layer (ETL), tris (8-hydroxyquinoline) aluminum ($Alq_3$) as the emission layer (EML) and N,$\acute{N}$-bis-[1-naphthy(-N,$\acute{N}$diphenyl-1,1´-biphenyl-4,4´-diamine)] (NPB) as the hole transport layer (HTL) were developed. The typical device structure was glass substrate/ ITO/ NPB/$Alq_3$/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of $5\;{\times}\;10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of $1361\;cd/m^2$ at a current density of $20\;mA/cm^2$. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.