• Title/Summary/Keyword: Channel tunnel

Search Result 141, Processing Time 0.032 seconds

The characteristics of source/drain structure for MOS typed device using Schottky barrier junction (Schottky 장벽 접합을 이용한 MOS형 소자의 소오스/드레인 구조의 특성)

  • 유장열
    • Journal of the Korean Institute of Telematics and Electronics T
    • /
    • v.35T no.1
    • /
    • pp.7-13
    • /
    • 1998
  • The VLSI devices of submicron level trend to have a lowering of reliability because of hot carriers by two dimensional influences which are caused by short channel effects and which are not generated in a long channel devices. In order to minimize the two dimensional influences, much research has been made into various types of source/drain structures. MOS typed tunnel transistor with Schottky barrier junctions at source/drain, which has the advantages in fabrication process, downsizing and response speed, has been proposed. The experimental device was fabricated with p type silicon, and manifested the transistor action, showing the unsaturated output characteristics and the high transconductance comparing with that in field effect mode. The results of trial indicate for better performance as follows; high doped channel layer to lower the driving voltage, high resistivity substrate to reduce the leakage current from the substrate to drain.

  • PDF

Recent Progress in Air-Conditioning and Refrigeration Research : A Review of Papers Published in the Korean Journal of Air-Conditioning and Refrigeration Engineering in 2010 (설비공학 분야의 최근 연구 동향 : 2010년 학회지 논문에 대한 종합적 고찰)

  • Han, Hwa-Taik;Lee, Dae-Young;Kim, Seo-Young;Choi, Jong-Min;Kim, Su-Min;Kwon, Young-Chul;Baik, Yong-Kyu
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
    • /
    • v.23 no.6
    • /
    • pp.449-469
    • /
    • 2011
  • This article reviews the papers published in the Korean Journal of Air-Conditioning and Refrigerating Engineering during 2010. It is intended to understand the status of current research in the areas of heating, cooling, ventilation, sanitation, and indoor environments of buildings and plant facilities. Conclusions are as follows. (1) Research trends of thermal and fluid engineering have been surveyed as groups of general thermal and fluid flow, fluid machinery, and new and renewable energy. Various topics were presented in the field of general thermal and fluid flow. Research issues mainly focused on the thermal reliability of axial fan and compressor in the field of fluid machinery. Studies on the design of ground source heat pump systems and solar chemical reactors were executed in the field of new and renewable energy. (2) Research works on heat transfer area have been reviewed in the categories of heat transfer characteristics and industrial heat exchangers. Researches on heat transfer characteristics included heat transfer in thermoelectric cooling/power generation systems, combined heat and power systems, carbon nano fluid with PVP, channel filled with metal foam and smoke ventilation in a rescue station of a railroad tunnel. Also the studies on flow boiling of R123/oil mixture in a plain tube bundle and R410A charge amount in an air cooled mini-channel condenser were reported. In the area of industrial heat exchangers, researches on plate heat exchanger, shell and tube heat exchanger, enthalpy exchanger, micro channel PCHE were performed. (2) Research works on heat transfer area have been reviewed in the categories of heat transfer characteristics and industrial heat exchangers. Researches on heat transfer characteristics included heat transfer in thermoelectric cooling/power generation systems, combined heat and power systems, carbon nano fluid with PVP, channel filled with metal foam and smoke ventilation in a rescue station of a railroad tunnel. Also the studies on flow boiling of R123/oil mixture in a plain tube bundle and R410A charge amount in an air cooled mini-channel condenser were reported. In the area of industrial heat exchangers, researches on plate heat exchanger, shell and tube heat exchanger, enthalpy exchanger, micro channel PCHE were performed. (3) Refrigeration systems with alternative refrigerants such as hydrocarbons, mixed refrigerants, and CO2 were studied. Performance improvement of refrigeration systems are tried applying various ideas of refrigerant subcooling, dual evaporator with hot gas bypass control and feedforward control. The hybrid solar systems combining the solar collection devices with absorption chillers or compression heat pumps are simulated and studied experimentally as well to improve the understanding and the feasibility for actual applications. (4) Research trend in the field of mechanical building facilities has been found to be mainly focused on field applications rather than performance improvements. Various studies on heating and cooling systems, HVAC facilities, indoor air environments and energy resources were carried to improve the maintenance and management of building service equipments. In the field of heating and cooling systems, papers on a transformer cooling system, a combined heat and power, a slab thermal storage and a heat pump were reported. In the field of HVAC facilities, papers on a cooling load, an ondol and a drying were presented. Also, studies on HVAC systems using unutilized indoor air environments and energy resources such as air curtains, bioviolence, cleanrooms, ventilation, district heating, landfill gas were studied. (5) In the field of architectural environment and energy, studies of various purposes were conducted such as indoor environment, building energy, renewable energy and green building. In particular, renewable energy and building energy-related researches have mainly been studied reflecting the global interest. In addition, many researches which related the domestic green building certification of school building were performed to improve the indoor environment of school.

High Resolution for Shallow Seismic Reflection (Applied to the Underground Cavity) (천부층 지진파 반사에 대한 해상도 (지하 공동에 응용))

  • 김소구
    • The Journal of Engineering Geology
    • /
    • v.3 no.2
    • /
    • pp.167-176
    • /
    • 1993
  • The high resolution studies for shallow seismic reflection are carried out using 24-channel seismograph and the high sensitivity geophone(50-500Hz). In order to study the underground structures such as small faults, fractures, cracks and cavities, it is of great importance to enhance high resolution of the seisrnic records for the targets vertically and laterally. In analysis of high resolution seismic reflection, Nyquist frequency($F_N$) should be lager than the highest frequency in the records and the highest wave number should not be exceed the Nyquist wave number($1/2{\Delta}x$). The highest frequency above the Nyquist will be removed using low pass filter or antialias filter. The trace interval Ax should be taken into account so that the highest wave number(f/v) can be less than $1/2{\Delta}x$. The Fraunhofer diffraction of a hyperbola seismic section above the tunnel appeares on the common offset method, and little first arrivals of direct wave on the single-end shooting, delayed strong impulsive reflections are also shown above the tunnel. Ray Method(Cherveney and Psencik, 1983) also represents the same results that the reflected waves from the tunnel are delayed and single impulsive with little first arrivals, while transrnitted waves through the tunnel are delayed with low frequency.

  • PDF

Study on Point and Line Tunneling in Si, Ge, and Si-Ge Hetero Tunnel Field-Effect Transistor (Si, Ge과 Si-Ge Hetero 터널 트랜지스터의 라인 터널링과 포인트 터널링에 대한 연구)

  • Lee, Ju-chan;Ann, TaeJun;Sim, Un-sung;Yu, YunSeop
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.21 no.5
    • /
    • pp.876-884
    • /
    • 2017
  • The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

An Acoustic Event Detection Method in Tunnels Using Non-negative Tensor Factorization and Hidden Markov Model (비음수 텐서 분해와 은닉 마코프 모델을 이용한 터널 환경에서의 음향 사고 검지 방법)

  • Kim, Nam Kyun;Jeon, Kwang Myung;Kim, Hong Kook
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
    • /
    • v.8 no.9
    • /
    • pp.265-273
    • /
    • 2018
  • In this paper, we propose an acoustic event detection method in tunnels using non-negative tensor factorization (NTF) and hidden Markov model (HMM) applied to multi-channel audio signals. Incidents in tunnel are inherent to the system and occur unavoidably with known probability. Incidents can easily happen minor accidents and extend right through to major disaster. Most incident detection systems deploy visual incident detection (VID) systems that often cause false alarms due to various constraints such as night obstacles and a limit of viewing angle. To this end, the proposed method first tries to separate and detect every acoustic event, which is assumed to be an in-tunnel incident, from noisy acoustic signals by using an NTF technique. Then, maximum likelihood estimation using Gaussian mixture model (GMM)-HMMs is carried out to verify whether or not each detected event is an actual incident. Performance evaluation shows that the proposed method operates in real time and achieves high detection accuracy under simulated tunnel conditions.

Implementation of OFDM Transceiver for Multiple Access at 18GHz (18GHz 다중통신을 위한 OFDM송수신 모듈 구현)

  • Jeong, Sang-Guk;An, Tae-Ki;Kim, Back-Hyun;Choi, Gab-Bong;Park, Jong-Chol
    • Proceedings of the KSR Conference
    • /
    • 2011.05a
    • /
    • pp.1155-1160
    • /
    • 2011
  • The importance of broadband wireless communication implemented at subway tunnels is growing up. At 18GHz wireless video transmission system, the transmitter requires a digital modulation method. At subway tunnel, A 18GHz's influence of the multi-pass padding is strong. OFDM digital modulation that is strong for multi-pass padding is recommended. Duplexing methode uses FDD to transmit and receive broadband data at the same time. In the case of FDD we assign a private use channel each with the transmission at the receiving. In this paper, We implement multiple access wireless OFDM transceiver. We verified that one ground transceiver communicates with two car transceiver at the same time.

  • PDF

A Test on Wireless Performance of OFDM Transceiver for Multiple Access at 18GHz (18GHz 다중통신을 위한 OFDM송수신 모듈의 데이터 전송특성 시험)

  • Park, Jong-Cheol;An, Tae-Ki;Kim, Sung-Nam;Lim, Min-Hyuk;Sim, Bo-Seog
    • Proceedings of the KSR Conference
    • /
    • 2011.10a
    • /
    • pp.1008-1013
    • /
    • 2011
  • The importance of broadband wireless communication system at subway tunnels is growing up. At 18GHz wireless video transmission system, the transmitter requires a digital modulation method. At subway tunnel, A 18GHz's influence of the multi-pass padding is strong. OFDM digital modulation that is strong for multi-pass padding is recommended. Duplexing methode uses FDD to transmit and receive broadband data at the same time. In the case of FDD we assign a private use channel each with the transmission at the receiving. In this paper, We implement multiple access wireless OFDM transceiver. We verified that one ground transceiver communicates with two car transceiver at the same time.

  • PDF

ONO ($SiO_2/Si_3N_4/SiO_2$), NON($Si_3N_4/SiO_2/Si_3N_4$)의 터널베리어를 갖는 비휘발성 메모리의 신뢰성 비교

  • Park, Gun-Ho;Lee, Yeong-Hui;Jeong, Hong-Bae;Jo, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.11a
    • /
    • pp.53-53
    • /
    • 2009
  • Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

  • PDF

Flow Analysis around within Sump in a Pump Station using by the CFD (CFD에 의한 펌프장 Sump내 유동해석)

  • Roh, Hyung-Woon;Kim, Jae-Soo;Suh, Sang-Ho
    • 유체기계공업학회:학술대회논문집
    • /
    • 2002.12a
    • /
    • pp.89-94
    • /
    • 2002
  • n general, the function of intake structure, whether it be a open channel, a fully wetted tunnel, a sump or a tank, is to supply an evenly distributed flow to a pump station. An even distribution of flow, characterized by strong local flow, can result in formation of surface or submerged vortices, and with certain low values of submergence, may introduce air into pump, causing a reduction of capacity and efficiency, an increase in vibration and additional noise. Uneven flow distribution can also increase or decrease the power consumption with a change in total developed head. To avoid these sump problems pump station designers are considered intake structure dimensions, such as approaching upstream, baffle size, sump width, width of pump cell and so on. From this background, flow characteristics of intake within sump are investigated numerically to obtain the optimal sump design data. The sump model is designed in accordance with HI code.

  • PDF

A study on the High Integrated 1TC SONOS Flash Memory (고집적화된 1TC SONOS 플래시 메모리에 관한 연구)

  • 김주연;이상배;한태현;안호명;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07a
    • /
    • pp.26-31
    • /
    • 2002
  • To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

  • PDF