• Title/Summary/Keyword: Channel tunnel

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A Study of Interference on Underground Tunnel in Radio Frequency-Communication Based Train Control System (무선 통신기반 열차제어시스템의 지하구간 전파간섭에 대한 연구)

  • Noh, Young-Un;Lee, Jong-Woo
    • Proceedings of the KSR Conference
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    • 2008.11b
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    • pp.1370-1378
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    • 2008
  • In the system necessary for safety such as the train control system, to make train control information be sent correctly is very important. In the case of the system such as RF-CBTC(Radio Frequency-Communication Based Train Control), sometimes failure in correctness of train controlling information may happen because the information is sent throughout wireless transmission between on-board system of a train and wayside transmitter, and then, it is exposed to noises. Of RF-channel interference, there are various forms. Under the environment of mobile telecommunications, adjacent-channel interference and Co-channel interference are in trouble, and under the environment of the wireless LAN, inter-symbol interference is in trouble. Also, the system of the cellular CDMA mobile telecommunication is affected on the RF-channel interference such as Doppler effect, multi-cell interference, and other users' intervention. In this paper, we analyzed the effect of the train control information related to fading, intervention and other noises made in the underground interval and explained the transmission characteristics numerically. Furthermore, we calculated the mean of the error terms by increasing users in the system of the cellular CDMA. As the method for decrease the error term of sent information, we represented the way adjusting the arrangement of antennas, and we did the model related to the system of RF-CBTC in which the location of an antenna is calculated with really measured value of the transmission characteristics and the way confirming reliability of the wireless transmission.

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Experiment on Collection Characteristics of Sub micron Particles in Two-Stage Parallel-Plate Electrostatic Precipitators (2단 평행판 전기집진기의 서브마이크론 입자 포집특성 실험)

  • Oh, M.D.;Yoo, K.H.
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.6 no.3
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    • pp.237-246
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    • 1994
  • Experimental data are reported for charging and collection of NaCl aerosols in the 0.03- to $0.2{\mu}m$-geometric-mean-diameter range in 2-stage parallel-plate electrostatic precipitators. The NaCl aerosols are generated with geometric standard deviation of about 1.74 and particle generation rate of about 10^9 particles/see by the constant output atomizer and injected into the air flow in the clean wind-tunnel. The 2-stage parallel-plate electrostatic precipitator installed in the test section of the wind-tunnel is operated with a positive corona discharge. The NaCl aerosols in the channel flow are sampled and transported to the aerosol particle number concentration measurement system by using the isoaxial sampling and transport system constructed based on the Okazaki and Willeke design. The aerosol particle number concentration measurement system measures the size distribution of submicrometer aerosols by an electrical mobility detection technique. It is confirmed from comparing the measured collection efficiencies in this study and the predicted ones by our previous theoretical analysis that the predicted collection efficiencies agree well with the experimental ones. It is also found from the comparison that below about $0.02{\mu}m$ all particles are not charged and the uncharged particles are not collected, and consequently 2-stage parallel-plate electrostatic precipitators are not suitable for that particle size range.

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Interpretation on the subsurface velocity structure by seismic refraction survey in tunnel and slope (탄성파 굴절법 탐사를 이용한 지반 속도분포 해석-터널 및 절토 사면에의 적용 사례)

  • You Youngjune;Cho Chang Soo;Park Yong Soo;Yoo In Kol
    • 한국지구물리탐사학회:학술대회논문집
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    • 1999.08a
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    • pp.48-64
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    • 1999
  • For quantitative evaluation of geotechnical engineering properties such as rippability and diggability, clear interpretation on the subsurface velocity structures should be preceded by figuring out top soil, weathered and soft rock layers, shape of basement, fracture zones, geologic boundary and etc. from the seismic refraction data. It is very important to set up suitable field parameters, which are the configuration of profile and its length, spacings of geophones and sources and topographic conditions, for increasing field data quality Geophone spacing of 3 to 5m is recommended in the land slope area for house land development and 5 to 10m in the tunnel site. In refraction tomography technique, the number of source points should be more than a half of available channel number of instrument, which can make topographic effect ignorable. Compared with core logging data, it is shown that the velocity range of the soil is less than 700m/s, weathered rock 700${\~}$1,200m/s, soft rock 1,200${\~}$1,800m/s. And the upper limit of P-wave velocity for rippability is estimated 1,200 to 1,800m/s in land slope area of gneiss. In case of tunnel site, it is recommended in tunnel design and construction to consider that tunnel is in contact with soft rock layer where three lineaments intersecting each other are recognized from the results of the other survey.

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Poly-Si MFM (Multi-Functional-Memory) with Channel Recessed Structure

  • Park, Jin-Gwon;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.156-157
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    • 2012
  • 단일 셀에서 비휘발성 및 고속의 휘발성 메모리를 모두 구동할 수 있는 다기능 메모리는 모바일 기기 및 embedded 장치의 폭발적인 성장에 있어 그 중요성이 커지고 있다. 따라서 최근 이러한 fusion기술을 응용한 unified RAM (URAM)과 같은 다기능 메모리의 연구가 주목 받고 있다. 이러한 다목적 메모리는 주로 silicon on insulator (SOI)기반의 1T-DRAM과 SONOS기술 기반의 비휘발성 메모리의 조합으로 이루어진다. 하지만 이런 다기능 메모리는 주로 단결정기반의 SOI wafer 위에서 구현되기 때문에 값이 비싸고 사용범위도 제한되어 있다. 따라서 이러한 다기능메모리를 다결정 실리콘을 이용하여 제작한다면 기판에 자유롭게 메모리 적용이 가능하고 추후 3차원 적층형 소자의 구현도 가능하기 때문에 다결정실리콘 기반의 메모리 구현은 필수적이라고 할 수 있겠다. 본 연구에서는 다결정실리콘을 이용한 channel recessed구조의 다기능메모리를 제작하였으며 각 1T-DRAM 및 NVM동작에 따른 memory 특성을 살펴보았다. 실험에 사용된 기판은 상부 비정질실리콘 100 nm, 매몰산화층 200 nm의 SOI구조의 기판을 이용하였으며 고상결정화 방법을 이용하여 $600^{\circ}C$ 24시간 열처리를 통해 결정화 시켰다. N+ poly Si을 이용하여 source/drain을 제작하였으며 RIE시스템을 이용하여 recessed channel을 형성하였다. 상부 ONO게이트 절연막은 rf sputter를 이용하여 각각 5/10/5 nm 증착하였다. $950^{\circ}C$ N2/O2 분위기에서 30초간 급속열처리를 진행하여 source/drain을 활성화 하였다. 계면상태 개선을 위해 $450^{\circ}C$ 2% H2/N2 분위기에서 30분간 열처리를 진행하였다. 제작된 Poly Si MFM에서 2.3V, 350mV/dec의 문턱전압과 subthreshold swing을 확인할 수 있었다. Nonvolatile memory mode는 FN tunneling, high-speed 1T-DRAM mode에서는 impact ionization을 이용하여 쓰기/소거 작업을 실시하였다. NVM 모드의 경우 약 2V의 memory window를 확보할 수 있었으며 $85^{\circ}C$에서의 retention 측정시에도 10년 후 약 0.9V의 memory window를 확보할 수 있었다. 1T-DRAM 모드의 경우에는 약 $30{\mu}s$의 retention과 $5{\mu}A$의 sensing margin을 확보할 수 있었다. 차후 engineered tunnel barrier기술이나 엑시머레이저를 이용한 결정화 방법을 적용한다면 device의 특성향상을 기대할 수 있을 것이다. 본 논문에서는 다결정실리콘을 이용한 다기능메모리를 제작 및 메모리 특성을 평가하였다. 제작된 소자의 단일 셀 내에서 NVM동작과 1T-DRAM동작이 모두 가능한 것을 확인할 수 있었다. 다결정실리콘의 특성상 단결정 SOI기반의 다기능 메모리에 비해 낮은 특성을 보여주었으나 이는 결정화방법, high-k절연막 적용 및 engineered tunnel barrier를 적용함으로써 해결 가능하다고 생각된다. 또한 sputter를 이용하여 저온증착된 O/N/O layer에서의 P/E특성을 확인함으로써 glass위에서의 MFM구현의 가능성도 확인할 수 있었으며, 차후 system on panel (SOP)적용도 가능할 것이라고 생각된다.

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The Fabrication and Characteristics of p-channel SONOS Charge-Trap Flash Memory (p채널 SONOS 전하트랩 플래시메모리의 제작 및 특성)

  • Kim, Byung-Cheul;Kim, Joo-Yeon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.10a
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    • pp.604-607
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    • 2008
  • In this study, p-channel silicon-oxide-nitride-oxide-silicon (SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are $20{\AA}$ for the tunnel oxide, $14{\AA}$ for the nitride layer, and $49{\AA}$ for the blocking oxide. The fabricated SONGS transistors show low programming voltage, fast erase speed, and relatively good retention and endurance.

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The effects of the circulating water tunnel wall and support struts on hydrodynamic coefficients estimation for autonomous underwater vehicles

  • Huang, Hai;Zhou, Zexing;Li, Hongwei;Zhou, Hao;Xu, Yang
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.12 no.1
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    • pp.1-10
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    • 2020
  • This paper investigates the influence of the Circulating Water Channel (CWC) side wall and support struts on the hydrodynamic coefficient prediction for Autonomous Underwater Vehicles (AUVs) experiments. Computational Fluid Dynamics (CFD) method has been used to model the CWC tests. The hydrodynamic coefficients estimated by CFD are compared with the prediction of experiments to verify the accuracy of simulations. In order to study the effect of side wall on the hydrodynamic characteristics of the AUV in full scale captive model tests, this paper uses the CWC non-dimensional width parameters to quantify the correlation between the CWC width and hydrodynamic coefficients of the chosen model. The result shows that the hydrodynamic coefficients tend to be constant with the CWC width parameters increasing. Moreover, the side wall has a greater effect than the struts.

Numerical investigations on anchor channels under quasi-static and high rate loadings - Case of concrete edge breakout failure

  • Kusum Saini;Akanshu Sharma;Vasant A. Matsagar
    • Computers and Concrete
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    • v.32 no.5
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    • pp.499-511
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    • 2023
  • Anchor channels are commonly used for façade, tunnel, and structural connections. These connections encounter various types of loadings during their service life, including high rate or impact loading. For anchor channels that are placed close and parallel to an edge and loaded in shear perpendicular to and towards the edge, the failure is often governed by concrete edge breakout. This study investigates the transverse shear behavior of the anchor channels under quasi-static and high rate loadings using a numerical approach (3D finite element analysis) utilizing a rate-sensitive microplane model for concrete as constitutive law. Following the validation of the numerical model against a test performed under quasi-static loading, the rate-sensitive static, and rate-sensitive dynamic analyses are performed for various displacement loading rates varying from moderately high to impact. The increment in resistance due to the high loading rate is evaluated using the dynamic increase factor (DIF). Furthermore, it is shown that the failure mode of the anchor channel changes from global concrete edge failure to local concrete crushing due to the activation of structural inertia at high displacement loading rates. The research outcomes could be valuable for application in various types of connection systems where a high rate of loading is expected.

A Study on Poly-Si TFT characteristics with string structure for 3D SONOS NAND Flash Memory Cell (3차원 SONOS 낸드 플래쉬 메모리 셀 적용을 위한 String 형태의 폴리실리콘 박막형 트랜지스터의 특성 연구)

  • Choi, Chae-Hyoung;Choi, Deuk-Sung;Jeong, Seung-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.7-11
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    • 2017
  • In this paper, we have studied the characteristics of NAND Flash memory in SONOS Poly-Si Thin Film Transistor (Poly-Si TFT) device. Source/drain junctions(S/D) of cells were not implanted and selective transistors were located in the end of cells. We found the optimum conditions of process by means of the estimation for the doping concentration of channel and source/drain of selective transistor. As the doping concentration was increased, the channel current was increased and the characteristic of erase was improved. It was believed that the improvement of erase characteristic was probably due to the higher channel potential induced by GIDL current at the abrupt junction. In the condition of process optimum, program windows of threshold voltages were about 2.5V after writing and erasing. In addition, it was obtained that the swing value of poly Si TFT and the reliability by bake were enhanced by increasing process temperature of tunnel oxide.

Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique

  • Kim, Hyun Woo;Kim, Jong Pil;Kim, Sang Wan;Sun, Min-Chul;Kim, Garam;Kim, Jang Hyun;Park, Euyhwan;Kim, Hyungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.572-578
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    • 2014
  • In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

A Study of Ice-Formation Phenomena on Freezing of Flowing Water in a Stenotic Tube

  • Suh, Jeong-Se;Kim, Moo-Geun;Ro, Sung-Tack;Yim, Chang-Soon
    • International Journal of Air-Conditioning and Refrigeration
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    • v.7
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    • pp.1-10
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    • 1999
  • In this study, a numerical analysis is made on the ice-formation for laminar water flow inside a stenotic tube. The study takes into account the interaction between the laminar flow and the stenotic port in the circular tube. The purpose of the present numerical investigation is to assess the effect of a stenotic shape on the instantaneous shape of the flow passage during freezing upstream/downstream of the stenotic channel. In the solution strategy, the present study is substantially distinguished from the existing works in that the complete set of governing equations in both the solid and liquid regions are resolved. In a channel flow between parallel plates, the agreement between the of predictions and the available experimental data is very good. Numerical analyses are performed for parametric variations of the position and heights of stenotic shape and flow rate. The results show that the stenotic shape has the great effect on the thickness of the solidification layer inside the tube. As the height of a stenosis grows and the length of a stenosis decreases, the ice layer thickness near the stenotic port is thinner, due to backward flow caused by the sudden expansion of a water tunnel. It is found that the flow passage has a slight uniform taper up to the stenotic channel, at which a sudden expansion is observed. It is also shown that the ice layer becomes more fat in accordance with its Reynolds number.

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