• Journal of the Korean Society for Precision Engineering
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• v.25 no.1
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• pp.115-121
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• 2008

In this paper, a three-dimensional computational fluid dynamic model of a proton exchange membrane fuel cell(PEMFC) with serpentine flow channel is presented. A steady state, single phase and isothermal numerical model has been established to investigate the influence of the GDL (Gas Diffusion Layer) parameters. The GDL is made of a porous material such as carbon cloth, carbon paper or metal wire mesh. For the simplicity, the GDL is modeled as a block of material having numerous pathways through which gaseous reactants and liquid water can pass. The porosity, permeability and thickness of the GDL, which are employed in the model parameters significantly affect the PEMFC performance at the high current region.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.354-358
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• 2004

In this thesis, an analytical model for Ⅰ-Ⅴ characteristics of an n-AlGaAs/GaAs Delta doped HEMT is proposed. 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. Parameters, e.g., the saturation velocity, 2-dimensional electron gas concentration, thickness of the doped and undoped layer(AlGaAs, GaAs, spacer etc.,) are in good agreement with the independent calculations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.372-377
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• 2003

To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Journal of the Korea institute for structural maintenance and inspection
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• v.2 no.4
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• pp.148-158
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• 1998

Determining the thickness if concrete lining and detecting of the cavity where is located behind tunnel lining plays an important role in the safety diagnosis of tunnel structure and the quality control. In this study, we made use of GPR and seismic method in order to find the cavity or flaw. Although GPR is very useful method in the concrete lining without rebar, it is difficult to detect the cavity in the reinforced concrete lining. We applied mini-seismic method to the reinforced concrete lining. The obtained seismic data was processed by means of seismic section in time domain and image section of power spectrum in frequency domain using Impact-Echo method as well. The proposed method can accurately show the location and depth of the cavity in the reinforced concrete lining.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.277-279
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• 2016

Nanowire-FET은 Gate-All-Around (GAA) 구조로 차세대 반도체 소자 구조로 여겨지고 있다. Nanowire-FET은 채널 두께에 따라 $I_D-V_G$ curve에 매우 중요한 영향을 끼친다. 따라서 본 논문은, Edison 시뮬레이션을 이용하여 Nanowire-FET의 Silicon Thickness에 따른 여러 특성을 비교하여 최적 Silicon Thickness에 대해 연구하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.491-495
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• 2017

We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.158-161
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• 2004

In this study, an analytical model for I-V characteristics of an n-AIGaAs / GaAs Delta doped HEMT is proposed. The two-dimensional electron gas density and the conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. The parameters, which include the saturation velocity, two-dimensional electron gas concentration, thickness of the doped and undoped layer(AIGaAs, GaAs, spacer etc.,), are in good agreement with the independent calculations.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1250-1252
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• 1993

Enhancement mode n-channel TFT leakage current(off current : $V_G<0$) that is little agreement on the conduction mechanism is major disadvantage of poly-silicon TFT in practical use, characteristic analysis and model ing. In this paper, new modeling of leakage current is proposed. The activation energy of leakage current, which is dependent on gate voltage, and leakage current dependent on poly silicon thickness are plausibly explained with this model. This model indicate that the reduction of leakage current is attributable to a decrease of maximum laterial electric field strength in the drain depletion region and to the density of trap.

• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.1356-1358
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• 2003

In the paper, a method making use of the characteristics of Dyad Green Function (DGF) and Fluctuation-Dissipation Theorem to get the brightness temperature of layered medium is introduced. Based on the approach and the measured data of multi-channel radiometer and Least Square Method (LSM), the thickness of lunar soil can be retrieved. These methods are significant to study on materials on lunar surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.227-228
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• 2012

In interfaces between carbon black or Pt and FTO glass in dye-sensitized solar cell counter electrodes, a marginal resistant channel for electrons, we tried to improve the connection by modifying the sintering process. A stepwise sintering process for carbon black and Pt counter electrodes was applied and its effect on power conversion efficiency was studied. Power conversion efficiencies of built-in DSSC made by a one-step sintering process with carbon black and Pt counter electrodes were about 5.01% and 5.02%, respectively. Cells made with the stepwise sintering process were 5.96% and 6.21%, respectively, indicating an 20% improvement. Fill factor (FF) increased, and it was them main reason for the power conversion efficiency improvement. Step wise sintering increased the adhesion of the interface and reduced the film thickness and surface roughness. As a result, the resistivity of the counter electrode and EIS impedance of DSSCs decreased.