• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.5
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• pp.31-37
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• 2009

In the two-way relay channel, the relay employ Amplify-and-Forward (AF) or Decode-and-Forward (DF) protocol, and broadcast the network-coded signal to both user. In the system, DF protocol provides maximum throughput at low signal to noise ratio(SNR). On the other hand, at high SNR, AF protocol provides maximum throughput. The paper propose active transmission scheme which employ Amplify-and-Forward or Decode-and-Forward protocol based on received SNR at the relay over Two-way relay channel. The optimal threshold is investigated numerically for switching the protocol. Through numerical results, we confirm that the proposed scheme outperforms conventional schemes over two-way relay channel.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.69-76
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• 1995

A new device structure has been developed for p-i-n switches. In this structure, the phosphorus-diffused n$^{+}$ layter adjacent to the boron-doped anode is used to short the p$^{+}$ anode-channel(i-region). This change in the anode electrode structure results in a significant improvement in the threshold voltage-to-holding voltage($V_{Th}/V_{h}$) ratio, which is due to the suppression of the hold injection from the anode by the n$^{+}$ layer. The shorted anode p-i-n devices of a 100 .mu.m channel length show an extremely high threshold voltage in the 250~300 V range and a low holding voltage in the 5~9 V range. These features of the device are expected to acdelerate their practical application to power switching circuits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1463-1469
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• 2012

This paper has presented the influence of scaling theory on short channel effects of double gate(DG) MOSFET in subthreshold region. In the case of conventional MOSFET, to preserve constantly output characteristics,current and switching frequency have been analyzed based on scaling theory. To analyze the results of application of scaling theory for short channel effects of DGMOSFET, the changes of threshold voltage, drain induced barrier height and subthreshold swing have been observed according to scaling factor. The analytical potential distribution of Poisson equation already verified has been used. As a result, it has been observed that threshold voltage among short channel effects is grealty changed according to scaling factor. The best scaling theory for DGMOSFET has been explained as using modified scaling theory, applying weighting factor reflected the influence of two gates when scaling theory has been applied for channel length.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.5
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• pp.2009-2028
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• 2018

Considering a dual-hop energy-harvesting (EH) relaying system, this paper advocates novel relaying protocols based on adaptive time power switching-based relaying (AR) architecture for amplify-and-forward (AF) mode. We introduce novel system model relaying network with impacts of co-channel interference (CCI) and derive analytical expressions for the average harvested energy, outage probability, and the optimal throughput of the information transmission link, taking into account the effect of CCI from neighbor cellular users. In particular, we consider such neighbor users procedure CCI both on the relay and destination nodes. Theoretical results show that, in comparison with the conventional solutions, the proposed model can achieve optimal throughput efficiency for sufficiently small threshold SNR with condition of reasonable controlling time switching fractions and power splitting fractions in concerned AR protocol. We also explore impacts of transmission distances in each hop, transmission rate, the other key parameters of AR to throughput performance for different channel models. Simulation results are presented to corroborate the proposed methodology.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.7
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• pp.3747-3765
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• 2017

Existing authentication mechanisms in cellular mobile communication networks are realized in the upper layer by employing cryptographic techniques. Authentication data are broadcasted over the air in plaintext, enabling attackers to completely eavesdrop on the authentication and get some information about the shared secret key between legitimate nodes. Therefore, reusing the same secret key to authenticate several times results in the secret key's information leakage and high attacking rate. In this paper, we consider the most representative authentication mechanism, Authentication and Key Agreement (AKA), in cellular communication networks and propose an enhanced AKA scheme based on Physical Layer Authentication (AKA-PLA). Authentication responses generated by AKA are no longer transmitted in plaintext but masked by wireless channel characteristics, which are not available to adversaries, to generate physical layer authentication responses by a fault-tolerant hash method. The authenticator sets the threshold according to the authentication requirement and channel condition, further verifies the identity of the requester based on the matching result of the physical layer authentication responses. The performance analyses show that the proposed scheme can achieve lower false alarm rate and missing rate, which are a pair of contradictions, than traditional AKA. Besides, it is well compatible with AKA.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.647-654
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• 2013

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.2
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• pp.207-212
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• 2013

A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.5
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• pp.509-515
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• 2010

Such as disaster rescue in deep water, undersea exploration and monitering for environmental pollution, many applications require the acoustic communication for high data rate over underwater acoustic channel. As underwater channel is very complex and is time-varying, conventional single carrier communication has good performance. In this paper, An adaptive OFDM system is analyzed for high data rate and reliability and rubust service over UWA channels. Through the adaptive system, we show threshold switching for an adaptive algorithm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.