• International Journal of Automotive Technology
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• v.8 no.6
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• pp.761-769
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• 2007

The configuration of the flow channel on a bipolar plate of a proton exchange membrane fuel cell(PEMFC) for efficient reactant supply has great influence on the performance of the fuel cell. Recent demand for higher energy density fuel cells requires an increase in current density at mid voltage range and a decrease in concentration overvoltage at high current density. Therefore, an interdigitated flow channel where mass transfer rate by convection through a gas diffusion layer is greater than the mass transfer by a diffusion mechanism through a gas diffusion layer was recently proposed. This study attempts to analyze the i-V performance, mass transfer and pressure drop in interdigitated flow channels by developing a fully three dimensional simulation model for PEMFC that can deal with anode and cathode flow together. The results indicate that the trade off between performance and pressure loss should be considered for efficient design of flow channels. Although the performance of the fuel cell with interdigitated flow is better than that with conventional flow channels due to a strong mass transfer rate by convection across a gas diffusion layer, there is also an increase in friction due to the strong convection through the porous diffusion layer accompanied by a larger pressure drop along the flow channel. It was evident that the proper selection of the ratio of channel and rib width under counter flow conditions in the fuel cell with interdigitated flow are necessary to optimize the interdigitated flow field design.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of Korea Society of Digital Industry and Information Management
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• v.18 no.4
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• pp.13-21
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• 2022

Recently, in wireless video sensor networks(WVSN), various schemes for efficient video data transmission have been studied. In this paper, a layer based cooperative relaying(LCR) algorithm is proposed for minimizing scalable video transmission distortion from packet loss in WVSN. The proposed LCR algorithm consists of two modules. In the first step, a parameter based error propagation metric is proposed to predict the effect of each scalable layer on video quality degradation at low complexity. In the second step, a layer-based cooperative relay algorithm is proposed to minimize distortion due to packet loss using the proposed error propagation metric and channel information of the video sensor node and relay node. In the experiment, the proposed algorithm showed that the improvement of peak signal-to-noise ratio (PSNR) in various channel environments, compared to the previous algorithm(Energy based Cooperative Relaying, ECR) without considering the metric of error propagation.The proposed LCR algorithm minimizes video quality degradation from packet loss using both the channel information of relaying node and the amount of layer based error propagation in scalable video.

• Journal of Korea Multimedia Society
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• v.10 no.12
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• pp.1632-1644
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• 2007

Wireless Mesh Networks aim to attain large connectivity with minimum performance degradation, as network size is increase. As such, scalability is one of the main characteristics of Wireless Mesh Networks that differentiates it from other wireless networks. This characteristic creates the need for bandwidth efficiency strategies to ensure that network performance does not degrade as the size of the network increase. Several researches have been done to realize mesh networks. However, the researches conducted were mostly focused on a per TCP/IP layer basis. Also, the studies on bandwidth efficiency and bandwidth improvement are usually dealt with as separate issues. This paper aims to simultaneously study bandwidth efficiency and improvement. Aside from optimizing the bandwidth given a fixed capacity, the capacity is also increased using results of physical layer studies. In this paper, the capacity is improved by using the concept of non-overlapping channels for wireless communication. A channel allocation scheme is conceptualized to choose the transmission channel that would optimize the network performance parameters with consideration of chosen Quality of Service (QoS) parameters. Network utility maximization is used to optimize the bandwidth after channel selection. Furthermore, a routing scheme is proposed using the results of the network utilization method and the channel allocation scheme to find the optimal path that would maximize the network gain.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.21-25
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

• ETRI Journal
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• v.30 no.5
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• pp.663-673
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• 2008

The multi-scenario topology of multi-channel hybrid ubiquitous sensor networks (USNs) is studied and a novel link auto-diversity cross-layer cooperative scheduling scheme is proposed in this paper. The proposed scheme integrates the attributes of the new performance evaluation link auto-diversity air-time metric and the topology space in the given multi-scenario. The proposed scheme is compared with other schemes, and its superiority is demonstrated through simulations. The simulation results show that relative energy consumption, link reception probability, and end-to-end blocking probability are improved. The addressing ratio of success with unchanged parameters and external information can be increased. The network can tolerate more hops to support reliable transportation when the proposed scheme is implemented. Moreover, the scheme can make the network stable. Therefore, the proposed scheme can enhance the average rate performance of the hybrid USN and stabilize the outage probability.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.539-542
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• 2011

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.