한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.695-698
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- 2006
The Photosensitive Insulating Materials as a Passivation Layer on a-Si TFT LCDs
- Lee, Liu-Chung (AUO Technology Center, AU Opronics) ;
- Liang, Chung-Yu (AUO Technology Center, AU Opronics) ;
- Pan, Hsin-Hua (AUO Technology Center, AU Opronics) ;
- Huang, G.Y. (AUO Technology Center, AU Opronics) ;
- Gan, Feng-Yuan (AUO Technology Center, AU Opronics)
- Published : 2006.08.22
Abstract
The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.
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