• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.48-52
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• 1998

We fabricated the newly proposed nano structure memory with SOI edge channel and a nano dot. The width of the edge channel of this device, which uses the side wall as a channel and has a nano dot on this channel region, was determined by the thickness of the recessed top-silicon layer of SOI wafer. The size of side-wall nano dot was determined by the RIE etch and E-Beam lithography. The I$_{d}$-V$_{d}$, I$_{d}$-V$_{g}$ characteristics of the devices without nano dots and memory characteristics of the devices with nano dots were obtained, where the voltage scan was done between -20 V and 14 V and the threshold voltage shift was about 1 V.t 1 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Journal of the Korean Society of Industry Convergence
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• v.21 no.4
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• pp.175-181
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• 2018

Stamping process and rubber pad forming process were performed to manufacture the bipolar plate for fuel cells. For that, a vacuum die casting process and a semi-solid forming process wherein liquid-state materials were used were adopted. After preparing the blank with the stainless steel thin plate having a thickness of 0.1 mm, the bipolar plate channel was formed with the stamping process and rubber pad forming process. The depth of the bipolar plate channel prepared by the stamping method was 0.45 mm and the depth of the bipolar plate channel prepared by the rubber pad forming process was 0.41 mm. Meanwhile, with the vacuum die casting and semi solid forming, the bipolar plate having a channel depth of 0.3 mm, same as the size of the die, could be formed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.5
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• pp.491-498
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• 2007

Flame characteristics of a methane-air premixed flame stabilized in a heat-regenerative small combustor were investigated experimentally. A small combustor having two counter-current shallow channels and a combustion space at one side was developed. In which the channel-gap was less the ordinary quenching distance of a stoichiometric methane-air premixed flame. Two design parameters of channel gap and thickness of the middle wall, which is located between two channels for unburned and burned gases, were varied. Flame stabilization conditions and characteristic flame behaviors were experimentally examined. Conclusively, Blowout conditions were governed mostly by the scale of the combustion space, and flashback conditions into the channel are dominated by the channel gap. Surface temperatures of the combustor were between 100 to 500$^{\circ}C$. Additionally, two distinctive flame stabilization modes of radiation and well-stirred?reaction were observed and their applicability was discussed.

• The Korean Journal of Physiology and Pharmacology
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• v.11 no.5
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• pp.215-219
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• 2007

Small and large conductance $Ca^{2+}$-activated $K^+(SK_{Ca}\;and\;BK_{Ca})$ channels are implicated in the modulation of neuronal excitability. We investigated how changes in peripheral $K_{Ca}$ channel activity affect mechanical sensitivity as well as the afferent fiber type responsible for $K_{Ca}$ channel-induced mechanical sensitivity. Blockade of $SK_{Ca}$ and $BK_{Ca}$ channels induced a sustained decrease of mechanical threshold which was significantly attenuated by topical application of capsaicin onto afferent fiber and intraplantar injection of 1-ethyl-2-benzimidazolinone. NS1619 selectively attenuated the decrease of mechanical threshold induced by charybdotoxin, but not by apamin. Spontaneous flinching and paw thickness were not significantly different after $K_{Ca}$ channel blockade. These results suggest that mechanical sensitivity can be modulated by $K_{Ca}$ channels on capsaicin-sensitive afferent fibers.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.537-540
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• 1998

A MESFET device with double $\delta-doped$ channel is designed and investigated by computer simulation. The device with optimized design parameters such as a doping ratio and a spacer thickness, shows superior performance to conventional MESFETs. The effects of the FWHM of $\delta-doped$ layers device characteristics are investigated to account for the thermal process

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.478-485
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• 1987

Optimization of the sub-micron N-channel MOSFET with the LDD(Lightly Doped Drain)structure has been investigated. LDD devices with various length of n-region, n-dose and n-implantation species were fabricated for this purpose. It will be shown that LDD devices have lower substrate current by an order of magnitude and higher breakdown voltage than the conventional devices with comparable channel length. Optimized LDD structure has been found when the sidewall thickness is 2500\ulcorner and n-region is phosphorus implantd with the dose of 1.0E13/cm\ulcorner It has been found that transconductance degradation is less than 20%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.713-716
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• 2013

The device performances of N-channel Tunneling FET have been characterized with different intrinsic length between drain and gate($L_{in}$), drain and source doping, permittivity and oxide thickness when the total effective channel length is constant. N-channel Tunneling FET of SOI structure have been used in characterization. $L_{in}$ was from 30nm to 70nm, dose concentration of drain and source were from $2{\times}10^{12}cm^{-2}$ to $2{\times}10^{15}cm^{-2}$ and from $1{\times}10^{14}cm^{-2}$ to $3{\times}10^{15}cm^{-2}$, permittivity was from 3.9 to 29, and oxide thickness was from 3nm to 9nm. The device performances were characterized by Subthreshold slope(S-slope), On/off ratio, and leakage current. From the simulation results, the leakage current have been reduced for long $L_{in}$ and low drain doping. S-slope have been reduced for high source doping, high permittivity and thin oxide thickness. With considering the leakage current and S-slope, it is desirable that are long $L_{in}$, low drain doping, high source doping, high permittivity and thin oxide thickness to optimize device performance in n-channel Tunneling FET.

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.6
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• pp.739-746
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• 1999

The spectral aerosol optical thickness of vertical air columns were measured by a ground-based multi-channel sunphotometer at the BAPMoN station(36$^{\circ}$31'N, 126$^{\circ}$19'E) in Anmyon Island, Korea, from 1 March 1998 to 31 May 1998. We used the data of three yellow sand and two clear sky days in order to analyze the temporal variations in aerosol optical thickness at the station. The basic aerosol optical thickness generally represented smaller than 0.3 in a clear sky and the range 0.5 to 1.1 in yellow sand. Especially the aerosol optical thickness represented larger than 0.9 in a heavy yellow sand. It was found that the aerosol optical thickness of yellow sand was highly increased in comparison with the case of a clear sky andparticles larger than 0.5$mu extrm{m}$ were also increased in the spectral distribution of aerosol volume during yellow sand. Consequently the spectral variations in tropospheric aerosol caused by yellow sand were determined by the number concentration of particles larger than 0.5${\mu}{\textrm}{m}$ and the magnitude of yellow sand.